Abstract: A magnetoresistive sensor having an in stack bias structure that extends beyond a stripe height edge defined by the free and pinned layers. The bias structure includes a magnetic bias layer that is magnetostatically coupled with the free layer by a non-magnetic spacer layer. The bias layer is pinned by an AFM layer that is disposed outside of the active area of the sensor beyond the stripe height edge. The AFM layer is exchange coupled with the bias layer on the same side of the bias layer that contacts the spacer layer. This reduces the gap height by moving the AFM layer up within the level of the other sensor layers.

Abstract: A method for enhancing thermal stability, improving biasing and reducing damage from electrical surges in self-pinned abutted junction heads. The method includes forming a free layer, forming first hard bias layers abutting the free layer and forming second hard bias layers over the first hard bias layers discontinguous from the free layer, the second hard bias layers being anti-parallel to the first hard bias layers, the first and second hard bias layers providing a net longitudinal bias on the free layer.

Abstract: A current in plane giant magnetoresistive (GMR) sensor having a hard bias layer that extends along the back edge (strip height) of the sensor rather than from the sides of the sensor. The hard bias layer preferably extends beyond the track width of the sensor. Electrically conductive leads, which may be a highly conductive material such as Cu, Rh or Au, or may be an electrically conductive magnetic material extend from the sides of the sensor stack. The bias layer is separated from the sensor stack and from the leads by thin layer of electrically conductive material, thereby preventing current shunting through the hard bias layer.

Abstract: A current in plane giant magnetoresistive (GMR) sensor having a hard bias layer that extends along the back edge (strip height) of the sensor rather than from the sides of the sensor. The hard bias layer preferably extends beyond the track width of the sensor. Electrically conductive leads, which may be a highly conductive material such as Cu, Rh or Au, or may be an electrically conductive magnetic material extend from the sides of the sensor stack. The bias layer is separated from the sensor stack and from the leads by thin layer of electrically conductive material, thereby preventing current shunting through the hard bias layer.

Abstract: Improved sensitivity GMR sensors useful for thin film magnetic read heads are disclosed. Spin transfer induced destabilization of the magnetic free layer is suppressed through the application of Tb containing alloys in the free layer. Sense currents can be increased by a factor of five in comparison to prior art designs without an increase in spin transfer induced noise.

Abstract: A magnetoresistive sensor having a free layer biased by an in stack bias layer that comprises a layer of antiferromagnetic material. The bias layer can be IrMnCr, IrMn or some other antiferromagnetic material. The free layer is a synthetic free layer having first and second magnetic layers antiparallel coupled across an AP coupling layer. The first magnetic layer is disposed adjacent to a spacer or barrier layer and the second magnetic layer is exchange coupled with the IrMnCr bias layer. The bias layer biases the magnetic moments of the free layer in desired directions parallel with the ABS without pinning the magnetic moments of the free layer.

Abstract: A magnetoresistive sensor having a free layer biased by an in stack bias layer that has a magnetic moment canted with respect to the ABS, such that the magnetic moment of the biasing layer has a longitudinal component in a direction parallel with the ABS and a component in a transverse direction that is perpendicular to the ABS. The transverse component of the bias layer moment creates a balancing field in the free layer that counterbalances the coupling field in the free layer generated by the pinned layer. The counterbalance field provided by the canted moment of the biasing layer is especially useful in a tunnel valve sensor, because the very thin barrier layer of the tunnel valve design generates a strong coupling field in the free layer and this coupling field cannot be offset by a field from the sensor current.

Abstract: A magnetoresistive read element with improved biasing of the free layer is disclosed. The read element includes a free layer, a spacer layer, a first pinned bias layer, an APC layer, and a second pinned bias layer antiparallel exchange coupled with the first pinned bias layer. The second pinned bias layer has a width greater than the width of the first pinned bias layer, while the volumes of the first and second pinned bias layers are substantially similar. The width of the first pinned bias layer allows magnetic fields from the first pinned bias layer to longitudinally bias the free layer. The width of the second pinned bias layer avoids magnetic fields of the second pinned bias layer from biasing the free layer.

Abstract: A magnetic head having a sensor with a free layer, the free layer having a magnetic moment. Hard bias layers are positioned towards opposite track edges of the sensor, the bias layers stabilizing the magnetic moment of the free layer. An antiparallel (AP) pinned layer structure is positioned toward each of the hard bias layers, each AP pinned layer structure having at least two pinned layers with magnetic moments that are self-pinned antiparallel to each other. Each AP pinned layer structure stabilizes a magnetic moment of the hard bias layer closest to it. An antiferromagnetic layer is positioned toward each of the AP pinned layer structures, each antiferromagnetic layer stabilizing a magnetic moment of pinned layer closest to it.

Abstract: A perpendicular write head is disclosed for writing information onto tracks. The write head includes a top pole and a return pole and side shields with laminated layers wherein said laminated layers have magnetization in a direction parallel to an air bearing surface (ABS) and perpendicular to the tracks.

Abstract: A dual current perpendicular to plane (CPP) sensor having an in stack bias structure disposed between first and second free layers. The hard bias structure includes a plurality of magnetic layers antiparallel coupled with one another. At least one of the magnetic layers of the in stack bias structure includes a layer of Ni sandwiched between first and second layer of NiFe. The Ni provides a strong negative magnetostriction that sets the moment of the magnetic layer in a desired direction parallel with the ABS while the NiFe layers at either side of the Ni provide good antiparallel coupling properties, allowing the magnetic layer to be antiparallel coupled with adjacent magnetic layers of the in stack bias structure.

