Patents by Inventor Hari Ponnekanti
Hari Ponnekanti has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11948783Abstract: Apparatus and methods to process a substrate comprising a gas distribution assembly comprising a plasma process region with an array of individual plasma sources. A controller is connected to the array of individual plasma sources and the substrate support. The controller is configured monitor the position of the at least one substrate and provide or disable power to the individual plasma sources based on the position of the substrate relative to the individual plasma sources.Type: GrantFiled: November 15, 2017Date of Patent: April 2, 2024Assignee: APPLIED MATERIALS, INC.Inventors: Hari Ponnekanti, Mukund Srinivasan
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Patent number: 11923172Abstract: Processing chambers with a plurality of processing stations and individual wafer support surfaces are described. The processing stations and wafer support surfaces are arranged so that there is an equal number of processing stations and heaters. An RF generator is connected to a first electrode in a first station and a second electrode in a second station. A bottom RF path is formed by a connection between a first support surface and a second support surface.Type: GrantFiled: February 8, 2022Date of Patent: March 5, 2024Assignee: APPLIED MATERIALS, INC.Inventors: Hari Ponnekanti, Tsutomu Tanaka, Mandyam Sriram, Dmitry A. Dzilno, Sanjeev Baluja, Mario D. Silvetti
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Patent number: 11713508Abstract: Processing chambers and methods to disrupt the boundary layer are described. The processing chamber includes a showerhead and a substrate support therein. The showerhead and the substrate support are spaced to have a process gap between them. In use, a boundary layer is formed adjacent to the substrate support or wafer surface. As the reaction occurs at the wafer surface, reaction products and byproduct are produced, resulting in reduced chemical utilization rate. The processing chamber and methods described disrupt the boundary layer by changing one or more process parameters (e.g., pressure, flow rate, time, process gap or temperature of fluid passing through the showerhead).Type: GrantFiled: June 21, 2022Date of Patent: August 1, 2023Assignee: Applied Materials, Inc.Inventors: Kevin Griffin, Sanjeev Baluja, Joseph AuBuchon, Mario D. Silvetti, Hari Ponnekanti
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Patent number: 11631583Abstract: Methods of depositing a film using a plasma enhanced process are described. The method comprises providing continuous power from a power source connected to a microwave plasma source in a process chamber and a dummy load, the continuous power split into pulses having a first time and a second time defining a duty cycle of a pulse. The continuous power is directed to the microwave plasma source during the first time, and the continuous power is directed to the dummy load during the second time.Type: GrantFiled: October 21, 2020Date of Patent: April 18, 2023Assignee: Applied Materials, Inc.Inventors: Farhad Moghadam, Hari Ponnekanti, Dmitry A. Dzilno
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Publication number: 20220316061Abstract: Processing chambers and methods to disrupt the boundary layer are described. The processing chamber includes a showerhead and a substrate support therein. The showerhead and the substrate support are spaced to have a process gap between them. In use, a boundary layer is formed adjacent to the substrate support or wafer surface. As the reaction occurs at the wafer surface, reaction products and byproduct are produced, resulting in reduced chemical utilization rate. The processing chamber and methods described disrupt the boundary layer by changing one or more process parameters (e.g., pressure, flow rate, time, process gap or temperature of fluid passing through the showerhead).Type: ApplicationFiled: June 21, 2022Publication date: October 6, 2022Applicant: Applied Materials, Inc.Inventors: Kevin Griffin, Sanjeev Baluja, Joseph AuBuchon, Mario D. Silvetti, Hari Ponnekanti
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Patent number: 11396703Abstract: Processing chambers and methods to disrupt the boundary layer are described. The processing chamber includes a showerhead and a substrate support therein. The showerhead and the substrate support are spaced to have a process gap between them. In use, a boundary layer is formed adjacent to the substrate support or wafer surface. As the reaction occurs at the wafer surface, reaction products and byproduct are produced, resulting in reduced chemical utilization rate. The processing chamber and methods described disrupt the boundary layer by changing one or more process parameters (e.g., pressure, flow rate, time, process gap or temperature of fluid passing through the showerhead).Type: GrantFiled: December 21, 2020Date of Patent: July 26, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Kevin Griffin, Sanjeev Baluja, Joseph AuBuchon, Mario D. Silvetti, Hari Ponnekanti
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Publication number: 20220195600Abstract: Processing chambers and methods to disrupt the boundary layer are described. The processing chamber includes a showerhead and a substrate support therein. The showerhead and the substrate support are spaced to have a process gap between them. In use, a boundary layer is formed adjacent to the substrate support or wafer surface. As the reaction occurs at the wafer surface, reaction products and byproduct are produced, resulting in reduced chemical utilization rate. The processing chamber and methods described disrupt the boundary layer by changing one or more process parameters (e.g., pressure, flow rate, time, process gap or temperature of fluid passing through the showerhead).Type: ApplicationFiled: December 21, 2020Publication date: June 23, 2022Applicant: Applied Materials, Inc.Inventors: Kevin Griffin, Sanjeev Baluja, Joseph AuBuchon, Mario D. Silvetti, Hari Ponnekanti
