Patents by Inventor Harald F. Okorn-Schmidt
Harald F. Okorn-Schmidt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6958506Abstract: Methods of forming front-end-of the line (FEOL) capacitors such as polysilicon-polysilicon capacitors and metal-insulator-silicon capacitors are provided that are capable of incorporating a high-dielectric constant (k of greater than about 8) into the capacitor structure. The inventive methods provide high capacitance/area devices with low series resistance of the top and bottom electrodes for high frequency responses. The inventive methods provide a significant reduction in chip size, especially in analog and mixed-signal applications where large areas of capacitance are used.Type: GrantFiled: October 17, 2003Date of Patent: October 25, 2005Assignee: International Business Machines CorporationInventors: Evgeni P. Gousev, Harald F. Okorn-Schmidt, Arne W. Ballantine, Douglas A. Buchanan, Eduard A. Cartier, Douglas D. Coolbaugh
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Publication number: 20040087100Abstract: Methods of forming front-end-of the line (FEOL) capacitors such as polysilicon-polysilicon capacitors and metal-insulator-silicon capacitors are provided that are capable of incorporating a high-dielectric constant (k of greater than about 8) into the capacitor structure. The inventive methods provide high capacitance/area devices with low series resistance of the top and bottom electrodes for high frequency responses. The inventive methods provide a significant reduction in chip size, especially in analog and mixed-signal applications where large areas of capacitance are used.Type: ApplicationFiled: October 17, 2003Publication date: May 6, 2004Inventors: Evgeni P. Gousev, Harald F. Okorn-Schmidt, Arne W. Ballantine, Douglas A. Buchanan, Eduard A. Cartier, Douglas D. Coolbaugh
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Patent number: 6667207Abstract: Methods of forming front-end-of the line (FEOL) capacitors such as polysilicon-polysilicon capacitors and metal-insulator-silicon capacitors are provided that are capable of incorporating a high-dielectric constant (k of greater than about 8) into the capacitor structure. The inventive methods provide high capacitance/area devices with low series resistance of the top and bottom electrodes for high frequency responses. The inventive methods provide a significant reduction in chip size, especially in analog and mixed-signal applications where large areas of capacitance are used.Type: GrantFiled: September 18, 2002Date of Patent: December 23, 2003Assignee: International Business Machines CorporationInventors: Arne W. Ballantine, Douglas A. Buchanan, Eduard A. Cartier, Douglas D. Coolbaugh, Evgeni P. Gousev, Harald F. Okorn-Schmidt
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Patent number: 6511873Abstract: Methods of forming front-end-of the line (FEOL) capacitors such as polysilicon-polysilicon capacitors and metal-insulator-silicon capacitors are provided that are capable of incorporating a high-dielectric constant (k of greater than about 8) into the capacitor structure. The inventive methods provide high capacitance/area devices with low series resistance of the top and bottom electrodes for high frequency responses. The inventive methods provide a significant reduction in chip size, especially in analog and mixed-signal applications where large areas of capacitance are used.Type: GrantFiled: June 15, 2001Date of Patent: January 28, 2003Assignee: International Business Machines CorporationInventors: Arne W. Ballantine, Douglas A. Buchanan, Eduard A. Cartier, Douglas D. Coolbaugh, Evgeni P. Gousev, Harald F. Okorn-Schmidt
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Publication number: 20030017639Abstract: Methods of forming front-end-of the line (FEOL) capacitors such as polysilicon-polysilicon capacitors and metal-insulator-silicon capacitors are provided that are capable of incorporating a high-dielectric constant (k of greater than about 8) into the capacitor structure. The inventive methods provide high capacitance/area devices with low series resistance of the top and bottom electrodes for high frequency Responses. The inventive methods provide a significant reduction in chip size, especially in analog and mixed-signal applications where large areas of capacitance are used.Type: ApplicationFiled: September 18, 2002Publication date: January 23, 2003Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Arne W. Ballantine, Douglas A. Buchanan, Eduard A. Cartier, Douglas D. Coolbaugh, Evgeni P. Gousev, Harald F. Okorn-Schmidt
