Abstract: A CPP sensor includes a free layer which is located between first and second spacer layers and the first and second spacer layers are located between first and second AP pinned layer structures. Each of the AP pinned layer structures has first and second AP pinned layers with the first AP pinned layer of the first AP pinned layer structure interfacing the first spacer layer and the first AP pinned layer of the second AP pinned layer structure interfacing the second spacer layer. The second AP pinned layer of each of the first and second AP pinned layer structures is composed of a material which causes each AP pinned layer structure to be self-pinned. This eliminates the need for first and second antiferromagnetic (AFM) pinning layers so that the gaps of a read head employing the sensor and the resistance of the sensor are reduced to increase the linear read bit density of the read head and the magnetoresistive coefficient of the sensor respectively.