Abstract: A magnetic structure for use in a magnetic recording head, the structure having improved resistance to stray field writing. The magnetic structure can be for example a magnetic shield or a return pole of a perpendicular write element. The structure includes a main body portion which may have a generally rectangular configuration, and first and second wing portions extending laterally from the sides of the body at or near the ABS. The wing portions have a depth measured perpendicular to the ABS that is significantly less than the depth of the body portion (preferably less than 25 percent of the body portion). The wing portions may also have notches formed in their ABS edges. The wings conduct flux from the ABS edge of the body portion and create a flux choking effect for magnetic flux flowing into the wings.

Abstract: A current perpendicular to plane (CPP) having hard magnetic bias layers located at the back of the sensor, opposite the air bearing surface. The bias layer is magnetostatically coupled with the free layer to bias the free layer in a desired direction parallel with the ABS. First and second magnetic shield layers may be provided at either lateral side of the sensor to provide exceptional track width definition. The placement of the bias layer at the back of the sensor makes possible the addition of magnetic shields at the sides of the sensor.

Abstract: A magnetic head that includes a spin valve sensor of the present invention which may be a CIP or CPP device. The sensor includes a free magnetic layer that is comprised of CoFeCu. In certain embodiments the free magnetic layer may also include a sublayer of NiFe. The CoFeCu free magnetic layer preferably includes Fe in a range of 5-20 at. % and Cu in a range of 1-10 at. %. The sensor may also include a cap layer of the present invention that is comprised of ZnOx/TaOx. The CoFeCu free magnetic layer of the present invention provides improved sensor performance characteristics of reduced coercivity and generally similar GMR as compared to the prior art. Where the ZnOx/TaOx cap layer is utilized, increased GMR is obtained. Thus a magnetic head of the present invention that includes both a CoFeCu free magnetic layer and a ZnOx/TaOx cap layer demonstrates reduced coercivity and increased GMR.

Abstract: A magnetic head having an in-stack bias structure and a free layer structure. The in-stack bias structure includes an antiferromagnetic layer, and first through fourth antiparallel (AP) pinned bias layers separated by three AP coupling layers. A first spacer layer is positioned above the fourth bias layer of the bias structure. A free layer is positioned above the first spacer layer. The fourth bias layer magnetostatically stabilizes the free layer.

Abstract: A magnetic head having an in-stack bias structure and a free layer structure. The in-stack bias structure includes an antiferromagnetic layer; a first bias layer positioned towards the antiferromagnetic layer, a magnetic moment of the first bias layer being pinned by the antiferromagnetic layer; a first antiparallel coupling layer positioned adjacent the first bias layer; and a second bias layer positioned between the first and second antiparallel coupling layers and having a magnetic moment pinned antiparallel to the magnetic moment of the first bias layer. A second antiparallel coupling layer is positioned adjacent the second bias layer of the bias structure. The free layer structure, positioned adjacent the antiparallel coupling layer, includes a first free layer having a magnetic moment and a second free layer having a magnetic moment pinned antiparallel to the magnetic moment of the first free layer.

Abstract: A current perpendicular to plane (CPP) sensor having FeN in their free and pinned layers. A tunnel junction sensor (TMR) according to the present invention can have a MgO barrier layer, and a CPP GMR sensor according to the present invention can have a Cr spacer layer.

Abstract: A current perpendicular to plane (CPP) GMR sensor having first and second outer pinned layers and a trilayer free layer therebetween. The free layer includes first and second outer magnetic layers, and a partially oxidized magnetic layer disposed there between. The middle partially oxidized layer is antiparallel coupled with the outer magnetic layers of the free layer by first and second coupling alyers which prevent oxygen migration from the central layer into the outer magnetic layers of the free layer. The partial oxidation of the middle layer provides a limited amount of electrical resistance at a desired location within the free layer to increase GMR.

Abstract: In a CPP magnetic head a free magnetic layer and a magnetic biasing layer are disposed within a central layer stack. To pin the magnetization of the bias layer, an antiferromagnetic (AFM) layer is fabricated on the sides of the central stack. The AFM layer may be comprised of an electrically non-conductive AFM material such as NiO, or, where the AFM material is electrically conductive, such as PtMn or IrMn, a layer of electrical insulation is deposited to prevent the sense current from flowing through the outwardly disposed AFM layer. Portions of the bias layer are deposited upon the outwardly disposed AFM layer, such that the magnetization of the outwardly disposed portions of the bias layer are pinned by the AFM layer, which creates an effective pinning of the central portions of the bias layer. This then provides an effective biasing of the magnetization of the free magnetic layer.

Abstract: A spin valve sensor with a thin antiferromagnetic (AFM) layer exchange coupled to a self-pinned antiparallel coupled bias layer in the lead overlap regions is provided. The spin valve sensor comprises a ferromagnetic bias layer antiparallel coupled to a free layer in first and second passive regions where first and second lead layers overlap the spin valve sensor layers and a thin AFM layer exchange coupled to the bias layer to provide a pinning field to the bias layer.