Patents by Inventor Harald Hoeltge

Harald Hoeltge has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MOS transistor having three gate electrodes
    Patent number: 5378913
    Abstract: An MOS transistor has a source region, a drain region, first gate electrode with a first channel zone allocated to it, second gate electrodes having a second channel zone allocated to it, and a third gate electrode with a corresponding third channel zone. The second channel zone is more highly doped than the base material in which the MOS transistor is formed, while the third channel zone is more lightly doped than the second channel zone. The second and third gate electrodes are conductively connected so that higher drain voltages are accommodated at high-frequencies while avoiding tunnel punch-through.
    Type: Grant
    Filed: September 10, 1993
    Date of Patent: January 3, 1995
    Assignee: Siemens Aktiengesellschaft
    Inventor: Harald Hoeltge