Patents by Inventor Hareesh Thridandam
Hareesh Thridandam has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210323907Abstract: Ethylenediamine (EDA) compositions and methods for making the EDA that is suitable for use in thin-film semiconductor processing applications, are disclosed. The EDA is purified to remove water and trace metals. Water levels below about 50 ppm by weight are achieved by passing liquid through 3A type molecular sieve in a packed bed. Metallic impurities are removed by distillation and the resulting product is packaged in specially dried and optionally pre-conditioned containers.Type: ApplicationFiled: June 30, 2021Publication date: October 21, 2021Applicant: VERSUM MATERIALS US.,LLCInventors: HAREESH THRIDANDAM, Stuart H. Dimock, Steven Gerard Mayorga, Ronald Martin Pearlstein
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Publication number: 20180022691Abstract: Ethylenediamine (EDA) compositions and methods for making the EDA that is suitable for use in thin-film semiconductor processing applications, are disclosed. The EDA is purified to remove water and trace metals. Water levels below about 50 ppm by weight are achieved by passing liquid through 3A type molecular sieve in a packed bed. Metallic impurities are removed by distillation and the resulting product is packaged in specially dried and optionally pre-conditioned containers.Type: ApplicationFiled: July 13, 2017Publication date: January 25, 2018Applicant: Versum Materials US, LLCInventors: Hareesh Thridandam, Stuart H. Dimock, Steven Gerard Mayorga, Ronald Martin Pearlstein
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Patent number: 8828505Abstract: The present invention is a process of plasma enhanced cyclic chemical vapor deposition of silicon nitride, silicon carbonitride, silicon oxynitride, silicon carboxynitride, and carbon doped silicon oxide from alkylaminosilanes having Si—H3, preferably of the formula (R1R2N)SiH3 wherein R1 and R2 are selected independently from C2 to C10 and a nitrogen or oxygen source, preferably ammonia or oxygen has been developed to provide films with improved properties such as etching rate, hydrogen concentrations, and stress as compared to films from thermal chemical vapor deposition.Type: GrantFiled: February 27, 2012Date of Patent: September 9, 2014Assignee: Air Products and Chemicals, Inc.Inventors: Hareesh Thridandam, Manchao Xiao, Xinjian Lei, Thomas Richard Gaffney, Eugene Joseph Karwacki, Jr.
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Publication number: 20120171874Abstract: The present invention is a process of plasma enhanced cyclic chemical vapor deposition of silicon nitride, silicon carbonitride, silicon oxynitride, silicon carboxynitride, and carbon doped silicon oxide from alkylaminosilanes having Si—H3, preferably of the formula (R1R2N)SiH3 wherein R1 and R2 are selected independently from C2 to C10 and a nitrogen or oxygen source, preferably ammonia or oxygen has been developed to provide films with improved properties such as etching rate, hydrogen concentrations, and stress as compared to films from thermal chemical vapor deposition.Type: ApplicationFiled: February 27, 2012Publication date: July 5, 2012Applicant: Air Products and Chemicals, Inc.Inventors: Hareesh Thridandam, Manchao Xiao, Xinjian Lei, Thomas Richard Gaffney, Eugene Joseph Karwacki, JR.
