Abstract: Embodiments disclosed herein generally relate to a magnetic head having a sensor stack and a bias material that is aligned in a direction perpendicular to a media facing surface. The sensor stack and a first portion of the bias material are laterally bookended by synthetic antiferromagnetic (SAF) structures, and a second portion of the bias material is laterally bookended by a dielectric material. In this configuration, the SAF structures are decoupled from the bias material, which minimizes the disturbance to the bias material.

Abstract: A magnetoresistive sensor having employing a Mn containing Huesler alloy for improved magnetoresistive performance in a structure that minimizes corrosion and Mn migration. The sensor can be constructed with a pinned layer structure that includes a lamination of layers of Co2MnX and CoFe, where X is Al, Ge or Si. The Co2MnX can be sandwiched between the layers of CoFe to prevent Mn migration into the spacer/barrier layer. The free layer can also be constructed as a lamination of Co2MnX and CoFe layers, and may also be constructed so that the Co2MnX layer is sandwiched between CoFe layers to prevent Mn migration.

Abstract: A method for enhancing thermal stability, improving biasing and reducing damage from electrical surges in self-pinned abutted junction heads. The method includes forming a free layer, forming first hard bias layers abutting the free layer and forming second hard bias layers over the first hard bias layers discontiguous from the free layer, the second hard bias layers being anti-parallel to the first hard bias layers, the first and second hard bias layers providing a net longitudinal bias on the free layer.

Abstract: A magnetoresistive tunnel junction sensor having improved free layer stability, as well as improved free sensitivity. The free layer is constructed to have a low magnetic coercivity which improves free layer sensitivity. The free layer is also constructed to have a negative magnetostriction which improves free layer stability by preventing the free layer from having an easy axis that is oriented perpendicular to the air bearing surface.

Abstract: A magnetic head having an electrostatic shunt structure for preventing damage to the magnetic head during manufacture. A portion of the shunt structure is removed during manufacture, however another portion remains. In order to prevent the remaining portions of the shunt structure from picking up stray magnetic and electromagnetic fields, an electromagnetic shield, is provided between the remaining portions of the shunt structure and the substrate.

Abstract: A magnetic write head arranged to maximize efficiency of an optical device used to locally heat a magnetic medium during use, also to maximize efficiency of a heater element for thermal fly height control. The magnetic head is constructed with a read head, a write head and a slider body. The write head is located between the read head and the slider body. A heater element can be located between the read head and the write head and an optical device such as an optical waveguide can be located between the write head and the slider body. The write head can be constructed to have a write pole that is closer to the slider body than the return pole is, thereby allowing the write pole to be adjacent to the optical device.

Abstract: A magnetoresisive sensor having a thin seed layer that provides an exceptionally smooth interface between layers of the sensor stack. The exceptionally smooth interface provided by the seed layer reduces interlayer exchange coupling allowing the non-magnetic spacer layer (or barrier layer) to be very thin. The seed layer includes a thin layer of Ru and a thin layer of Si which intermix to form a homogeneous, amorphous thin seed layer of Ru-silicide.

Abstract: A magnetic tunnel transistor (MTT) having a pinned layer that has no antiferromagnetic material in an active area of the sensor. The MTT can include a layer of antiferromagnetic material that is exchange coupled with the pinned layer in an area outside of the active area of me sensor, such as outside the track-width, beyond the stripe height, or both outside the track-width and beyond the stripe height. The pinned layer can also be pinned without any exchange coupling at all. In that case, pinning can be assisted by shape enhanced magnetic anisotropy, by extending the pinned layer beyond the stripe height.

Abstract: A magnetoresistive sensor having a scissor free layer design and no pinned layer. The sensor includes first and second free layers that have magnetizations that are oriented at 90 degrees to one another and has a third magnetic layer with a magnetization that is antiparallel coupled with one of the free layers. The antiparallel coupling of the third magnetic layer with one of the free layers, allows the sensor to be used in a tunnel valve design, having an electrically insulating barrier layer between the free layers. The tunnel valve design reduces spin torque noise in the sensor, and the presence of the third magnetic layer allows the free layers to remain bias at 90 degrees to one another in spite of interfacial coupling through the very thin barrier layer.

Abstract: A magnetoresistive sensor having a greatly reduced read gap. The sensor has a pinned layer structure formed above the free layer. A layer of antiferromagnetic material (AFM layer) is formed over the pinned layer structure and has a front edge disposed toward, but recessed from the air bearing surface. An electrically conductive, magnetic lead is formed over the pinned layer and AFM layer such that the lead fills a space between the AFM layer and the air bearing surface. In this way, the read gap is distance between the outermost portion of the pinned layer structure and free layer. The thickness of the AFM layer and capping layer are not included in the read gap.

