Abstract: The present invention concerns laser diode arrays having an accurately spaced offset in the laser beams emanating from their respective laser stripes, and methods of their manufacture. The first method involves the mounting of at least two laser diodes on a submount such that the axes of the laser stripes between the two respective diodes are accurately spaced. The second method concerns the placement of a position mark on each diode at a accurate distance from the axis of the laser stripe such that the mark is easily detectable from a side view. The two diodes are then mounted with the axes of their laser stripes accurately spaced from the relative positioning of the position marks. The third method concerns the manufacture of laser diodes whose laser stripe axes are accurately spaced from at least one side edge of the diodes. The array of diodes is constructed such that the laser stripe axes are accurately spaced from each other relative to the side edges of accurate distance from their respective axes.

Abstract: Nonmonolithic laser arrays having lasing elements mounted on a composite support that enables accurate positioning and separation of the lasing elements, and that enables low thermal, optical, and electrical cross-talk. The support includes a low thermal diffusivity region surrounded by high thermal diffusivity regions which have defined mounting surfaces onto which the lasing elements mount. Heat generated in the lasing elements is conducted away by the high thermal diffusivity regions, while the low thermal diffusivity region reduces thermal cross-talk between the lasing elements. Beneficially, the support assists current flow to (or from) the lasing elements.

Abstract: The method of and apparatus for tuning the wavelength using an external diffraction grating is accomplished with a quantum well injection laser wherein the range of operating wavelength selection is extended beyond the expectations of wavelength selection in fundamental emission spectrum of conventional bulk-crystal heterostructure lasers to include wavelength selection at the multiple carrier recombination transition energies possible in the conduction band sub-bands and valence band sub-bands present in quantum well heterostructures of single or multiple quantum well lasers. Quantum well heterostructure lasers have a unique advantage over previous tuned semiconductor lasers, as exemplified in the previously cited prior art, in that the active region of the quantum well laser can be bandfilled to well above the bulk crystal band edge at moderate current densities indicative of excellent candidates for broad band tuning through a wide range of the quantum well sub-bands of the quantum well structure.

Abstract: In situ geometrical and stoichiometric properties of deposited films are brought about by employing a scanned irradiation source directed to a spot which is scanned across the growth surface in a chemical vaGOVERNMENT RIGHTSThe Government has certain rights in this invention pursuant to Contract No. 86F173100 awarded by the Defense Advanced Research Projects Agency (DARPA).