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Patent number: 7875312Abstract: The present invention is directed to a method for depositing a silicon oxide layer on a substrate by CVD. The reaction of an organoaminosilane precursor where the alkyl group has at least two carbon atoms in the presence of an oxidizing agent allows for the formation of a silicon oxide film. The organoaminosilanes are represented by the formulas: The use of diisopropylaminosilane is the preferred precursor for the formation of the silicon oxide film.Type: GrantFiled: May 23, 2006Date of Patent: January 25, 2011Assignee: Air Products and Chemicals, Inc.Inventors: Hareesh Thridandam, Manchao Xiao, Xinjian Lei, Thomas Richard Gaffney
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Patent number: 7678422Abstract: A process to deposit metal silicon nitride on a substrate comprising: sorbing a metal amide on a heated substrate, purging away the unsorbed metal amide, contacting a silicon-containing source having one or more Si—H3 fragments with the heated substrate to react with the sorbed metal amide, wherein the silicon-containing source has one or more H3Si—NR02 (R0?SiH3, R, R1 or R2, defined below) groups selected from the group consisting of one or more of: wherein R and R1 in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., branched alkyl, cycloalkyl with R and R1 in formula A also being combinable into a cyclic group, and R2 representing a single bond, (CH2)n, a ring, or SiH2, and purging away the unreacted silicon-containing source.Type: GrantFiled: December 4, 2007Date of Patent: March 16, 2010Assignee: Air Products and Chemicals, Inc.Inventors: Xinjian Lei, Hareesh Thridandam, Manchao Xiao, Heather Regina Bowen, Thomas Richard Gaffney
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Patent number: 7582574Abstract: A method for forming a metal silicate as a high k dielectric in an electronic device, comprising the steps of: providing diethylsilane to a reaction zone; concurrently providing a source of oxygen to the reaction zone; concurrently providing a metal precursor to the reaction zone; reacting the diethylsilane, source of oxygen and metal precursor by chemical vapor deposition to form a metal silicate on a substrate comprising the electronic device. The metal is preferably hafnium, zirconium or mixtures thereof. The dielectric constant of the metal silicate film can be tuned based upon the relative atomic concentration of metal, silicon, and oxygen in the film.Type: GrantFiled: May 10, 2007Date of Patent: September 1, 2009Assignee: Air Products and Chemicals, Inc.Inventors: Robert Daniel Clark, Hareesh Thridandam, Kirk Scott Cuthill, Arthur Kenneth Hochberg
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Publication number: 20080207007Abstract: The present invention is a process of plasma enhanced cyclic chemical vapor deposition of silicon nitride, silicon carbonitride, silicon oxynitride, silicon carboxynitride, and carbon doped silicon oxide from alkylaminosilanes having Si—H3, preferably of the formula (R1R2N)SiH3 wherein R1 and R2 are selected independently from C2 to C10 and a nitrogen or oxygen source, preferably ammonia or oxygen has been developed to provide films with improved properties such as etching rate, hydrogen concentrations, and stess as compared to films from thermal chemical vapor deposition.Type: ApplicationFiled: February 12, 2008Publication date: August 28, 2008Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Hareesh Thridandam, Manchao Xiao, Xinjian Lei, Thomas Richard Gaffney, Eugene Joseph Karwacki
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Publication number: 20080145535Abstract: A process to deposit metal silicon nitride on a substrate comprising: sorbing a metal amide on a heated substrate, purging away the unsorbed metal amide, contacting a silicon-containing source having one or more Si—H3 fragments with the heated substrate to react with the sorbed metal amide, wherein the silicon-containing source has one or more H3Si—NR02(R0?SiH3, R, R1 or R2, defined below) groups selected from the group consisting of one or more of: wherein R and R1 in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., branched alkyl, cycloalkyl with R and R1 in formula A also being combinable into a cyclic group, and R2 representing a single bond, (CH2)n, a ring, or SiH2, and purging away the unreacted silicon-containing source.Type: ApplicationFiled: December 4, 2007Publication date: June 19, 2008Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Xinjian Lei, Hareesh Thridandam, Manchao Xiao, Heather Regina Bowen, Thomas Richard Gaffney
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Publication number: 20080124946Abstract: The present invention discloses a process for depositing a carbon containing silicon oxide film, or a carbon containing silicon nitride film having enhanced etch resistance. The process comprises using a silicon containing precursor, a carbon containing precursor and a chemical modifier. The present invention also discloses a process for depositing a silicon oxide film, or silicon nitride film having enhanced etch resistance comprising using an organosilane precursor and a chemical modifier.Type: ApplicationFiled: November 16, 2007Publication date: May 29, 2008Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: MANCHAO XIAO, HAREESH THRIDANDAM, EUGENE JOSEPH KARWACKI, Xinjian Lei
