Abstract: A method is useful for preparing partially hydrogenated chlorosilanes by selective hydrogenation with a compound of the formula R2AlH, wherein R is a branched or cyclic hydrocarbon. Partially hydrogenated chlorosilanes can be prepared with said method, in particular partially hydrogenated chlorosilanes represented by the formula Cl3SiSi(SiH3)3, (Cl3Si)2Si(SiH3)2 or HSi(SiH3)2SiCl3.

Abstract: Compounds according to general formula (I) in which M is Ge or Sn, RAr is R1, R2, R3, R4, R5, independently of one another in each case, are —H, —F, —Cl, —OR6, —SR6, —N(R6)2, —CF3, —CN, —NO2, —COOR6, —CONHR6, a branched, cyclic or preferably linear C1-20 alkyl, C2-20 alkenyl, C1-20 alkyloxy or a C2-20 alkenoxy radical, which can be interrupted one or more times by O, S or —NR6— and substituted by one or more polymerizable groups and/or radicals R6, R6 is H, a branched, cyclic or preferably linear C1-20 alkyl or C2-20 alkenyl radical, R7 is a chemical bond, an n-valent aromatic radical or a branched, cyclic or preferably linear C1-20 alkylene radical, which can be interrupted one or more times by O, S or —NR6— and substituted by one or more polymerizable groups, ?O and/or radicals R6, n is 2 or 3 and m is 0 or 1. The compounds are particularly suitable as photoinitiators for radical polymerization and in particular for the production of dental materials.

Abstract: A method is useful for preparing partially hydrogenated chlorosilanes by selective hydrogenation with a compound of the formula R2AlH, wherein R is a branched or cyclic hydrocarbon. Partially hydrogenated chlorosilanes can be prepared with said method, in particular partially hydrogenated chlorosilanes represented by the formula Cl3SiSi(SiH3)3, (Cl3Si)2Si(SiH3)2 or HSi(SiH3)2SiCl3.

Abstract: Compounds according to general formula (I) in which M is Ge or Sn, RAr is R1, R2, R3, R4, R5, independently of one another in each case, are —H, —F, —Cl, —OR6, —SR6, —N(R6)2, —CF3, —CN, —NO2, —COOR6, —CONHR6, a branched, cyclic or preferably linear C1-20 alkyl, C2-20 alkenyl, C1-20 alkyloxy or a C2-20 alkenoxy radical, which can be interrupted one or more times by O, S or —NR6— and substituted by one or more polymerizable groups and/or radicals R6, R6 is H, a branched, cyclic or preferably linear C1-20 alkyl or C2-20 alkenyl radical, R7 is a chemical bond, an n-valent aromatic radical or a branched, cyclic or preferably linear C1-20 alkylene radical, which can be interrupted one or more times by O, S or —NR6— and substituted by one or more polymerizable groups, ?O and/or radicals R6, n is 2 or 3 and m is 0 or 1. The compounds are particularly suitable as photoinitiators for radical polymerization and in particular for the production of dental materials.

Abstract: Acyl germanium compound according to general formula [RmAr—(C?O)—]4—Ge and process for the preparation thereof. The compound is suitable as initiator for radical polymerization.

Abstract: Acyl germanium compound according to general formula [RmAr—(C?O)—]4—Ge and process for the preparation thereof. The compound is suitable as initiator for radical polymerization.

Abstract: Acyl germanium compound according to general formula [RmAr—(C?O)—]4—Ge and process for the preparation thereof. The compound is suitable as initiator for radical polymerization.

Abstract: The present invention relates to compositions comprising at least one hydridosilane of the generic formula SinHm with n?5 and m=(2n) and (2n+2) and at least one compound of the formula HnB (OR)3?n with R=C1-C10-alkyl, C6-C10-aryl, C7-C14-aralkyl, halogen, n=0, 1, 2, to processes for preparation thereof and use thereof.

Abstract: The present invention provides the octasilane 2,2,3,3-tetrasilyltetrasilane 1, compositions comprising one or more additional constituents that are not 1 as well as 2,2,3,3-tetrasilyltetrasilane 1, processes for preparing 2,2,3,3-tetrasilyltetrasilane 1 and mixtures of higher hydridosilanes that include 1. The present invention further provides for the use of 1 and mixtures of higher hydridosilanes including 1 for deposition of silicon-containing material.

Abstract: The present invention relates to compositions comprising at least one hydridosilane of the generic formula SinHm with n?5 and m=(2n) and (2n+2) and at least one compound of the formula HnB (OR)3-n with R=C1-C10-alkyl, C6-C10-aryl, C7-C14-aralkyl, halogen, n=0, 1, 2, to processes for preparation thereof and use thereof.

Abstract: Acyl germanium compound according to general formula [RmAr—(C?O)—]4—Ge and process for the preparation thereof. The compound is suitable as initiator for radical polymerization.

