Abstract: The present invention relates to a process that minimizes the cracking of low-k dielectric polymers. In an example embodiment, on a semiconductor substrate (200), there is a method of forming a composite dielectric disposed on a metal layer passivated with plasma deposited silicon oxide SiOx. The method comprises depositing a first layer of a first predetermined thickness of a spin-on dielectric on the metal layer protected with a plasma deposited silicon oxide SiOx. Next a thin stress relief layer of a second predetermined thickness is disposed on the first layer of spin-on-dielectric. Upon the thin stress-relief layer, a second layer of a third predetermined thickness of spin-on dielectric is deposited. Low-k spin-on dielectrics may include hydrogen silsequioxane (HSQ) and methyl silsequioxane (MSQ).

Abstract: A process for the stoichiometric carbonation of a hydroxyaromatic material is provided which comprises the steps of (a) mixing together in a reaction vessel (1) a hydroxyaromatic material, (2) a sufficient amount of a dialkyl dicarbonate to give the desired degree of substitution, (3) a catalytic amount of an unhindered tertiary amine, and (4) a solvent, (b) stirring the reaction mixture, (c) precipitating the alkyl carbonate of the hydroxyaromatic material, and (d) recovering the alkyl carbonate of the hydroxyaromatic material.