Patents by Inventor Harold J. Wiesmann

Harold J. Wiesmann has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for the indirect deposition of amorphous silicon and polycrystalline silicone and alloys thereof
    Patent number: 4634605
    Abstract: This invention relates to a method and apparatus for depositing films of amorphous and polycrystalline silicon and alloys thereof, by thermally decomposing a silicon bearing gas or gases and depositing the film onto a temperatured controlled substrate. The area of the heated surface is less than the area of the substrate. The substrate moves relative to independent of and outside of the heated surface.
    Type: Grant
    Filed: July 16, 1985
    Date of Patent: January 6, 1987
    Inventor: Harold J. Wiesmann
  • Photovoltaic tandem cell
    Patent number: 4536607
    Abstract: A photovoltaic tandem cell comprises an amorphous cell and a polycrystalline heterojunction cell. The cells are in optical series and separated by a transparent contact layer.
    Type: Grant
    Filed: March 1, 1984
    Date of Patent: August 20, 1985
    Inventor: Harold J. Wiesmann
  • Method of producing hydrogenated amorphous silicon film
    Patent number: 4237150
    Abstract: This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silane (SiH.sub.4) or other gases comprising H and Si, from a tungsten or carbon foil heated to a temperature of about 1400.degree.-1600.degree. C., in a vacuum of about 10.sup.-6 to 19.sup.-4 torr, to form a gaseous mixture of atomic hydrogen and atomic silicon, and depositing said gaseos mixture onto a substrate independent of and outside said source of thermal decomposition, to form hydrogenated amorphous silicon. The presence of an ammonia atmosphere in the vacuum chamber enhances the photoconductivity of the hydrogenated amorphous silicon film.
    Type: Grant
    Filed: April 18, 1979
    Date of Patent: December 2, 1980
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventor: Harold J. Wiesmann
  • Thermal decomposition of silane to form hydrogenated amorphous Si film
    Patent number: 4237151
    Abstract: This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silano (SiH.sub.4) or other gases comprising H and Si, at elevated temperatures of about 1700.degree.-2300.degree. C., and preferably in a vacuum of about 10.sup.-8 to 10.sup.-4 torr, to form a gaseous mixture of atomic hydrogen and atomic silicon, and depositing said gaseous mixture onto a substrate outside said source of thermal decomposition to form hydrogenated amorphous silicon.
    Type: Grant
    Filed: June 26, 1979
    Date of Patent: December 2, 1980
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: Myron Strongin, Arup K. Ghosh, Harold J. Wiesmann, Edward B. Rock, Harry A. Lutz, III