Abstract: A method of dry developing a multi-layer mask on a substrate is described. The method comprises forming the multi-layer mask on the substrate, wherein the multi-layer mask comprises a lithographic layer overlying a second mask layer. A feature pattern is then formed in the lithographic layer using a lithographic process, wherein the feature pattern comprises a first critical dimension (CD). Thereafter, the feature pattern is transferred from the lithographic layer to the second mask layer using a dry plasma etching process, wherein the dry plasma etching process comprises introducing a process gas, forming plasma from the process gas, and exposing the substrate to the plasma. During the pattern transfer, the first CD in the lithographic layer is reduced to a second CD in the silicon-containing layer.

Abstract: A method of dry developing a multi-layer mask on a substrate is described. The method comprises forming the multi-layer mask on the substrate, wherein the multi-layer mask comprises a lithographic layer overlying a second mask layer. A feature pattern is then formed in the lithographic layer using a lithographic process, wherein the feature pattern comprises a first critical dimension (CD). Thereafter, the feature pattern is transferred from the lithographic layer to the second mask layer using a dry plasma etching process, wherein the dry plasma etching process comprises introducing a process gas, forming plasma from the process gas, and exposing the substrate to the plasma. During the pattern transfer, the first CD in the lithographic layer is reduced to a second CD in the silicon-containing layer.

Abstract: A method of patterning a structure in a thin film on a substrate is described. A film stack on the substrate includes the thin film on the substrate, a developable anti-reflective coating (ARC) layer on the thin film, and a first photo-resist layer on the developable ARC layer. The first photo-resist layer and the developable ARC layer are imaged with a first image pattern and developed to form the first image pattern in the first photo-resist layer and the developable ARC layer. Thereafter, the first photo-resist layer is removed, and the developable ARC layer is modified by thermal treatment. A second photo-resist layer is then formed on the modified ARC layer, and the second photo-resist layer is imaged with a second image pattern and developed to form the second image pattern in the second photo-resist layer. The first and second image patterns are then transferred to the thin film.