Abstract: A method for managing a flash storage system includes measuring an operation time to complete a data operation on a flash memory block of a flash memory device of the flash storage system. The method includes updating, based on the measured operation time, a running average time for the flash memory device to complete the data operation. The method includes comparing the updated running average time to a threshold time. The method includes adjusting an operating parameter for the flash memory device to perform the data operation based on the comparison.

Abstract: A method for managing a flash storage system includes measuring an operation time to complete a data operation on a flash memory block of a flash memory device of the flash storage system. The method includes updating, based on the measured operation time, a running average time for the flash memory device to complete the data operation. The method includes comparing the updated running average time to a threshold time. The method includes adjusting an operating parameter for the flash memory device to perform the data operation based on the comparison.

Abstract: A storage device may include a controller and a plurality of memory devices logically divided into a plurality of pages. Each page in the plurality of pages may include a plurality of bits. The controller may be configured to: apply a read level to a control gate of a transistor for each respective bit in the plurality of bits; determine, based on an amount of current that flows through the transistor, a respective value for each bit from the respective plurality of bits; determine, based on the respective values for the respective plurality of bits, an error ratio that indicates a number of bits from the plurality of bits that are written as a first bit value but are incorrectly read as a second bit value relative to a number of bits from the plurality of bits that are written as the second bit value but are incorrectly read as the first bit value; and adjust, based on the error ratio, the read level.

Abstract: A storage device may include a controller and a plurality of memory devices logically divided into a plurality of pages. Each page in the plurality of pages may include a plurality of bits. The controller may be configured to: apply a read level to a control gate of a transistor for each respective bit in the plurality of bits; determine, based on an amount of current that flows through the transistor, a respective value for each bit from the respective plurality of bits; determine, based on the respective values for the respective plurality of bits, an error ratio that indicates a number of bits from the plurality of bits that are written as a first bit value but are incorrectly read as a second bit value relative to a number of bits from the plurality of bits that are written as the second bit value but are incorrectly read as the first bit value; and adjust, based on the error ratio, the read level.