Abstract: IC devices including IC devices including BPRs that form metal-semiconductor junctions with semiconductor sections where the BPRs are partially buried are disclosed. An example IC device includes a first layer comprising semiconductor structures, such as fins, nanowires, or nanoribbons. The IC device also includes a layer comprising an electrically conductive material and coupled to the semiconductor structures. The IC device further includes a support structure comprising a BPR and a semiconductor section. The BPR contacts with the semiconductor section and forms a metal-semiconductor junction. The metal-semiconductor junction constitutes a Schottky barrier for electrons. The IC device may include a SCR including a sequence of p-well, n-well, p-well, and n-well with Schottky barriers in the first p-well and the second n-well. The Schottky barrier may also be used as a guard ring to extract injected charge carriers.

Abstract: IC devices including inductors or transformers formed based on BPRs are disclosed. An example IC device includes semiconductor structures of one or more transistors, an electrically conductive layer, a support structure comprising a semiconductor material, and an inductor. The inductor includes an electrical conductor constituted by a power rail buried in the support structure. The inductor also includes a magnetic core coupled to the electrical conductor. The magnetic core includes magnetic rails buried in the support structure, magnetic TSVs buried in the support structure, and a magnetic plate at the backside of the support structure. The magnetic core includes a magnetic material, such as Fe, NiFe, CoZrTa, etc. In some embodiments, the IC device includes another power rail that is buried in the support structure and constitutes another electrical conductor coupled to the magnetic core. The two power rails and magnetic core can constitute a transformer.

Abstract: IC devices including BPRs with integrated decoupling capacitance are disclosed. An example IC device includes a first layer comprising a transistor and a support structure adjoining the first layer. The support structure includes BPRs, which are power rails buried in the support structure, and a decoupling capacitor based on the BPRs. The conductive cores of the BPRs are the electrodes of the decoupling capacitor. The dielectric barriers of the BPRs can be the dielectric of the decupling capacitor. The dielectric of the decupling capacitor may also include a dielectric element between the BPRs. Additionally or alternatively, the IC device includes another decoupling capacitor at the backside of the support structure. The other decoupling capacitor is coupled to the BPRs and can provide additional decoupling capacitance for stabilizing power supply facilitated by the BPRs.

Abstract: A semiconductor package comprises a semiconductor die and a wiring structure, which is electrically connected to the semiconductor die. Further, the semiconductor package comprises a magnetic material. The magnetic material embeds and/or encircles a portion of the wiring structure.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a plurality of transistors arranged at a front side of a semiconductor substrate and a test structure located at the front side of the semiconductor substrate. Further, the semiconductor structure comprises a first electrically conductive connection extending from the test structure through the semiconductor substrate to a backside test pad arranged at a backside of the semiconductor substrate.

Abstract: A device for identifying water on a surface, including an optical sensor and a processor. The optical sensor is configured to produce a first image of the surface which has a first optical bandwidth within which the water has a first absorption rate, and a second image of the surface which has a second optical bandwidth within which the water has a second absorption rate that is higher than the first absorption rate. The processor is configured to combine the first image and the second image to produce a combined image in which the surface is reduced or eliminated as compared to the water. In addition, the processor is configured to detect water in the combined image.

Abstract: IC devices including BHRs and TSVs for backside heat dissipation are disclosed. An example IC device includes semiconductor structures. The IC device also includes an electrically conductive layer coupled to the semiconductor structures. The IC device further includes one or more BHRs coupled to the electrically conductive layer. Each BHR is connected to a heat dissipation plate by a TSV buried in a support structure. The heat dissipation plate is at the backside of the support structure. The BHRs, TSVs, and heat dissipation plate can conduct heat generated by the semiconductor structures to the backside of the support structure. The BHRs may also be used as power rails for delivering power to the semiconductor structures. A TSV can be enlarged to have a larger cross-sectional area than the BHR for enhancing the heat dissipation. Also, the heat dissipation plate may exceed a cell boundary for sinking heat more efficiently.

Abstract: IC structures including BPRs used for ESD ballasting are disclosed. An IC structure includes semiconductor structures of one or more transistors. A semiconductor structure may be a fin, nanowire, or nanoribbon of a semiconductor material. The IC structure also includes an electrically conductive layer coupled to the semiconductor structures, a power rail, and a support structure. The power rail is coupled to the electrically conductive layer by a via. The power rail is buried in a support structure. The combination of the power rail and the via constitutes a ESD ballasting resistor for the semiconductor structures. A resistance of the ESD ballasting resistor can be in a range from 5 to 20 ohms. The IC structure may include two or more power rails. A power rail may be arranged between two of the semiconductor structures. The power rails may form a meander structure with other components of the IC structure.

Abstract: Embodiments of the invention provide an apparatus for detecting a state of a road surface. The apparatus includes an input interface, an image divider, a parameter calculator, and a classifier. The input interface is configured to obtain recording information of the road surface, such as a camera recording. The image divider is configured to divide the recording information into a plurality of windows, wherein each window includes a plurality of image elements, and wherein each image element includes at least two different pieces of information, such as a spectral absorption of the road surface and/or a polarization of the reflected light. The parameter calculator is configured to calculate at least two parameters per window by using the at least two different pieces of information of each image element in the window.

Abstract: Disclosed herein are IC devices, packages, and device assemblies that include III-N diodes with n-doped wells and capping layers. An example IC device includes a support structure and a III-N layer, provided over a portion of the support structure, the III-N layer including an n-doped well of a III-N semiconductor material having n-type dopants with a dopant concentration of at least 5×1017 dopants per cubic centimeter. The IC device further includes a first and a second electrodes and at least one capping layer. The first electrode interfaces a first portion of the n-doped well. The capping layer interfaces a second portion of the n-doped well and includes a semiconductor material with a dopant concentration below 1017 dopants per cubic centimeter. The second electrode is provided so that the capping layer is between the second portion of the n-doped well and the second electrode.

