Abstract: The present disclosure includes apparatuses and methods related to selectively performing logical operations. An example apparatus comprises sensing circuitry including a sense amplifier and a compute component. A controller is coupled to sensing circuitry and is configured to cause storing of an indication of whether a logical operation is to be selectively performed between an operand stored in the sensing circuitry and an operand stored in the sense amplifier.

Abstract: The present disclosure includes apparatuses and methods related to performing logic operations. An example apparatus comprises sensing circuitry including a sense amplifier and a compute component. A controller is coupled to the sensing circuitry and is configured to cause storing of a first operand in a first compute component storage location, transfer of the first operand to a second compute component storage location, and performance of a logical operation between the first operand in the second compute component storage location and a second operand sensed by the sense amplifier.

Abstract: The present disclosure includes apparatuses and methods related to storing a data value in a sensing circuitry element. An example method comprises sensing a first data value with a sense amplifier of a sensing circuitry element, moving a second data value from a first storage location of a compute component to a second storage location of the compute component, and storing, in the first storage location, a third data value resulting from a logical operation performed on the first data value and the second data value. The logical operation can be performed by logic circuitry of the sensing circuitry element.

Abstract: The present disclosure includes apparatuses and methods related to shifting data. An example apparatus comprises sensing circuitry including a sense amplifier and a compute component having a first storage location and a second storage location associated therewith. A controller is coupled to the sensing circuitry. The controller is configured to control an amount of power associated with shifting a data value stored in the first storage location to the second storage location by applying a charge sharing operation.

Abstract: The present disclosure includes apparatuses and methods related to selectively performing logical operations. An example apparatus comprises sensing circuitry including a sense amplifier and a compute component. A controller is coupled to sensing circuitry and is configured to cause storing of an indication of whether a logical operation is to be selectively performed between an operand stored in the sensing circuitry and an operand stored in the sense amplifier.

Abstract: The present disclosure includes apparatuses and methods related to storing a data value in a sensing circuitry element. An example method comprises sensing a first data value with a sense amplifier of a sensing circuitry element, moving a second data value from a first storage location of a compute component to a second storage location of the compute component, and storing, in the first storage location, a third data value resulting from a logical operation performed on the first data value and the second data value. The logical operation can be performed by logic circuitry of the sensing circuitry element.

Abstract: Apparatuses and methods of providing word line voltages include an example apparatus including a voltage driver and a word line driver. The voltage driver is configured to provide a word line voltage, wherein the word line voltage is a pumped supply voltage responsive to an active mode and the word line voltage is a non-zero voltage less than the pumped supply voltage during a standby mode. The word line driver is coupled to the voltage driver and is configured to drive a respective word line to the word line voltage during the active and standby modes.

Abstract: Apparatuses and methods related to memory arrays with separate global read and write lines and/or sense amplifier region column select lines are disclosed. An example apparatus includes first and second memory sections, and further includes a sense amplifier region. A memory section includes a word line extending in a first direction and a digit line extending in a second direction, and the sense amplifier region is disposed between the first and second memory sections. The sense amplifier region includes a sense amplifier coupled to the digit line, a local input/output (LIO) line, a column select circuit coupled to the sense amplifier, and a column select line. The column select line extends in the first direction and is configured to provide a column select signal to the column select circuit. Capacitance of a LIO line may be reduced by coupling fewer sense amplifiers of a group to the LIO line.

Abstract: Apparatuses and methods for memory arrays with separate global read and write lines and/or sense amplifier region column select lines are disclosed. An example apparatus includes first and second memory sections, and further includes a sense amplifier region. A memory section includes a word line extending in a first direction and a digit line extending in a second direction, and the sense amplifier region is disposed between the first and second memory sections. The sense amplifier region includes a sense amplifier coupled to the digit line, a local input/output (LIO) line, a column select circuit coupled to the sense amplifier, and a column select line. The column select line extends in the first direction and is configured to provide a column select signal to the column select circuit. Capacitance of a LIO line may be reduced by coupling fewer sense amplifiers of a group to the LIO line.

Abstract: Methods and apparatuses for adjusting data strobe signals are disclosed. An example apparatus may include a control circuit that is configured to receive an address and a strobe signal. The control circuit may further be configured to delay the strobe signal based, at least in part on the address to provide a delayed strobe signal. The example apparatus may further include a sense amplification circuit coupled to the control circuit. The sense amplification circuit may be configured to sense signals responsive, at least in part, to receipt of the delayed strobe signal.

Abstract: Apparatuses and methods related to memory arrays with separate global read and write lines and/or sense amplifier region column select lines are disclosed. An example apparatus includes first and second memory sections, and further includes a sense amplifier region. A memory section includes a word line extending in a first direction and a digit line extending in a second direction, and the sense amplifier region is disposed between the first and second memory sections. The sense amplifier region includes a sense amplifier coupled to the digit line, a local input/output (LIO) line, a column select circuit coupled to the sense amplifier, and a column select line. The column select line extends in the first direction and is configured to provide a column select signal to the column select circuit. Capacitance of a LIO line may be reduced by coupling fewer sense amplifiers of a group to the LIO line.

Abstract: Methods and apparatuses for adjusting data strobe signals are disclosed. An example apparatus may include a control circuit that is configured to receive an address and a strobe signal. The control circuit may further be configured to delay the strobe signal based, at least in part on the address to provide a delayed strobe signal. The example apparatus may further include a sense amplification circuit coupled to the control circuit. The sense amplification circuit may be configured to sense signals responsive, at least in part, to receipt of the delayed strobe signal.

Abstract: Apparatuses and methods of providing word line voltages are disclosed. An example apparatus includes a voltage driver and a word line driver. The voltage driver is configured to provide a word line voltage, wherein the word line voltage is a pumped supply voltage responsive to an active mode and the word line voltage is a non-zero voltage less than the pumped supply voltage during a standby mode. The word line driver is coupled to the voltage driver and is configured to drive a respective word line to the word line voltage during the active and standby modes.

Abstract: An apparatus and method for reducing power consumption in digital circuits, particularly circuits including a charge pump. A driver may selectively drive a signal line, such as a memory device wordline, between a first voltage, which may be a voltage generated by the charge pump, and a different second voltage. A coupling circuit may be coupled between the signal line and the charge pump to selectively couple the signal line to the charge pump responsive to the signal line being driven from the first voltage to the second voltage. For example, the first voltage may be a voltage generated by the charge pump, and the second voltage may be a voltage having a lesser magnitude. As a result, the voltage on the signal line may be discharged into the charge pump when the voltage of the signal line transitions from the first voltage to the second voltage.

Abstract: An apparatus and method for reducing power consumption in digital circuits, particularly circuits including a charge pump. A driver may selectively drive a signal line, such as a memory device wordline, between a first voltage, which may be a voltage generated by the charge pump, and a different second voltage. A coupling circuit may be coupled between the signal line and the charge pump to selectively couple the signal line to the charge pump responsive to the signal line being driven from the first voltage to the second voltage. For example, the first voltage may be a voltage generated by the charge pump, and the second voltage may be a voltage having a lesser magnitude. As a result, the voltage on the signal line may be discharged into the charge pump when the voltage of the signal line transitions from the first voltage to the second voltage.