Abstract: This invention relates to water-based alkaline cleaning solutions and their use as an environmentally safer replacement of organic solvents to remove photoresist, polyimide residue and other interlevel dielectric polymer coating residue from polymer film apply equipment, specifically, spin coater bowl and assembly parts consisting of a teflon top shield, stainless steel plate, and a bottom teflon spin coating bowl used in semiconductor device fabrication processes.

Abstract: This invention relates to water-based alkaline cleaning solutions and their use as an environmentally safer replacement of organic solvents to remove photoresist, polyimide residue and other interlevel dielectric polymer coating residue from polymer film apply equipment, specifically, spin coater bowl and assembly parts consisting of a teflon top shield, stainless steel plate, and a bottom teflon spin coating bowl used in semiconductor device fabrication processes.

Abstract: Photosensitive silicon-containing resist compositions comprising hydroxyphenylsilsesquioxanes and siloxanes partially estersified with diazonaphthoquinone sulfonyloxy groups for imageable O.sub.2 RIE barrier films. Methods for forming image patterns on substrates using these photosensitive silicon-containing resist compositions are also provided.

Abstract: A method is provided for forming a microlithographic relief image having a width of less than one half micron in a bilayer resist composition. The resist composition comprises a single component, silicon-containing photoimageable layer and a polymeric underlayer having a high optical density and a refractive index similar to the refractive index of the overlaying resist. The method provides for the formation of a relief image in the top layer using an i-line (365 nm) or deep ultra violet (170 to 300 nm) light source, followed by O.sub.2 RIE transfer of the relief image into the polymeric underlayer.

Abstract: A silicon-containing negative photoresist is used as the top imaging layer in a bilayer substrate patterning scheme. The photoresist is a single component resist in which the photoactive element is chemically bonded to the base polymer. In particular, an aromatic azide containing group is covalently bonded to the phenolic group of the poly(4-hydroxybenzyl)silsesquioxane (PHBS) via an esterification reaction. The new photoresist is easily synthesized and has the advantageous properties of aqueous base developability, excellent O.sub.2 RIE resistance, and high sensitivity to DUV, I-line and E-beam exposures.

Abstract: A method of synthesizing a silicon-containing positive resist for use as a imaging layer in DUV, x-ray, or e-beam lithography is disclosed. The resist contains arylsilsesquioxane polymers with acid sensitive pendant groups as dissolution inhibitors and a photoacid generator.

Abstract: Dry developable top surface imageable photoresist compositions which comprise, in admixture, a film-forming aromatic polymer resin activated to electrophilic substitution, an acid catalyzable agent capable of being inserted into the aromatic polymer resin, and a radiation degradable acid generating compound and processes for generating positive tone resist images on substrates therewith.

Abstract: A method for transferring a pattern through a photoresist layer in the fabrication of submicron semiconductor devices structures is disclosed. A photoresist is provided on a substrate and the same is imagewise exposed with a desired pattern to form exposed and unexposed patterned areas in the top surface of the photoresist. The photoresist is then baked to form cross-linked regions in the exposed pattern areas of the photoresist. Silylation is then performed to incorporate silicon into the unexposed patterned areas of the photoresist, wherein some incorporation of silicon occurs in the exposed patterned crosslinked areas of the photoresist. The patterned photoresist is subsequently etched using a high density, low pressure, anisotropic O.sub.2 plasma alone to produce residue-free images with vertical wall profiles in the photoresist. This method is particularly advantageous with RFI reactive ion etch systems.

Abstract: High sensitivity, high contrast, heat-stable resist compositions for use in deep UV, i-line e-beam and x-ray lithography. These compositions comprise a film-forming polymer having aromatic rings activated for electrophilic substitution, an acid catalyzable crosslinking agent which forms a hydroxy-stabilized carbonium ion, and a photoacid generator. The compositions are aqueous base developable.

Abstract: A protective material for use as an overcoating film for acid catalyzed resist compositions comprising a polymeric film forming compound, the films of which are impermeable to vapors of organic and inorganic bases.

Abstract: A process for making a compliant thermally conductive, preferably dielectric, compound that enhances the power dissipation capability of high-powered electrical components such as bipolar VLSI semiconductor chips. The compound has chemically stable thermal conduction and viscosity properties; is not subject to phase separation during use and may be applied in small gaps to maximize thermal conduction. The compound preferably comprises a liquid carrier having thermal filler particles dispersed therein and a coupling agent having a functionality which is reactive with the calcined surface of the thermal filler particles, and a functionality having preferential wetting of the thermal filler particles over self-condensation. Additional additives such as fumed silica and polyisobutylene enhance the phase stability and resistance to thermo-mechanical shear force degradation of the thermally conductive compound encountered during functional usage, e.g., fluctuating power cycles.

