Abstract: An ion system for use in an etching system for etching at least a wafer using a gas. The ion system may include an ion chamber for containing charged particles generated from the gas. The ion system may also include a magnetic device surrounding at least a portion of the ion chamber. The magnetic device may affect the distribution of the charged particles in the ion chamber. The ion system may also include a grid assembly disposed between the ion chamber and the wafer when the wafer is etched. The charged particles may be provided through the grid assembly to etch the wafer when the wafer is etched.

Abstract: A grid assembly for use in an etching system for etching at least a wafer. The grid assembly may include a first grid member, a second grid member, and a third grid member. When the grid assembly is used in etching the wafer, the first grid member may be electrically grounded, the second grid member may be electrically negative relative to the first grid member, and the third grid member may be electrically positive relative to the first grid member. The second grid member may be disposed between the first grid member and the third grid member. The first grid member may be thicker than at least one of the second grid member and the third grid member.

Abstract: A system for depositing material on a substrate using plasma and a target. The target may include the material and/or a second material. The system may include a plasma source for providing the plasma. The system may also include a chamber for containing the substrate, the plasma, and the target during deposition of the material on the substrate. The system may also include a first magnet disposed above the chamber or disposed below the chamber for influencing distribution of the plasma inside the chamber. At least one of a bottom surface of the magnet and a top surface of the magnet is at an angle with respect to an imaginary axis of the plasma source. A circular cross section of the plasma source is symmetrical with respect to the imaginary axis of the plasma source. The angle is greater than 0 degree and less than 90 degrees.

Abstract: A charged particle source utilizes a novel plasma processing chamber, RF coil and ion optics, to achieve high uniformity. The plasma processing chamber has a re-entrant vessel which is movable, and which includes extensions of adjustable shape or position, to make more uniform the plasma contained within the chamber. One or more magnets, which may be static or moving, may be included within the re-entrant vessel. The ion optics include a grid with a number of apertures, and tuning features each surrounding an aperture. These tuning features either reduce the diameter of the associated aperture, or increase the length of that aperture, to create more uniform beamlets emerging from the grid. The RF coil includes a flux concentrator positioned adjacent to the winding in at least one angular region thereof to tune the magnetic field produced thereby.

Abstract: A charged particle source utilizes a novel plasma processing chamber, RF coil and ion optics, to achieve high uniformity. The plasma processing chamber has a re-entrant vessel which is movable, and which includes extensions of adjustable shape or position, to make more uniform the plasma contained within the chamber. One or more magnets, which may be static or moving, may be included within the re-entrant vessel. The ion optics include a grid with a number of apertures, and tuning features each surrounding an aperture. These tuning features either reduce the diameter of the associated aperture, or increase the length of that aperture, to create more uniform beamlets emerging from the grid. The RF coil includes a flux concentrator positioned adjacent to the winding in at least one angular region thereof to tune the magnetic field produced thereby.

Abstract: This invention is directed to methods for depositing multilayered thin films onto substrates, for example in making thin film magnetic heads. In accordance with the invention a first film, such as Cr, is deposited onto the substrate at a first pressure and a second layer, such as CoCrPt is deposited at a second pressure.

Abstract: This invention is directed to methods for depositing multilayered thin films onto substrates, for example in making thin film magnetic heads. In accordance with the invention a first film, such as Cr, is deposited onto the substrate at a first angle and a second layer, such as CoCrPt is deposited at a second angle.