Abstract: A method is useful for preparing partially hydrogenated chlorosilanes by selective hydrogenation with a compound of the formula R2AlH, wherein R is a branched or cyclic hydrocarbon. Partially hydrogenated chlorosilanes can be prepared with said method, in particular partially hydrogenated chlorosilanes represented by the formula Cl3SiSi(SiH3)3, (Cl3Si)2Si(SiH3)2 or HSi(SiH3)2SiCl3.

Abstract: Compounds according to general formula (I) in which M is Ge or Sn, RAr is R1, R2, R3, R4, R5, independently of one another in each case, are —H, —F, —Cl, —OR6, —SR6, —N(R6)2, —CF3, —CN, —NO2, —COOR6, —CONHR6, a branched, cyclic or preferably linear C1-20 alkyl, C2-20 alkenyl, C1-20 alkyloxy or a C2-20 alkenoxy radical, which can be interrupted one or more times by O, S or —NR6— and substituted by one or more polymerizable groups and/or radicals R6, R6 is H, a branched, cyclic or preferably linear C1-20 alkyl or C2-20 alkenyl radical, R7 is a chemical bond, an n-valent aromatic radical or a branched, cyclic or preferably linear C1-20 alkylene radical, which can be interrupted one or more times by O, S or —NR6— and substituted by one or more polymerizable groups, ?O and/or radicals R6, n is 2 or 3 and m is 0 or 1. The compounds are particularly suitable as photoinitiators for radical polymerization and in particular for the production of dental materials.

Abstract: A method is useful for preparing partially hydrogenated chlorosilanes by selective hydrogenation with a compound of the formula R2AlH, wherein R is a branched or cyclic hydrocarbon. Partially hydrogenated chlorosilanes can be prepared with said method, in particular partially hydrogenated chlorosilanes represented by the formula Cl3SiSi(SiH3)3, (Cl3Si)2Si(SiH3)2 or HSi(SiH3)2SiCl3.

Abstract: Compounds according to general formula (I) in which M is Ge or Sn, RAr is R1, R2, R3, R4, R5, independently of one another in each case, are —H, —F, —Cl, —OR6, —SR6, —N(R6)2, —CF3, —CN, —NO2, —COOR6, —CONHR6, a branched, cyclic or preferably linear C1-20 alkyl, C2-20 alkenyl, C1-20 alkyloxy or a C2-20 alkenoxy radical, which can be interrupted one or more times by O, S or —NR6— and substituted by one or more polymerizable groups and/or radicals R6, R6 is H, a branched, cyclic or preferably linear C1-20 alkyl or C2-20 alkenyl radical, R7 is a chemical bond, an n-valent aromatic radical or a branched, cyclic or preferably linear C1-20 alkylene radical, which can be interrupted one or more times by O, S or —NR6— and substituted by one or more polymerizable groups, ?O and/or radicals R6, n is 2 or 3 and m is 0 or 1. The compounds are particularly suitable as photoinitiators for radical polymerization and in particular for the production of dental materials.

Abstract: Acyl germanium compound according to general formula [RmAr—(C?O)—]4—Ge and process for the preparation thereof. The compound is suitable as initiator for radical polymerization.

Abstract: Acyl germanium compound according to general formula [RmAr—(C?O)—]4—Ge and process for the preparation thereof. The compound is suitable as initiator for radical polymerization.

Abstract: Acyl germanium compound according to general formula [RmAr—(C?O)—]4—Ge and process for the preparation thereof. The compound is suitable as initiator for radical polymerization.

Abstract: Acyl germanium compound according to general formula [RmAr—(C?O)—]4—Ge and process for the preparation thereof. The compound is suitable as initiator for radical polymerization.

Abstract: Process for preparing higher hydridosilanes of the general formula H—(SiH2)n—H where n?2, in which—one or more lower hydridosilanes—hydrogen, and—one or more transition metal compounds comprising elements of transition group VIII of the Periodic Table and the lanthanides are reacted at a pressure of more than 5 bar absolute, subsequently depressurized and the higher hydridosilanes are separated off from the reaction mixture obtained.

Abstract: The invention relates to a process for preparing higher halosilanes by disproportionation of lower halosilanes. The invention further relates to a process for preparing higher hydridosilanes from the higher halosilanes prepared by disproportionation. The invention further relates to mixtures containing at least one higher halosilane or at least one higher hydridosilane prepared by the process described. Finally, the invention relates to the use of such a mixture containing at least one higher hydridosilane for producing electronic or optoelectronic component layers or for producing silicon-containing layers.

Abstract: Process for preparing higher hydridosilanes of the general formula H—(SiH2)n—H where n?2, in which—one or more lower hydridosilanes—hydrogen, and—one or more transition metal compounds comprising elements of transition group VIII of the Periodic Table and the lanthanides are reacted at a pressure of more than 5 bar absolute, subsequently depressurized and the higher hydridosilanes are separated off from the reaction mixture obtained.

Abstract: Organofunctional silanes are prepared in high yield by electrochemically reacting a silane bearing a halo or alkoxy group with a hydrocarbon bearing a halo or alkoxy group in an undivided electrolysis cell with no or minimal complexing agent present.