Abstract: A method for producing a low-emissivity layer system includes the steps of forming at least one low emissivity layer on at least one side of the substrate by deposition, and subsequent brief tempering of a deposited low emissivity layer by electromagnetic radiation, avoiding an immediate heating up of the substrate. A device for performing the method includes a flash lamp arrangement.

Abstract: A flash lamp with a gas fill for suppressing self-starting includes an elongate discharge tube having two electrodes arranged in the discharge tube at opposite ends of the discharge tube. A starting electrode for applying a starting voltage is arranged outside the discharge tube, and the discharge tube has a length of at least 1000 mm and is filled with a gas fill. In order to suppress undesired self-starting, the discharge tube is filled with a gas mixture which contains at least one inert gas and at least one gas suppressing self-starting.

Abstract: A substrate treatment installation includes an installation chamber and a light source for the exposure of substrates to light. The light source is arranged in the interior of the substrate treatment installation and includes at least one discharge lamp arranged in a housing, which is permeable to light at least in sections and has a vacuum-tight cavity for accommodating the lamp, and also at least one reflector element arranged in spatial proximity to the at least one lamp and having an electrical connection.

Abstract: A flash lamp with a gas fill for suppressing self-starting includes an elongate discharge tube having two electrodes arranged in the discharge tube at opposite ends of the discharge tube. A starting electrode for applying a starting voltage is arranged outside the discharge tube, and the discharge tube has a length of at least 1000 mm and is filled with a gas fill. In order to suppress undesired self-starting, the discharge tube is filled with a gas mixture which contains at least one inert gas and at least one gas suppressing self-starting.

Abstract: In a method for coating substrates with materials to be vaporized in a vacuum coating system, the vaporization material is deposited on the substrate by double vaporization using an intermediate carrier. The intermediate carrier is continuously moved and cylindrical.

Abstract: A method for producing a low-emissivity layer system includes the steps of forming at least one low-emissivity layer on at least one side of the substrate by deposition, and subsequent brief tempering of a deposited low-emissivity layer by electromagnetic radiation, avoiding an immediate heating up of the substrate. A device for performing the method includes a flash lamp arrangement.

Abstract: A substrate treatment installation includes an installation chamber and a light source for the exposure of substrates to light. The light source is arranged in the interior of the substrate treatment installation and includes at least one discharge lamp arranged in a housing, which is permeable to light at least in sections and has a vacuum-tight cavity for accommodating the lamp, and also at least one reflector element arranged in spatial proximity to the at least one lamp and having an electrical connection.

Abstract: A process and a device for coating substrates with a stoichiometric gradient in an in-line coating system include at least two evaporation devices, each with an evaporator tube. The evaporator tubes are implemented so as to be tiltable independently of one another, whereby the transition area of the two vapor lobes can be adapted to the requirements of the gradient profile. Furthermore, the spacing of the evaporator tubes from the substrate and each other can be set.

Abstract: A process and a device for coating substrates with a stoichiometric gradient in an in-line coating system include at least two evaporation devices, each with an evaporator tube. The evaporator tubes are implemented so as to be tiltable independently of one another, whereby the transition area of the two vapor lobes can be adapted to the requirements of the gradient profile. Furthermore, the spacing of the evaporator tubes from the substrate and each other can be set.

Abstract: An apparatus for transporting strip-like material, has a treatment roller and at least one transporting or strip-gliding roller. The at least one transporting or strip-guiding roller is arranged upstream or downstream of the treatment roller, and comprises a twisting roller having an axis of rotation which encloses an angle other than 0° in relation to an axis of rotation of the treatment roller. The twisting roller rotates the course taken by the strip-like material in relation to the course defined by the surface of the treatment roller.

Abstract: In a method for coating substrates with materials to be vaporized in a vacuum coating system, the vaporization material is deposited on the substrate by double vaporization using an intermediate carrier. The intermediate carrier is continuously moved and.

Abstract: A process and a device for coating substrates with a stoichiometric gradient in an in-line coating system include at least two evaporation devices, each with an evaporator tube. The evaporator tubes are implemented so as to be tiltable independently of one another, whereby the transition area of the two vapor lobes can be adapted to the requirements of the gradient profile. Furthermore, the spacing of the evaporator tubes from the substrate and each other can be set.

