Abstract: A wafer carrier may include a first main surface suitable for receiving wafers, a second main surface arranged on a side opposite to the first main surface, and an annular depression or an elevation containing wafer carrier material in the region of the second main surface, concentric with respect to the wafer carrier.

Abstract: A method and device for slurrying a suspension, the device including a mixing container with an inlet opening configured to introduce the suspension into the mixing container, a distributor element having a collecting container and an outlet arm fastened to the collecting container, and a shaft with a longitudinal axis, with the shaft and the distributor element arranged inside the mixing container, and the distributor element rotatable around the shaft. The collecting container has a collecting opening that permits passage of the suspension from the inlet opening into the distributor element, the outlet arm has an outflow opening that lets the suspension leave the distributor element, and the outlet arm permitting the suspension to flow out of the distributor element, with a flow of the suspension causing a torque on the distributor element so that the torque supports a rotation around the shaft.

Abstract: A device for slurrying a suspension and a method for operating such a device are disclosed.

Abstract: The method is designed for producing optoelectronic semiconductor chips and comprises the steps: A) providing a carrier substrate (1), B) applying a semiconductor layer sequence (2) onto the carrier substrate (1), and C) detaching the finished semiconductor layer sequence (2) from the carrier substrate (1) by means of laser radiation (R) with a wavelength (L) through the carrier substrate (1), wherein the semiconductor layer sequence (2) has a buffer layer stack (20) and a functional stack with an active layer (21) for generating light (22), the absorber layer (23) is grown within the buffer layer stack (20) from a material for absorbing the laser radiation (R) and all the remaining layers (24 and 25) of the buffer layer stack (20) are transmissive to the laser radiation (R), a material of the functional stack (22) preferably has an absorbent action for the laser radiation (R), and in step C) the semiconductor layer sequence (2) is detached in the region of the absorber layer (23).

Abstract: The method is designed for producing optoelectronic semiconductor chips and comprises the steps: A) providing a carrier substrate (1), B) applying a semiconductor layer sequence (2) onto the carrier substrate (1), and C) detaching the finished semiconductor layer sequence (2) from the carrier substrate (1) by means of laser radiation (R) with a wavelength (L) through the carrier substrate (1), wherein the semiconductor layer sequence (2) has a buffer layer stack (20) and a functional stack with an active layer (21) for generating light (22), the absorber layer (23) is grown within the buffer layer stack (20) from a material for absorbing the laser radiation (R) and all the remaining layers (24 and 25) of the buffer layer stack (20) are transmissive to the laser radiation (R), a material of the functional stack (22) preferably has an absorbent action for the laser radiation (R), and in step C) the semiconductor layer sequence (2) is detached in the region of the absorber layer (23).