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Publication number: 20220165540Abstract: Processing chambers with a plurality of processing stations and individual wafer support surfaces are described. The processing stations and wafer support surfaces are arranged so that there is an equal number of processing stations and heaters. An RF generator is connected to a first electrode in a first station and a second electrode in a second station. A bottom RF path is formed by a connection between a first support surface and a second support surface.Type: ApplicationFiled: February 8, 2022Publication date: May 26, 2022Applicant: Applied Materials, Inc.Inventors: Hari Ponnekanti, Tsutomu Tanaka, Mandyam Sriram, Dmitry A. Dzilno, Sanjeev Baluja, Mario D. Silvetti
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Patent number: 11282676Abstract: Processing chambers with a plurality of processing stations and individual wafer support surfaces are described. The processing stations and wafer support surfaces are arranged so that there is an equal number of processing stations and heaters. An RF generator is connected to a first electrode in a first station and a second electrode in a second station. A bottom RF path is formed by a connection between the a first support surface and a second support surface.Type: GrantFiled: June 18, 2019Date of Patent: March 22, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Hari Ponnekanti, Tsutomu Tanaka, Mandyam Sriram, Dmitry A. Dzilno, Sanjeev Baluja, Mario D. Silvetti
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Publication number: 20210125820Abstract: Methods of depositing a film using a plasma enhanced process are described. The method comprises providing continuous power from a power source connected to a microwave plasma source in a process chamber and a dummy load, the continuous power split into pulses having a first time and a second time defining a duty cycle of a pulse. The continuous power is directed to the microwave plasma source during the first time, and the continuous power is directed to the dummy load during the second time.Type: ApplicationFiled: October 21, 2020Publication date: April 29, 2021Applicant: Applied Materials, Inc.Inventors: Farhad Moghadam, Hari Ponnekanti, Dmitry A. Dzilno
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Publication number: 20200256228Abstract: Exhaust systems for handling multiple effluent streams are described. Some embodiments include pressure drops to prevent perturbations from one effluent source from affecting a second effluent source. Some embodiments incorporate an exhaust assembly with multiple inlets and pumps and a single outlet. The exhaust assembly includes shared auxiliary components like purge and cooling systems.Type: ApplicationFiled: February 13, 2020Publication date: August 13, 2020Applicant: Applied Materials, Inc.Inventors: Michael Rice, Sanjeev Baluja, Joseph AuBuchon, Hari Ponnekanti, Mario D. Silvetti, Kevin Griffin
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Publication number: 20190385819Abstract: Processing chambers with a plurality of processing stations and individual wafer support surfaces are described. The processing stations and wafer support surfaces are arranged so that there is an equal number of processing stations and heaters. An RF generator is connected to a first electrode in a first station and a second electrode in a second station. A bottom RF path is formed by a connection between the a first support surface and a second support surface.Type: ApplicationFiled: June 18, 2019Publication date: December 19, 2019Inventors: Hari Ponnekanti, Tsutomu Tanaka, Mandyam Sriram, Dmitry A. Dzilno, Sanjeev Baluja, Mario D. Silvetti
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Publication number: 20180155834Abstract: Processing platforms having a central transfer station with a robot, a first batch processing chamber connected to a first side of the central transfer station and a first single wafer processing chamber connected to a second side of the central transfer station, where the first batch processing chamber configured to process x wafers at a time for a batch time and the first single wafer processing chamber configured to process a wafer for about 1/x of the batch time. Methods of using the processing platforms and processing a plurality of wafers are also described.Type: ApplicationFiled: November 30, 2017Publication date: June 7, 2018Inventors: Mukund Srinivasan, Hari Ponnekanti, Joseph Yudovsky, Alexander S. Polyak
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Publication number: 20180138023Abstract: Apparatus and methods to process a substrate comprising a gas distribution assembly comprising a plasma process region with an array of individual plasma sources. A controller is connected to the array of individual plasma sources and the substrate support. The controller is configured monitor the position of the at least one substrate and provide or disable power to the individual plasma sources based on the position of the substrate relative to the individual plasma sources.Type: ApplicationFiled: November 15, 2017Publication date: May 17, 2018Inventors: Hari Ponnekanti, Mukund Srinivasan
