Abstract: An apparatus for drying one or more workpieces. The apparatus includes the use of a chemically reactive additive to remove contaminants from the wafer surface during processing. In particular, during processing, a wafer is rinsed in a liquid bath and subsequently exposed to a chemically reactive additive. The chemically reactive additive creates a surface tension gradient that physically and chemically alters the properties of the film of the rinse liquid so that the liquid and any contaminants contained therein are removed from the water surface.

Abstract: Within a method for forming a metal-silicon layer there is first provided a reactor chamber. There is then positioned within the reactor chamber a substrate spaced from a metal source target. There is also provided within the reactor chamber a minimum of a sputter material and a reactive silicon material. There is then sputtered the metal source target positioned within the reactor chamber with the sputter material provided within the reactor chamber in the presence of the reactive silicon material provided within the reactor chamber to form a metal-silicon layer over the substrate. The method is particularly useful for forming metal silicate layers, metal silicon nitride layers and metal silicon oxynitride layers within microelectronic fabrications. An alternative method employs: (1) a silicon source target rather than a metal source target; and (2) a reactive metal material rather than a reactive silicon material.

Abstract: A method for drying one or more workpieces. The method includes the use of a chemically reactive additive to remove contaminants from the wafer surface during processing. In particular, during processing, a wafer is rinsed in a liquid bath and subsequently exposed to a chemically reactive additive. The chemically reactive additive creates a surface tension gradient that physically and chemically alters the properties of the film of the rise liquid so that the liquid and any contaminants contained therein are removed from the wafer surface.

Abstract: An apparatus and method for drying one or more workpieces. The apparatus and method include the use of a chemically reactive additive to remove contaminants from the wafer surface during processing. In particular, during processing, a wafer is rinsed in a liquid bath and subsequently exposed to a chemically reactive additive. The chemically reactive additive creates a surface tension gradient that physically and chemically alters the properties of the film of the rinse liquid so that the liquid and any contaminants contained therein are removed from the wafer surface.