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Publication number: 20020197836Abstract: A method for forming variable oxide thicknesses across semiconductor chips comprises providing a silicon semiconductor substrate having pre-selected areas open to silicon surface using a photoresist layer; immersing the silicon semiconductor substrate in an HF type electrolytic bath to produce a porous silicon area; and removing the photoresist layer and oxidizing the silicon semiconductor substrate to produce a plurality of thicknesses of gate oxide on the silicon semiconductor substrate.Type: ApplicationFiled: June 11, 2001Publication date: December 26, 2002Applicant: International Business Machines CorporationInventors: S. Sundar Kumar Iyer, Suryanarayan G. Hegde, Erin Catherine Jones, Harald F. Okorn-Schmidt
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Publication number: 20020192881Abstract: Methods of forming front-end-of the line (FEOL) capacitors such as polysilicon-polysilicon capacitors and metal-insulator-silicon capacitors are provided that are capable of incorporating a high-dielectric constant (k of greater than about 8) into the capacitor structure. The inventive methods provide high capacitance/area devices with low series resistance of the top and bottom electrodes for high frequency responses. The inventive methods provide a significant reduction in chip size, especially in analog and mixed-signal applications where large areas of capacitance are used.Type: ApplicationFiled: June 15, 2001Publication date: December 19, 2002Applicant: INTERNATIONAL BUSINESS MACHINES COPORATIONInventors: Arne W. Ballantine, Douglas A. Buchanan, Eduard A. Cartier, Douglas D. Coolbaugh, Evgeni P. Gousev, Harald F. Okorn-Schmidt
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Patent number: 6444592Abstract: A method for integrating a high-k material into CMOS processing schemes is provided. The method includes forming an interfacial oxide, oxynitride and/or nitride layer on a device region of a semiconductor substrate, said interfacial layer having a thickness of less than 10 Å; and (b) forming a high-k dielectric material on said interfacial oxide, oxynitride and/or, nitride layer, said high-k dielectric having a dielectric constant, k, of greater than 8.Type: GrantFiled: June 20, 2000Date of Patent: September 3, 2002Assignee: International Business Machines CorporationInventors: Arne W. Ballantine, Douglas A. Buchanan, Eduard A. Cartier, Kevin K. Chan, Matthew W. Copel, Christopher P. D'Emic, Evgeni P. Gousev, Fenton Read McFeely, Joseph S. Newbury, Harald F. Okorn-Schmidt, Patrick R. Varekamp, Theodore H. Zabel
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Patent number: 6354309Abstract: Semiconductor substrates are contacted with a deionized water solution containing an acidic material.Type: GrantFiled: September 29, 2000Date of Patent: March 12, 2002Assignee: International Business Machines CorporationInventors: Russell H. Arndt, Glenn Walton Gale, Frederick William Kern, Jr., Karen P. Madden, Harald F. Okorn-Schmidt, George Francis Ouimet, Jr., Dario Salgado, Ryan Wayne Wuthrich
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Patent number: 6276370Abstract: An array of ultrasonic or megasonic transducers is used to clean a substrate. An interference signal that is the superposition of the signals from each transducer enhances the cleaning. The system improves cleaning by providing a higher intensity beam than is available from uncoupled transducers to facilitate removal of smaller particles. In addition, the beam can be swept across the substrate to provide a uniform cleaning of the entire surface, avoiding dead spots. The system can be adapted for use in a vessel or for single wafer processing with a stream of fluid or a puddle of fluid.Type: GrantFiled: June 30, 1999Date of Patent: August 21, 2001Assignee: International Business Machines CorporationInventors: Emily E. Fisch, Glenn W. Gale, Harald F. Okorn-Schmidt, William A. Syverson
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Patent number: 6254796Abstract: A silicate glass is selectively etched employing a composition containing a fluoride containing compound and certain organic solvents. Preferred compositions also include water.Type: GrantFiled: December 29, 1998Date of Patent: July 3, 2001Assignee: International Business Machines CorporationInventors: David L. Rath, Glenn W. Gale, Rangarajan Jagannathan, Kenneth J. McCullough, Karen P. Madden, Harald F. Okorn-Schmidt, Keith R. Pope
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Patent number: 6200891Abstract: Oxides such as those commonly used in interlevel dielectrics may be removed employing a liquid composition containing a fluoride-containing compound and an organic solvent. Preferred compositions are substantially nonaqueous and include an anhydride. Improved methods for selective removal of oxides, especially for removal of silicon oxides where pre-exposed (or conductive metal - containing) features are present, where metal (conductive metal - contaimg) features are to be exposed by the desired oxide removal, or where the silcon oxide otherwise contacts metal (or conductive metal - containing) features are provided.Type: GrantFiled: August 13, 1998Date of Patent: March 13, 2001Assignee: International Business Machines CorporationInventors: Rangarajan Jagannathan, Karen P. Madden, Kenneth J. McCullough, Harald F. Okorn-Schmidt, Keith R. Pope, David L. Rath