Abstract: A Group III-Nitride (III-N) device structure is provided which comprises: a heterostructure having three or more layers comprising III-N material, an anode within a recess that extends through two or more of the layers, wherein the anode is in electrical contact with the first layer, a cathode comprising donor dopants, wherein the cathode is on the first layer of the heterostructure; and a conducting region in the first layer in direct contact to the cathode and conductively connected to the anode. Other embodiments are also disclosed and claimed.

Abstract: A variable capacitance III-N device having multiple two-dimensional electron gas (2DEG) layers are described. In some embodiments, the device comprises a first source and a first drain; a first polarization layer adjacent to the first source and the first drain; a first channel layer coupled to the first source and the first drain and adjacent to the first polarization layer, the first channel layer comprising a first 2DEG region; a second source and a second drain; a second polarization layer adjacent to the second source and the second drain; and a second channel layer coupled to the second source and the second drain and adjacent to the second polarization layer, the second channel layer comprising a second 2DEG region, wherein the second channel layer is over the first polarization layer.

Abstract: A Group III-Nitride (III-N) device structure is provided comprising: a heterostructure having three or more layers comprising III-N material, an anode n+ region and a cathode comprising donor dopants, wherein the anode n+ region and the cathode are on the first layer of the heterostructure and wherein the anode n+ region and the cathode extend beyond the heterostructure, and an anode metal region within a recess that extends through two or more of the layers, wherein the anode metal region is in electrical contact with the first layer, wherein the anode metal region comprises a first width within the recess and a second width beyond the recess, and wherein the anode metal region is coupled with the anode n+ region. Other embodiments are also disclosed and claimed.

Abstract: A variable capacitance III-N device having multiple two-dimensional electron gas (2DEG) layers are described. In some embodiments, the device comprises a first source and a first drain; a first polarization layer adjacent to the first source and the first drain; a first channel layer coupled to the first source and the first drain and adjacent to the first polarization layer, the first channel layer comprising a first 2DEG region; a second source and a second drain; a second polarization layer adjacent to the second source and the second drain; and a second channel layer coupled to the second source and the second drain and adjacent to the second polarization layer, the second channel layer comprising a second 2DEG region, wherein the second channel layer is over the first polarization layer.

Abstract: A Group III-Nitride (III-N) device structure is presented comprising: a heterostructure having three or more layers comprising III-N material, a cathode comprising donor dopants, wherein the cathode is on a first layer of the heterostructure, an anode within a recess that extends through two or more of the layers of the heterostructure, wherein the anode comprises a first region wherein the anode is separated from the heterostructure by a high k dielectric material, and a second region wherein the anode is in direct contact with the heterostructure, and a conducting region in the first layer in direct contact to the cathode and conductively connected to the anode. Other embodiments are also disclosed and claimed.

Abstract: A circuit for electrostatic discharge (ESD) protection for wide frequency range multi-band interfaces. The interface may be split into a plurality of signal paths. Each signal path may include an ESD protection circuit configured to shunt an ESD current on each signal path to either ground or supply voltage and a filter configured to block signals from other signal paths. The signal paths are connected to a common signal line such that the signals for the plurality of signal paths can be transported simultaneously. The plurality of signal paths may be a high frequency path and a low frequency path. The low frequency path may include an inductor connected in series and the high frequency path may include a capacitor or transformer connected in series. The ESD protection circuit on each signal path is placed behind the inductor, the capacitor or the transformer.

Abstract: A device for identifying water on a surface, including an optical sensor and a processor. The optical sensor is configured to produce a first image of the surface which has a first optical bandwidth within which the water has a first absorption rate, and a second image of the surface which has a second optical bandwidth within which the water has a second absorption rate that is higher than the first absorption rate. The processor is configured to combine the first image and the second image to produce a combined image in which the surface is reduced or eliminated as compared to the water. In addition, the processor is configured to detect water in the combined image.

Abstract: A circuit for electrostatic discharge (ESD) protection for wide frequency range multi-band interfaces. The interface may be split into a plurality of signal paths. Each signal path may include an ESD protection circuit configured to shunt an ESD current on each signal path to either ground or supply voltage and a filter configured to block signals from other signal paths. The signal paths are connected to a common signal line such that the signals for the plurality of signal paths can be transported simultaneously. The plurality of signal paths may be a high frequency path and a low frequency path. The low frequency path may include an inductor connected in series and the high frequency path may include a capacitor or transformer connected in series. The ESD protection circuit on each signal path is placed behind the inductor, the capacitor or the transformer.

Abstract: A Group III-Nitride (III-N) device structure is provided which comprises: a heterostructure having three or more layers comprising III-N material, an anode within a recess that extends through two or more of the layers, wherein the anode is in electrical contact with the first layer, a cathode comprising donor dopants, wherein the cathode is on the first layer of the heterostructure; and a conducting region in the first layer in direct contact to the cathode and conductively connected to the anode. Other embodiments are also disclosed and claimed.

Abstract: A Group III-Nitride (III-N) device structure is presented comprising: a heterostructure having three or more layers comprising material, a cathode comprising donor dopants, wherein the cathode is on a first layer of the heterostructure, an anode within a recess that extends through two or more of the layers of the heterostructure, wherein the anode comprises a first region wherein the anode is separated from the heterostructure by a high k dielectric material, and a second region wherein the anode is in direct contact with the heterostructure, and a conducting region in the first layer in direct contact to the cathode and conductively connected to the anode. Other embodiments are also disclosed and claimed.