Abstract: A cationic bis-urea compound is disclosed of formula (1): wherein: each m is independently an integer of 0 to 4, each k is independently 0 or 1, each Z? is a monovalent radical independently selected from the group consisting of hydroxyl (*—OH), carboxyl (*—COOH), cyano (*—CN), nitro (*—NO2), sulfonate (*—SO3?), trifluoromethyl (*—CF3), halides, amine groups, ketone groups, alkyl groups comprising 1 to 6 carbons, alkoxy groups comprising 1 to 6 carbons, thioether groups comprising 1 to 6 carbons, and combinations thereof, each L? is independently a divalent alkylene group comprising 1 to 6 carbons, wherein a *-[-L?-]k- is a single bond when k is 0, each Y? is independently a monovalent non-polymeric radical comprising a positive charged amine, and each X? is independently a negative charged counterion.

Abstract: A cationic bis-urea compound is disclosed of formula (1): wherein: each m is independently an integer of 0 to 4, each k is independently 0 or 1, each Z? is a monovalent radical independently selected from the group consisting of hydroxyl (*—OH), carboxyl (*—COOH), cyano (*—CN), nitro (*—NO2), sulfonate (*—SO3?), trifluoromethyl (*—CF3), halides, amine groups, ketone groups, alkyl groups comprising 1 to 6 carbons, alkoxy groups comprising 1 to 6 carbons, thioether groups comprising 1 to 6 carbons, and combinations thereof, each L? is independently a divalent alkylene group comprising 1 to 6 carbons, wherein a *-[-L?-]k- is a single bond when k is 0, each Y? is independently a monovalent non-polymeric radical comprising a positive charged amine, and each X? is independently a negative charged counterion.

Abstract: Carbon transistor devices having channels formed from carbon nanostructures, such as carbon nanotubes or graphene, and having charged monolayers to reduce parasitic resistance in un-gated regions of the channels, and methods for fabricating carbon transistor devices having charged monolayers to reduce parasitic resistance.