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Patent number: 6191085Abstract: A method is provided for treating a plurality of semiconductor substrates using the same aqueous SC-1 solution which solution removes and/or inhibits contamination of the semiconductor surfaces by metallic ions present in the solution or on the substrate surface comprising a basic solution containing hydrogen peroxide and an oxidation-resistant chelating additive such as CDTA in an amount effective to provide the desired treatment results. The SC-1 solution may be the conventional 5:1:1 (water:NH4OH:H2O2) solution or a dilute solution such as a 5:x:1 to 200:x:l solution wherein x is 0.025 to 2.Type: GrantFiled: May 10, 1999Date of Patent: February 20, 2001Assignee: International Business Machines CorporationInventors: Emanuel I. Cooper, Scott A. Estes, Glenn W. Gale, Rangarajan Jagannathan, Harald F. Okorn-Schmidt, David L. Rath
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Patent number: 6173720Abstract: Semiconductor substrates are contacted with a deionized water solution containing an acidic material.Type: GrantFiled: December 2, 1998Date of Patent: January 16, 2001Assignee: International Business Machines CorporationInventors: Russell H. Arndt, Glenn Walton Gale, Frederick William Kern, Jr., Karen P. Madden, Harald F. Okorn-Schmidt, George Francis Ouimet, Jr., Dario Salgado, Ryan Wayne Wuthrich
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Patent number: 6150282Abstract: Etching residue is selectively removed employing a substantially non-aqueous composition containing a fluoride containing compound and certain organic solvents. Preferred compositions also include an anhydride.Type: GrantFiled: November 13, 1997Date of Patent: November 21, 2000Assignee: International Business Machines CorporationInventors: David L. Rath, Rangarajan Jagannathan, Kenneth J. McCullough, Harald F. Okorn-Schmidt, Karen P. Madden, Keith R. Pope
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Patent number: 6117796Abstract: Silicon oxide is removed from an article employing a liquid composition containing a fluoride-containing compound, organic solvent, and water. The methods of the invention are especially useful for removal of silicon oxide formed by thermal oxidation of a silicon substrate.Type: GrantFiled: August 13, 1998Date of Patent: September 12, 2000Assignee: International Business Machines CorporationInventors: Glenn W. Gale, Rangarajan Jagannathan, Karen P. Madden, Kenneth J. McCullough, Harald F. Okorn-Schmidt, Keith R. Pope, David L. Rath
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Patent number: 6066267Abstract: Silicon nitride is etched employing a composition containing a fluoride containing compound, certain organic solvents, and water.Type: GrantFiled: June 29, 1999Date of Patent: May 23, 2000Assignee: International Business Machines CorporationInventors: David L. Rath, Rangarajan Jagannathan, Kenneth J. McCullough, Harald F. Okorn-Schmidt, Karen P. Madden, Keith R. Pope
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Patent number: 6033996Abstract: Etching residue, etching mask and silicon nitride and/or silicon dioxide are etched or removed employing a composition containing a fluoride containing compound, water and certain organic solvents.Type: GrantFiled: November 13, 1997Date of Patent: March 7, 2000Assignee: International Business Machines CorporationInventors: David L. Rath, Rangarajan Jagannathan, Kenneth J. McCullough, Harald F. Okorn-Schmidt, Karen P. Madden, Keith R. Pope
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Patent number: 5965465Abstract: Silicon nitride is etched employing a composition containing a fluoride containing compound, certain organic solvents, and water.Type: GrantFiled: September 18, 1997Date of Patent: October 12, 1999Assignee: International Business Machines CorporationInventors: David L. Rath, Rangarajan Jagannathan, Kenneth J. McCullough, Harald F. Okorn-Schmidt, Karen P. Madden, Keith R. Pope
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Patent number: 5962384Abstract: A method is provided for treating a plurality of semiconductor substrates using the same aqueous SC-1 solution which solution removes and/or inhibits contamination of the semiconductor surfaces by metallic ions present in the solution or on the substrate surface comprising a basic solution containing hydrogen peroxide and an oxidation-resistant chelating additive such as CDTA in an amount effective to provide the desired treatment results. The SC-1 solution may be the conventional 5:1:1 (water:NH.sub.4 OH:H.sub.2 O.sub.2) solution or a dilute solution such as a 5:x:1 to 200:x:1 solution wherein x is 0.025 to 2.Type: GrantFiled: October 28, 1997Date of Patent: October 5, 1999Assignee: International Business Machines CorporationInventors: Emanuel I. Cooper, Scott A. Estes, Glenn W. Gale, Rangarajan Jagannathan, Harald F. Okorn-Schmidt, David L. Rath