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Publication number: 20070281475Abstract: A method for forming a metal silicate as a high k dielectric in an electronic device, comprising the steps of: providing diethylsilane to a reaction zone; concurrently providing a source of oxygen to the reaction zone; concurrently providing a metal precursor to the reaction zone; reacting the diethylsilane, source of oxygen and metal precursor by chemical vapor deposition to form a metal silicate on a substrate comprising the electronic device. The metal is preferably hafnium, zirconium or mixtures thereof. The dielectric constant of the metal silicate film can be tuned based upon the relative atomic concentration of metal, silicon, and oxygen in the film.Type: ApplicationFiled: May 10, 2007Publication date: December 6, 2007Inventors: Robert Daniel Clark, Hareesh Thridandam, Kirk Scott Cuthill, Arthur Kenneth Hochberg
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Publication number: 20070275166Abstract: The present invention is directed to a method for depositing a silicon oxide layer on a substrate by CVD. The reaction of an organoaminosilane precursor where the alkyl group has at least two carbon atoms in the presence of an oxidizing agent allows for the formation of a silicon oxide film. The organoaminosilanes are represented by the formulas: The use of diisopropylaminosilane is the preferred precursor for the formation of the silicon oxide film.Type: ApplicationFiled: May 23, 2006Publication date: November 29, 2007Inventors: Hareesh Thridandam, Manchao Xiao, Xinjian Lei, Thomas Richard Gaffney
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Patent number: 7265062Abstract: A process for depositing porous silicon oxide-based films using a sol-gel approach utilizing a precursor solution formulation which includes a purified nonionic surfactant and an additive among other components, where the additive is either an ionic additive or an amine additive which forms an ionic ammonium type salt in the acidic precursor solution. Using this precursor solution formulation enables formation of a film having a dielectric constant less than 2.5, appropriate mechanical properties, and minimal levels of alkali metal impurities. In one embodiment, this is achieved by purifying the surfactant and adding ionic or amine additives such as tetraalkylammonium salts and amines to the stock precursor solution.Type: GrantFiled: August 7, 2003Date of Patent: September 4, 2007Assignees: Applied Materials, Inc., Air Products and Chemicals, Inc.Inventors: Robert P. Mandal, Alexandros T. Demos, Timothy Weidman, Michael P. Nault, Nikolaos Bekiaris, Scott Jeffrey Weigel, Lee A. Senecal, James E. Mac Dougall, Hareesh Thridandam
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Publication number: 20060182885Abstract: This invention relates to an improved process for producing ternary metal silicon nitride films by the cyclic deposition of the precursors. The improvement resides in the use of a metal amide and a silicon source having both NH and SiH functionality as the precursors leading to the formation of such metal-SiN films. The precursors are applied sequentially via cyclic deposition onto the surface of a substrate. Exemplary silicon sources are monoalkylamino silanes and hydrazinosilanes represented by the formulas: (R1NH)nSiR2mH4-n-m (n=1,2; m=0,1,2; n+m=<3); and (R32N—NH)xSiR4yH4-x-y (x=1,2; y=0,1,2; x+y=<3) wherein in the above formula R1-4 are same or different and independently selected from the group consisting of alkyl, vinyl, allyl, phenyl, cyclic alkyl, fluoroalkyl, silylalkyls.Type: ApplicationFiled: February 14, 2005Publication date: August 17, 2006Inventors: Xinjian Lei, Hareesh Thridandam, Kirk Cuthill, Arthur Hochberg
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Patent number: 7064224Abstract: This invention is related to organometallic precursors and deposition processes for fabricating conformal metal containing films on substrates such as silicon, metal nitrides and other metal layers. The organometallic precursors are N,N?-alkyl-1,1-alkylsilylamino metal complexes represented by the formula: wherein M is a metal selected from Group VIIb, VIII, IX and X, and specific examples include cobalt, iron, nickel, manganese, ruthenium, zinc, copper, palladium, platinum, iridium, rhenium, osmium, and the R1-5 can be same or different selected from hydrogen, alkyl, alkoxy, fluoroalkyl and alkoxy, cycloaliphatic, and aryl.Type: GrantFiled: February 4, 2005Date of Patent: June 20, 2006Assignee: Air Products and Chemicals, Inc.Inventors: Xinjian Lei, Manchao Xiao, Hareesh Thridandam, Kirk Scott Cuthill
