Patents by Inventor Hari PATHANGI

Hari PATHANGI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Inspection-guided critical site selection for critical dimension measurement
    Patent number: 11035666
    Abstract: Systems and methods for determining location of critical dimension (CD) measurement or inspection are disclosed. Real-time selection of locations to take critical dimension measurements based on potential impact of critical dimension variations at the locations can be performed. The design of a semiconductor device also can be used to predict locations that may be impacted by critical dimension variations. Based on an ordered location list, which can include ranking or criticality, critical dimension can be measured at selected locations. Results can be used to refine a critical dimension location prediction model.
    Type: Grant
    Filed: February 25, 2018
    Date of Patent: June 15, 2021
    Assignee: KLA-Tencor Corporation
    Inventors: Jagdish Chandra Saraswatula, Arpit Yati, Hari Pathangi
  • Using deep learning based defect detection and classification schemes for pixel level image quantification
    Patent number: 10672588
    Abstract: A heat map of probable defects in an image can be represented as a matrix of defect probability index corresponding to each pixel. The image may be generated from data received from a detector of a scanning electron microscope or other inspection tools. A number of pixels in the image that exceed a corresponding threshold in the matrix can be quantified.
    Type: Grant
    Filed: January 16, 2019
    Date of Patent: June 2, 2020
    Assignee: KLA-Tencor Corporation
    Inventors: Hari Pathangi, Sivaprrasath Meenakshisundaram, Tanay Bansal
  • USING DEEP LEARNING BASED DEFECT DETECTION AND CLASSIFICATION SCHEMES FOR PIXEL LEVEL IMAGE QUANTIFICATION
    Publication number: 20200161081
    Abstract: A heat map of probable defects in an image can be represented as a matrix of defect probability index corresponding to each pixel. The image may be generated from data received from a detector of a scanning electron microscope or other inspection tools. A number of pixels in the image that exceed a corresponding threshold in the matrix can be quantified.
    Type: Application
    Filed: January 16, 2019
    Publication date: May 21, 2020
    Inventors: Hari Pathangi, Sivaprrasath Meenakshisundaram, Tanay Bansal
  • Overlay measurements of overlapping target structures based on symmetry of scanning electron beam signals
    Patent number: 10473460
    Abstract: An overlay metrology system includes a particle-beam metrology tool to scan a particle beam across an overlay target on a sample including a first-layer target element and a second-layer target element. The overlay metrology system may further include a controller to receive a scan signal from the particle-beam metrology tool, determine symmetry measurements for the scan signal with respect to symmetry metrics, and generate an overlay measurement between the first layer and the second layer based on the symmetry measurements in which an asymmetry of the scan signal is indicative of a misalignment of the second-layer target element with respect to the first-layer target element and a value of the overlay measurement is based on the symmetry measurements.
    Type: Grant
    Filed: May 14, 2018
    Date of Patent: November 12, 2019
    Assignee: KLA-Tencor Corporation
    Inventors: Nadav Gutman, Eran Amit, Stefan Eyring, Hari Pathangi, Frank Laske, Ulrich Pohlmann, Thomas Heidrich
  • Overlay Measurements of Overlapping Target Structures Based on Symmetry of Scanning Electron Beam Signals
    Publication number: 20190178639
    Abstract: An overlay metrology system includes a particle-beam metrology tool to scan a particle beam across an overlay target on a sample including a first-layer target element and a second-layer target element. The overlay metrology system may further include a controller to receive a scan signal from the particle-beam metrology tool, determine symmetry measurements for the scan signal with respect to symmetry metrics, and generate an overlay measurement between the first layer and the second layer based on the symmetry measurements in which an asymmetry of the scan signal is indicative of a misalignment of the second-layer target element with respect to the first-layer target element and a value of the overlay measurement is based on the symmetry measurements.
    Type: Application
    Filed: May 14, 2018
    Publication date: June 13, 2019
    Inventors: Nadav Gutman, Eran Amit, Stefan Eyring, Hari Pathangi, Frank Laske, Ulrich Pohlmann, Thomas Heidrich
  • INSPECTION-GUIDED CRITICAL SITE SELECTION FOR CRITICAL DIMENSION MEASUREMENT
    Publication number: 20190041202
    Abstract: Systems and methods for determining location of critical dimension (CD) measurement or inspection are disclosed. Real-time selection of locations to take critical dimension measurements based on potential impact of critical dimension variations at the locations can be performed. The design of a semiconductor device also can be used to predict locations that may be impacted by critical dimension variations. Based on an ordered location list, which can include ranking or criticality, critical dimension can be measured at selected locations. Results can be used to refine a critical dimension location prediction model.
    Type: Application
    Filed: February 25, 2018
    Publication date: February 7, 2019
    Inventors: Jagdish Chandra SARASWATULA, Arpit YATI, Hari PATHANGI