Abstract: A method of fabricating a semiconductor component includes providing a prefabricated frame that includes metal traces and lead-through contacts. A semiconductor chip is mounted into the prefabricated frame such that the semiconductor chip is embedded within a rim of the prefabricated frame. Contact regions on a surface of the semiconductor chip are electrically connected with the metal traces of the prefabricated frame such that the contact regions are electrically coupled to the lead-through contacts via the metal traces.

Abstract: The present invention relates to a semiconductor chip comprising a semiconductor element, at least a conducting line and a contact area being arranged on the semiconductor element, the conducting line being connected with the contact area, the contact area being disposed for contacting another electrical contact, characterised in that the semiconductor element comprises at a face of the semiconductor element a flexible arm formed out of the semiconductor element and the contacting area being arranged on the arm.

Abstract: A semiconductor device includes a completed semiconductor chip and a dielectric layer overlying the completed semiconductor chip. A redistribution layer overlies the completed semiconductor chip and is embedded in the dielectric layer. The redistribution layer includes a plurality of microstrip conductors. Each microstrip conductor has a height and a width selected such that the height is at least twice the width. In addition, each microstrip conductor is separated from an adjacent microstrip conductor by a spacing distance that is at least twice the width.

Abstract: The method of the present invention relates to a method for producing a chip stack comprising the steps of manufacturing at least a first and a second integrated structure on a single substrate, an area of the first integrated structure and an area of the second integrated structure adjoining a respective first and second kerf area; providing a first redistribution layer on the first integrated structure on the substrate, said first redistribution layer at least partially extending beyond the area of the first integrated structure into the first kerf area, thereby forming a first integrated device area, wherein a first contact pad is arranged on the first redistribution layer in a first contacting area overlapping the first kerf area; providing a second redistribution layer on a second integrated structure on the substrate, including a second contact pad, thereby forming a second integrated device area; separating the first and second integrated device areas along a separation line defined by at least one of

Abstract: The invention relates to a method for damping of the rolling motion of a water vehicle, in particular roll stabilization of a ship with at least one propeller, comprising a rotating wheel body, which bears axis parallel blades on the outer circumference, said blades being pivoted around their longitudinal axis; in which case in dependency on a quantity at least indirectly characterizing the rolling motion of the water vehicle by modification of the pitch a thrust is generated which counteracts the rolling motion; characterized by the following features: the modification of the pitch for generation of a counterthrust takes place optionally in the recording of a quantity characterizing the rolling motion of the ship or a signal for activation of the roll stabilization; in which case in dependency on a default value of the current transverse pitch set on the wings acting as an actual value a modification of the transverse pitch takes place.

Abstract: We have developed a particular combination of elements and devices which enables the portability of a scanning electron microscope (SEM). In particular the combination enables a small size, typically less than about 50 liters, a manageable weight, typically less than about 15 kg, and a low power requirement, typically less than about 100 W, which permits operation using power supplied from a portable source such as a battery. Higher performance versions may exhibit increased volume in the range of about 150 liters, increased weight, in the range of 45 kg, and a power requirement in the range of 300 W. The higher performance version of the portable scanning electron microscope may be portable with the assistance of a dolly (rolling cart) or with the assistance of attached wheels and pulling appendage.

Abstract: A semiconductor device includes a completed semiconductor chip and a dielectric layer overlying the completed semiconductor chip. A redistribution layer overlies the completed semiconductor chip and is embedded in the dielectric layer. The redistribution layer includes a plurality of microstrip conductors. Each microstrip conductor has a height and a width selected such that the height is at least twice the width. In addition, each microstrip conductor is separated from an adjacent microstrip conductor by a spacing distance that is at least twice the width.

Abstract: The method of the present invention relates to a method for producing a chip stack comprising the steps of manufacturing at least a first and a second integrated structure on a single substrate, an area of the first integrated structure and an area of the second integrated structure adjoining a respective first and second kerf area; providing a first redistribution layer on the first integrated structure on the substrate, said first redistribution layer at least partially extending beyond the area of the first integrated structure into the first kerf area, thereby forming a first integrated device area, wherein a first contact pad is arranged on the first redistribution layer in a first contacting area overlapping the first kerf area; providing a second redistribution layer on a second integrated structure on the substrate, including a second contact pad, thereby forming a second integrated device area; separating the first and second integrated device areas along a separation line defined by at least one of