Abstract: The invention relates to a process for preparing higher halosilanes by disproportionation of lower halosilanes. The invention further relates to a process for preparing higher hydridosilanes from the higher halosilanes prepared by disproportionation. The invention further relates to mixtures containing at least one higher halosilane or at least one higher hydridosilane prepared by the process described. Finally, the invention relates to the use of such a mixture containing at least one higher hydridosilane for producing electronic or optoelectronic component layers or for producing silicon-containing layers.

Abstract: The present invention provides processes for preparing carbon-containing hydridosilanes, in which an optionally boron- or phosphorus-doped hydridosilane is reacted without catalyst and reducing agent with at least one carbon source selected from linear, branched or cyclic carbosilanes, halogenated hydrocarbons, carbenes, alkyl azides, diazomethane, dimethyl sulphate or alcohols, the carbon-containing hydridosilane oligomers obtainable by the process and the use thereof.

Abstract: The invention relates to a process for producing p-doped silicon layers, especially those silicon layers which are produced from liquid silane-containing formulations. The invention further relates to a substrate coated with a p-doped silicon layer. The invention additionally relates to the use of particular dopants based on boron compounds for p-doping of a silicon layer.

Abstract: The present invention provides processes for preparing carbon-containing hydridosilanes, in which an optionally boron- or phosphorus-doped hydridosilane is reacted without catalyst and reducing agent with at least one carbon source selected from linear, branched or cyclic carbosilanes, halogenated hydrocarbons, carbenes, alkyl azides, diazomethane, dimethyl sulphate or alcohols, the carbon-containing hydridosilane oligomers obtainable by the process and the use thereof.

Abstract: The invention relates to a method for producing hydridosilanes from halosilanes by a) reacting i) at least one halosilane of the generic formula SinX2n+2 (with n?3 and X?F, Cl, Br and/or I) with ii) at least one catalyst of the generic formula NRR'aR?bYc with a=0 or 1, b=0 or 1, and c=0 or 1, and formula (I), wherein aa) R, R? and/or R? are —C1-C12 alkyl, —C1-C12 aryl, —C1-C12 aralkyl, —C1-C12 aminoalkyl, —C1-C12 aminoaryl, —C1-C12 aminoaralkyl, and/or two or three groups R, R? and R? (if c=0) together form a cyclic or bicyclic, heteroaliphatic or heteroaromatic system including N, with the proviso that at least one group R, R? or R? is unequal —CH3 and/or wherein bb) R and R? and/or R?' (if c=1) are —C1-C12 alkylene, —C1-C12 arylene, —C1-C12 aralkylene, —C1-C12 heteroalkylene, —C1-C12 heteroarylene, —C1-C12 heteroaralkylene and/or —N?, or cc) (if a=b=c=0) R??C-R?? (with R???—C1-C10 alkyl, —C1-C10 aryl and/or —C1-C10 aralkyl), while forming a mixture comprising at least one halosilane of the generic formula S

Abstract: Process for preparing higher hydridosilanes of the general formula H—(SiH2)n—H where n?2, in which—one or more lower hydridosilanes—hydrogen, and—one or more transition metal compounds comprising elements of transition group VIII of the Periodic Table and the lanthanides are reacted at a pressure of more than 5 bar absolute, subsequently depressurized and the higher hydridosilanes are separated off from the reaction mixture obtained.

Abstract: The invention relates to a process for producing p-doped silicon layers, especially those silicon layers which are produced from liquid silane-containing formulations. The invention further relates to a substrate coated with a p-doped silicon layer. The invention additionally relates to the use of particular dopants based on boron compounds for p-doping of a silicon layer.

Abstract: The invention relates to a method for producing hydridosilanes from halosilanes by a) reacting i) at least one halosilane of the generic formula SinX2n+2 (with n?3 and X?F, Cl, Br and/or I) with ii) at least one catalyst of the generic formula NRR'aR?bYc with a=0 or 1, b=0 or 1, and c=0 or 1, and formula (I), wherein aa) R, R? and/or R? are —C1-C12 alkyl, —C1-C12 aryl, —C1-C12 aralkyl, —C1-C12 aminoalkyl, —C1-C12 aminoaryl, —C1-C12 aminoaralkyl, and/or two or three groups R, R? and R? (if c=0) together form a cyclic or bicyclic, heteroaliphatic or heteroaromatic system including N, with the proviso that at least one group R, R? or R? is unequal —CH3 and/or wherein bb) R and R? and/or R?' (if c=1) are —C1-C12 alkylene, —C1-C12 arylene, —C1-C12 aralkylene, —C1-C12 heteroalkylene, —C1-C12 heteroarylene, —C1-C12 heteroaralkylene and/or —N?, or cc) (if a=b=c=0) R??C-R?? (with R???—C1-C10 alkyl, —C1-C10 aryl and/or —C1-C10 aralkyl), while forming a mixture comprising at least one halosilane of the generic formula S

Abstract: Process for preparing higher hydridosilanes of the general formula H—(SiH2)n—H where n?2, in which—one or more lower hydridosilanes—hydrogen, and—one or more transition metal compounds comprising elements of transition group VIII of the Periodic Table and the lanthanides are reacted at a pressure of more than 5 bar absolute, subsequently depressurized and the higher hydridosilanes are separated off from the reaction mixture obtained.