Abstract: New photosensitive polyimide compositions and processes of using the same in the fabrication of electronic components are provided. These compositions are comprised of ##STR1## containing polyamic acids and/or the corresponding hydroxy-polyamic esters, or hydroxypolyimides and a photoactive component as an additive or as covalently bonded functionality on the polymer chain. These compositions provide positive or negative patterning options and may be used as conventional resist materials, as imageable dielectric or passivating layers, as high Tg ion implant masks or as imageable lift-off layers in the fabrication of multilevel metal structures.

Abstract: Viscosity stable, essentially gel-free linear polyamic acids are provided by a process utilizing offset stoichiometry. Polyimides formed from such polyamic acids have low TCE and low dielectric constants.Methods for improved adhesion of polyimides are also disclosed.

Abstract: A compliant thermally conductive, preferably dielectric, compound that enhances the power dissipation capability of high-powered electrical components such as bipolar VLSI semiconductor chips. The compound has chemically stable thermal conduction and viscosity properties; is not subject to phase separation during use and may be applied in small gaps to maximize thermal conduction. The compound preferably comprises a liquid carrier having thermal filler particles dispersed therein and a coupling agent having a functionality which is reactive with the calcined surface of the thermal filler particles, and a functionality having preferential wetting of the thermal filler particles over self-condensation. Additional additives such as fumed silica and polyisobutylene enhance the phase stability and resistance to thermo-mechanical shear force degradation of the thermally conductive compound encountered during functional usage, e.g., fluctuating power cycles.

Abstract: A process for forming a pattern on a substrate utilizing photolithographic techniques. In this process a layer of polymeric material containing a fluorine-containing compound is applied over the substrate and cured. A layer of photoresist material is applied over the polymeric material imagewise exposed and developed to reveal the image on the underlying polymeric material. Thereafter, the photoresist is silylated, and the structure is reactive ion etched to transfer the pattern to the underlying substrate. The fluorine component provides an underlying structure free of residue and cracking.

Abstract: A method of image transfer transfer into a substrate by reactive ion etch technique is provided. A mask layer on said substrate is formed by a spin-on film which film is comprised of a mixed organo-functional zircoaluminate or zircotitanate material. The film is dried and cured, and thereafter coated with a radiation sensitive resist. The reist is imagewise exposed and developed, which developing preferably also removes the pattern in the mask exposing the substrate. The substrate is then reactive ion etched, the remaining film acting as a barrier material to the etching.

Abstract: In a process for forming elements from a slurry that includes particulate ceramic and/or glass, an organic binder resin, and a solvent for the resin, where the element is shaped from the slurry, and the element heated to remove the organic materials of the slurry and subsequently fuse the ceramic and/or glass particles, the improvement comprised of coating the ceramic and/or glass particles prior to forming the slurry with a surface modification compound selected from the group consisting of organo silanes, organo silazanes, titanium chelates, titanium esters, and mixtures thereof.

Abstract: The use of silicon-containing polyimide as an oxygen etch barrier in a metal lift-off process and as an oxygen etch stop in the fabrication of multi-layer metal structures is described. In practice, a lift-off layer is applied on a substrate, followed by a layer of silicon-containing polyimide and a layer of photoresist. The photoresist is lithographically patterned, and the developed image is transferred into the silicon-containing polyimide layer with a reactive ion etch using a CF.sub.4 /O.sub.2 gas mixture. The pattern is transferred to the lift-off layer in a reactive ion etch process using oxygen. Subsequent blanket metal evaporation followed by removal of the lift-off stencil results in the desired metal pattern on the substrate. In an alternate embodiment, the silicon-containing polyimide can be doped with a photoactive compound reducing the need for a separate photoresist imaging layer on the top.

Abstract: A photoresist composition comprised of a radiation scissionable polymeric system having organopolysiloxane segments sensitized by an onium salt is disclosed. Useful organopolysiloxane containing polymers include polysiloxane-polycarbonate block copolymers, and polyorganosiloxane polyaryl esters. The resist films produced from the photoresist compositions exhibit high sensitivity, high thermal stability and resistance to oxygen reactive ion etching which makes them desirable for dry etching processes to enable submicron resolution.

Abstract: Pinhole-free thin films deposited by glow discharge or plasma polymerization of organosilanes, organosilazones and organosiloxanes for use as reactive ion etch oxygen barriers in multilayer resist structures, of lift-off masks, for fabrication of semiconductor devices, such as integrated circuits. The process includes deposition of thin plasma polymerized organosilicon barrier film over a radiation insensitive polymeric base layer previously coated on a substrate, followed by thermal annealing of the plasma polymerized barrier layer, over which is then coated a radiation sensitive resist layer. After definition of the desired resist pattern by imagewise exposure and development, the image is etch transferred into the barrier layer by reactive sputter etching in a fluorine containing ambient, and subsequently transferred into the base layer, down to the substrate, in an oxygen plasma, during which time the plasma deposited film functions as an oxygen barrier.