Abstract: A flat-panel display apparatus having plasma discharge cells forming pixels arranged in a matrix of M row and N columns, wherein N is larger than M. The flat display panel has sustain electrodes and scan electrodes arranged in one direction and data electrodes in a second direction perpendicular to the first direction. A data driver circuit is coupled to the data electrodes for supplying data signals to the discharge cells in response to video information, wherein the data electrodes are arranged to constitute the M rows, the sustain and scan electrodes are arranged to constitute the N columns and the data driver circuit is adapted to supply data signals to a column of selected pixels.

Abstract: A flat-panel display apparatus having plasma discharge cells forming pixels arranged in a matrix of M row and N columns, wherein N is larger than M. The flat display panel has sustain electrodes and scan electrodes arranged in one direction and data electrodes in a second direction perpendicular to the first direction. A data driver circuit is coupled to the data electrodes for supplying data signals to the discharge cells in response to video information, wherein the data electrodes are arranged to constitute the M rows, the sustain and scan electrodes are arranged to constitute the N columns and the data driver circuit is adapted to supply data signals to a column of selected pixels.

Abstract: Method of providing a pattern of apertures and/or cavities in a plate of material which is suitable for powder blasting, or of cutting pieces from a plate (2) of such a material by means of powder blasting, using a non-metal layer of blast-resistant material (3) as a mask which is patterned while or after it is fixedly provided on the surface of the plate.

Abstract: A display device includes: a rear wall (4); a display panel (3) spaced from the rear wall (4) and a display screen (7) having a pattern of phosphor pixels; an addressing structure (100) disposed intermediate the rear wall (4) and the display panel (3) for addressing the display screen (7); and an aperture spacer plate (101); wherein, the spacer plate (101) includes a glass material having an electrical resistance of log R at 250.degree. C..gtoreq.8. The spacer plate (101) including a glass material having an electrical resistance of log R at 250.degree. C..gtoreq.8 reduces the charging of the spacer plate walls and improves uniformity of phosphor brightness. The spacer plate may further comprise a glass having a lower alkali mobility less than sodium lime glass.

Abstract: An electron beam apparatus comprising a semiconductor electron emitter whose emissive surface dimensions are determined by dimensions of a p-n junction provided in the semiconductor element. By optimizing the dimensions of the emissive surface in relation to the electron-optical properties of the apparatus, an emitter is realized which combines optimum beam formation or imaging with a sufficiently large beam current and a high beam current density as required by the apparatus.

Abstract: A cathode (32), a Wehnelt cylinder (2, 36) and an anode (3, 51) are accommodated in an integrated unit in an electron beam apparatus. Extremely accurate positioning of a Wehnelt bore and an anode bore with respect to one another can be achieved in such an assembled unit which is mounted in the apparatus so as to be removable as one unit. An exactly defined distance between the Wehnelt cylinder and the anode can also be adjusted. As a result of the exact mutual positioning, the anode bore can be chosen to be so small that it can also act as a beam aperture so that a smaller electron-optical object as well as a substantial reduction of the mutual electron interaction in the beam is achieved.

Abstract: An electron-emitting surface is provided with a material reducing the electron work function, which is obtained from a suitable reaction. The reaction mixture or the product to be decomposed, for example CsN.sub.3, is present in a surface depression of a semiconductor body, while one or more pn junctions act as a heating diode. Upon heating, cesium is released and deposited on the electron-emitting surface.

Abstract: An electron-emitting surface is provided with a material reducing the electron work function, which is obtained from a suitable reaction. The reaction mixture or the product to be decomposed, for example CsN.sub.3, is present in a surface depression of a semiconductor body, while one or more pn junctions act as a heating diode. Upon heating, cesium is released and deposited on the electron-emitting surface.