Abstract: A magnetic tunnel transistor (MTT) is formed having an emitter that is configured to provide unpolarized electrons. A composite base is configured to provide polarization of the unpolarized electrons injected into the base by the emitter based upon a magnetic orientation of the free layer and the self-pinned layer of the base.

Abstract: A dual current-perpendicular-to-plane scissor sensor according to one embodiment includes a middle free layer; two outer free layers positioned on opposite sides of the middle free layer; spacer layers between the middle free layer and each of the outer free layers; and a hard bias layer positioned behind the free layers relative to a media-facing surface of the sensor, wherein the free layers are about magnetostatically balanced.

Abstract: A differential giant magnetoresistive sensor for sensing a magnetic signal. The differential sensor has a structure configured to minimize spin torque noise. The differential magnetoresistive sensor includes first and second magnetoresistive sensor elements and a three lead structure including an inner lead sandwiched between the first and second sensor elements and first and second outer leads. each of the sensor elements includes an antiparallel coupled free layer structure with the free layer of each of the sensor elements preferably being positioned near the inner lead. The three lead structure allows sense current to be supplied to the sensor such that electrons travel first through the free layer of each sensor element and then through the pinned layer structure.

Abstract: A method and apparatus for providing a magnetic read sensor having a thin pinning layer and improved magnetoresistive coefficient ?R/R is disclosed. A thin IrMn alloy pinning layer is disposed adjacent a composite pinned layer, wherein the percentage of iron in the pinned layer adjacent the thin IrMn alloy pinning layer in the range of 20-40% to provide maximum pinning.

Abstract: A magnetic tunnel transistor (MTT) for a disk drive read head includes a barrier of TiO disposed between a ferromagnetic collector and a ferromagnetic base for preferentially selecting only “hot” electrons for propagation to the collector.

Abstract: A method for manufacturing a magnetoresistive sensor that provides increased magnetoresistive performance. The method includes forming a series of sensor layers with at least one layer containing CoFeB, and having a first capping layer thereover. A high temperature annealing is performed to optimize the grains structure of the sensor layers. The first capping layer is then removed, such as by reactive ion etching (RIE). An antiferromagnetic layer is then deposited followed by a second capping layer. A second annealing is performed to set the magnetization of the pinned layer, the second annealing being performed at a lower temperature than the first annealing.

Abstract: A method and apparatus for providing improved pinning structure for tunneling magnetoresistive sensor is disclosed. A three layer pinned structure is used, wherein the second pinned layer is designed to balance the effects of the first and third pinned layers.

Abstract: A magnetic write head arranged to maximize efficiency of an optical device used to locally heat a magnetic medium during use, also to maximize efficiency of a heater element for thermal fly height control. The magnetic head is constructed with a read head, a write head and a slider body. The write head is located between the read head and the slider body. A heater element can be located between the read head and the write head and an optical device such as an optical waveguide can be located between the write head and the slider body. The write head can be constructed to have a write pole that is closer to the slider body than the return pole is, thereby allowing the write pole to be adjacent to the optical device.

Abstract: A magnetoresistive sensor having a scissor free layer design and no pinned layer. The sensor includes first and second free layers that have magnetizations that are oriented at 90 degrees to one another and has a third magnetic layer with a magnetization that is antiparallel coupled with one of the free layers. The antiparallel coupling of the third magnetic layer with one of the free layers, allows the sensor to be used in a tunnel valve design, having an electrically insulating barrier layer between the free layers. The tunnel valve design reduces spin torque noise in the sensor, and the presence of the third magnetic layer allows the free layers to remain bias at 90 degrees to one another in spite of interfacial coupling through the very thin barrier layer.

Abstract: A method for providing a self-pinned differential GMR sensor and self-pinned differential GMR sensor. The differential GMR head includes two self-pinned GMR sensors separated by a gap layer. The gap layer may act as a bias structure to provide antiparallel magnetizations for the first and second free layers without using an antiferromagnetic layer. The gap layer may include four NiFe ferromagnetic layers separated with three interlayers. The gap may also be formed to include a structure defined by Ta/Al2O3/NiFeCr/CuOx. One of the pinned layer may include three ferromagnetic layers so that the top ferromagnetic layer of the bottom pinned layer and the bottom ferromagnetic layer of the bottom pinned layer have a magnetization 180° out of phase. The self-pinned GMR sensors may include synthetic free layers that includes a first free sublayer, an interlayer and a second free sublayer that are biased 180° out of phase.