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Patent number: 8900427Abstract: A magnetron actuator for moving a magnetron in a nearly arbitrary radial and azimuthal path in the back of a target in a plasma sputter reactor. The magnetron includes two coaxial rotary shafts extending along the chamber central axis and coupled to two independently controllable rotary actuators. An epicyclic gear mechanism or a frog-leg structure mechanically couple the shafts to the magnetron to control its radial and azimuthal position. A vertical actuator moves the shafts vertically in tandem to vary the magnetron's separation from the target's back surface and compensate for erosion of the front surface. The rotary actuators may be separately coupled to the shafts or a rotatable ring gear may be coupled to the shafts through respectively fixed and orbiting idler gears. Two radially spaced sensors detect reflectors attached to the inner and outer arms of the epicyclic gear mechanism for homing of the controller.Type: GrantFiled: August 19, 2011Date of Patent: December 2, 2014Assignee: Applied Materials, Inc.Inventors: Keith A. Miller, Michael Allen Flanigan, Hari Ponnekanti
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Patent number: 8390980Abstract: Embodiments of the present invention provide a cost effective electrostatic chuck assembly capable of operating over a wide temperature range in an ultra-high vacuum environment while minimizing thermo-mechanical stresses within the electrostatic chuck assembly. In one embodiment, the electrostatic chuck assembly includes a dielectric body having chucking electrodes which comprise a metal matrix composite material with a coefficient of thermal expansion (CTE) that is matched to the CTE of the dielectric body.Type: GrantFiled: August 11, 2009Date of Patent: March 5, 2013Assignee: Applied Materials, Inc.Inventors: Steven V. Sansoni, Cheng-Hsiung Tsai, Shambhu N. Roy, Karl M. Brown, Vijay D. Parkhe, Hari Ponnekanti
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Patent number: 8129212Abstract: Methods for surface texturing a crystalline silicon substrate are provided. In one embodiment, the method includes providing a crystalline silicon substrate, wetting the substrate with an alkaline solution comprising a wetting agent, and forming a textured surface with a structure having a depth about 1 ?m to about 10 ?m on the substrate. In another embodiment, a method of performing a substrate texture process includes providing crystalline silicon substrate, pre-cleaning the substrate in a HF aqueous solution, wetting the substrate with a KOH aqueous solution comprising polyethylene glycol (PEG) compound, and forming a textured surface with a structure having a depth about 3 ?m to about 8 ?m on the substrate.Type: GrantFiled: March 23, 2009Date of Patent: March 6, 2012Assignee: Applied Materials, Inc.Inventors: Kapila Wijekoon, Rohit Mishra, Michael P Stewart, Timothy Weidman, Hari Ponnekanti, Tristan R. Holtam
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Publication number: 20110297538Abstract: A magnetron actuator for moving a magnetron in a nearly arbitrary radial and azimuthal path in the back of a target in a plasma sputter reactor. The magnetron includes two coaxial rotary shafts extending along the chamber central axis and coupled to two independently controllable rotary actuators. An epicyclic gear mechanism or a frog-leg structure mechanically couple the shafts to the magnetron to control its radial and azimuthal position. A vertical actuator moves the shafts vertically in tandem to vary the magnetron's separation from the target's back surface and compensate for erosion of the front surface. The rotary actuators may be separately coupled to the shafts or a rotatable ring gear may be coupled to the shafts through respectively fixed and orbiting idler gears. Two radially spaced sensors detect reflectors attached to the inner and outer arms of the epicyclic gear mechanism for homing of the controller.Type: ApplicationFiled: August 19, 2011Publication date: December 8, 2011Applicant: APPLIED MATERIAL;S, INC.Inventors: Keith A. Miller, Michael Allen Flanigan, Hari Ponnekanti
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Publication number: 20110272625Abstract: Methods for surface texturing a crystalline silicon substrate are provided. In one embodiment, the method includes providing a crystalline silicon substrate, wetting the substrate with an alkaline solution comprising a wetting agent, and forming a textured surface with a structure having a depth about 1 ?m to about 10 ?m on the substrate. In another embodiment, a method of performing a substrate texture process includes providing crystalline silicon substrate, pre-cleaning the substrate in a HF aqueous solution, wetting the substrate with a KOH aqueous solution comprising polyethylene glycol (PEG) compound, and forming a textured surface with a structure having a depth about 3 ?m to about 8 ?m on the substrate.Type: ApplicationFiled: July 13, 2011Publication date: November 10, 2011Inventors: Kapila Wijekoon, Rohit Mishra, Michael P. Stewart, Timothy Weidman, Hari Ponnekanti, Tristan R. Holtam
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Patent number: 8021527Abstract: A magnetron actuator for moving a magnetron in a nearly arbitrary radial and azimuthal path in the back of a target in a plasma sputter reactor. The magnetron includes two coaxial rotary shafts extending along the chamber central axis and coupled to two independently controllable rotary actuators. An epicyclic gear mechanism or a frog-leg structure mechanically couple the shafts to the magnetron to control its radial and azimuthal position. A vertical actuator moves the shafts vertically in tandem to vary the magnetron's separation from the target's back surface and compensate for erosion of the front surface. The rotary actuators may be separately coupled to the shafts or a rotatable ring gear may be coupled to the shafts through respectively fixed and orbiting idler gears. Two radially spaced sensors detect reflectors attached to the inner and outer arms of the epicyclic gear mechanism for homing of the controller.Type: GrantFiled: October 25, 2007Date of Patent: September 20, 2011Assignee: Applied Materials, Inc.Inventors: Keith A. Miller, Michael Allen Flanigan, Hari Ponnekanti