Abstract: We have developed a method of anodic bonding which directs cations to a location within a bonding structure which is away from critical bonding surfaces. This prevents the formation of compounds comprising the cations at the critical bonding surfaces. The anodic bonding electrode contacts are made in a manner which concentrates the cations and compounds thereof in a portion of the bonded structure which can be removed, or cleaned to remove the compounds from the structure. A device formed from the bonded structure contains minimal, if any, of the cation-comprising compounds which weaken bond strength within the structure. In the alternative, the cations and compounds thereof are directed to a portion of the bonding structure which does not affect the function of a device which includes the bonded structure.

Abstract: Disclosed herein are methods of fabricating three dimensional Micro-Electro-Mechanical-Systems (MEMS). This method involved stacking of silicon-containing components which are separated by spacers. The stacked components are precision aligned and then may be bonded, retained or fastened together to form a rigid structure. Spaces created between MEMS device components by the separations may be filled with an electrically isolating fluid such as a gas or vacuum. Also disclosed is a method of aligning components relative to each other and an alignment jig which may be used to align the components.

Abstract: Disclosed herein are methods of preparing vertical electrical interconnects within multiple layers of substrates, where a portion of the substrate layers are glass and a portion of the substrate layers are single-crystal silicon. The methods taught herein can be used to prepare basic “units” which can be stacked and anodically bonded together to form electrically connected, multi-unit structures. The methods of the invention are particularly advantageous in the fabrication of microcolumns, and especially an array of microcolumns of the kind used in electron optics, including electron microscopes and lithography apparatus.

Abstract: Disclosed is a method of forming a thick silicon oxide layer upon or internal to a silicon structure. The method is particularly useful in creating isolation regions within a silicon-containing structure, where such isolation regions can withstand high voltages. The electrically isolating thick silicon oxide layer or isolation regions can be shaped, machined, or etched to provide feedthroughs for vertical or horizontal interconnects. The feedthroughs may be coated with metal or filled with metal to provide the interconnect.

Abstract: Disclosed herein are methods of fabricating three dimensional Micro-Electro-Mechanical-Systems (MEMS). This method involved stacking of silicon-containing components which are separated by spacers. The stacked components are precision aligned and then may be bonded, retained or fastened together to form a rigid structure. Spaces created between MEMS device components by the separations may be filled with an electrically isolating fluid such as a gas or vacuum. Also disclosed is a method of aligning components relative to each other and an alignment jig which may be used to align the components.

Abstract: Disclosed herein are methods of preparing vertical electrical interconnects within multiple layers of substrates, where a portion of the substrate layers are glass and a portion of the substrate layers are single-crystal silicon. The methods taught herein can be used to prepare basic “units” which can be stacked and anodically bonded together to form electrically connected, multi-unit structures. The methods of the invention are particularly advantageous in the fabrication of microcolumns, and especially an array of microcolumns of the kind used in electron optics, including electron microscopes and lithography apparatus.

Abstract: Disclosed is a method of forming a thick silicon oxide layer upon or internal to a silicon structure. The method is particularly useful in creating isolation regions within a silicon-containing structure, where such isolation regions can withstand high voltages. The electrically isolating thick silicon oxide layer or isolation regions can be shaped, machined, or etched to provide feedthroughs for vertical or horizontal interconnects. The feedthroughs may be coated with metal or filled with metal to provide the interconnect.

Abstract: We have developed a method of anodic bonding which directs cations to a location within a bonding structure which is away from critical bonding surfaces. This prevents the formation of compounds comprising the cations at the critical bonding surfaces. The anodic bonding electrode contacts are made in a manner which concentrates the cations and compounds thereof in a portion of the bonded structure which can be removed, or cleaned to remove the compounds from the structure. A device formed from the bonded structure contains minimal, if any, of the cation-comprising compounds which weaken bond strength within the structure. In the alternative, the cations and compounds thereof are directed to a portion of the bonding structure which does not affect the function of a device which includes the bonded structure.

Abstract: We have developed a method of anodic bonding which directs cations to a location within a bonding structure which is away from critical bonding surfaces. This prevents the formation of compounds comprising the cations at the critical bonding surfaces. The anodic bonding electrode contacts are made in a manner which concentrates the cations and compounds thereof in a portion of the bonded structure which can be removed, or cleaned to remove the compounds from the structure. A device formed from the bonded structure contains minimal, if any, of the cation-comprising compounds which weaken bond strength within the structure. In the alternative, the cations and compounds thereof are directed to a portion of the bonding structure which does not affect the function of a device which includes the bonded structure.

Abstract: We have developed a method of anodic bonding which directs cations to a location within a bonding structure which is away from critical bonding surfaces. This prevents the formation of compounds comprising the cations at the critical bonding surfaces. The anodic bonding electrode contacts are made in a manner which concentrates the cations and compounds thereof in a portion of the bonded structure which can be removed, or cleaned to remove the compounds from the structure. A device formed from the bonded structure contains minimal, if any, of the cation-comprising compounds which weaken bond strength within the structure. In the alternative, the cations and compounds thereof are directed to a portion of the bonding structure which does not affect the function of a device which includes the bonded structure.