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Patent number: 6896955Abstract: A process for depositing porous silicon oxide-based films using a sol-gel approach utilizing a precursor solution formulation which includes a purified nonionic surfactant and an additive among other components, where the additive is either an ionic additive or an amine additive which forms an ionic ammonium type salt in the acidic precursor solution. Using this precursor solution formulation enables formation of a film having a dielectric constant less than 2.5, appropriate mechanical properties, and minimal levels of alkali metal impurities. In one embodiment, this is achieved by purifying the surfactant and adding ionic or amine additives such as tetraalkylammonium salts and amines to the stock precursor solution.Type: GrantFiled: August 13, 2002Date of Patent: May 24, 2005Assignees: Air Products & Chemicals, Inc., Applied Materials, Inc.Inventors: Robert P. Mandal, Alexandros T. Demos, Timothy Weidman, Michael P. Nault, Nikolaos Bekiaris, Scott J. Weigel, Lee A. Senecal, James E. MacDougal, Hareesh Thridandam
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Publication number: 20040087184Abstract: A process for depositing porous silicon oxide-based films using a sol-gel approach utilizing a precursor solution formulation which includes a purified nonionic surfactant and an additive among other components, where the additive is either an ionic additive or an amine additive which forms an ionic ammonium type salt in the acidic precursor solution. Using this precursor solution formulation enables formation of a film having a dielectric constant less than 2.5, appropriate mechanical properties, and minimal levels of alkali metal impurities. In one embodiment, this is achieved by purifying the surfactant and adding ionic or amine additives such as tetraalkylammonium salts and amines to the stock precursor solution.Type: ApplicationFiled: August 7, 2003Publication date: May 6, 2004Applicants: APPLIED MATERIALS INC., A Delaware corporation, AIR PRODUCTS AND CHEMICALS INC., A Delaware CorporationInventors: Robert P. Mandal, Alexandros T. Demos, Timothy Weidman, Michael P. Nault, Nikolaos Bekiaris, Scott J. Weigel, Lee A. Senecal, James E. Mac Dougall, Hareesh Thridandam
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Patent number: 6576568Abstract: A process for depositing porous silicon oxide-based films using a sol-gel approach utilizing a precursor solution formulation which includes a purified nonionic surfactant and an additive among other components, where the additive is either an ionic additive or an amine additive which forms an ionic ammonium type salt in the acidic precursor solution. Using this precursor solution formulation enables formation of a film having a dielectric constant less than 2.5, appropriate mechanical properties, and minimal levels of alkali metal impurities. In one embodiment, this is achieved by purifying the surfactant and adding ionic or amine additives such as tetraalkylammonium salts and amines to the stock precursor solution.Type: GrantFiled: March 29, 2001Date of Patent: June 10, 2003Assignees: Applied Materials, Inc., Air Products and Chemicals, Inc.Inventors: Robert P Mandal, Alexandros T Demos, Timothy Weidman, Michael P Nault, Nikolaos Bekiaris, Scott J Weigel, Lee A. Senecal, James E. MacDougall, Hareesh Thridandam
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Publication number: 20030008525Abstract: A process for depositing porous silicon oxide-based films using a sol-gel approach utilizing a precursor solution formulation which includes a purified nonionic surfactant and an additive among other components, where the additive is either an ionic additive or an amine additive which forms an ionic ammonium type salt in the acidic precursor solution. Using this precursor solution formulation enables formation of a film having a dielectric constant less than 2.5, appropriate mechanical properties, and minimal levels of alkali metal impurities. In one embodiment, this is achieved by purifying the surfactant and adding ionic or amine additives such as tetraalkylammonium salts and amines to the stock precursor solution.Type: ApplicationFiled: August 13, 2002Publication date: January 9, 2003Applicant: APPLIED MATERIALS INC.Inventors: Robert P. Mandal, Alexandros T. Demos, Timothy Weidman, Michael P. Nault, Nikolaos Bekiaris, Scott J. Weigel, Lee A. Senecal, James E. Mac Dougall, Hareesh Thridandam
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Publication number: 20020042210Abstract: A process for depositing porous silicon oxide-based films using a sol-gel approach utilizing a precursor solution formulation which includes a purified nonionic surfactant and an additive among other components, where the additive is either an ionic additive or an amine additive which forms an ionic ammonium type salt in the acidic precursor solution. Using this precursor solution formulation enables formation of a film having a dielectric constant less than 2.5, appropriate mechanical properties, and minimal levels of alkali metal impurities. In one embodiment, this is achieved by purifying the surfactant and adding ionic or amine additives such as tetraalkylammonium salts and amines to the stock precursor solution.Type: ApplicationFiled: March 29, 2001Publication date: April 11, 2002Inventors: Robert P. Mandal, Alexandros T. Demos, Timothy Weidman, Michael P. Nault, Nikolaos Bekiaris, Scott J. Weigel, Lee A. Senecal, James E. MacDougall, Hareesh Thridandam