Abstract: The present invention accomplishes the thermal oxidation of the silicon side of the interface present in epitaxial silicon films grown on yttria-stabilized cubic zirconia, <Si>/<YSZ>, to form a dual-layer structure of <Si>/amorphous SiO.sub.2 /<YSZ>. The SiO.sub.2 films are formed in either dry oxygen (at 1100.degree. C.) or in pyrogenic steam (at 925.degree. C.) by the rapid diffusion of oxidizing species through a 425 .mu.m thick cubic zirconia substrate. For instance, a 0.17 .mu.m thick SiO.sub.2 layer is obtained after 100 min in pyrogenic steam at 925.degree. C. This relatively easy transport of oxidants is unique to YSZ and other insulators which are also superionic oxygen conductors, and cannot be achieved in other existing Si/insulator systems, such as silicon-on-sapphire.

Abstract: A method for producing monocrystalline semiconductor-on-insulator structures and article produced thereby, by the steps of heat treating a polished substrate of cubic zirconia to approximately 1150.degree.-1400.degree. C. for time to remove sufficient oxygen from the substrate in order to stabilize the surface; lowering the temperature to below 1075.degree. C.; and depositing a thin monocrystalline layer of a semiconductor material on the stabilized surface, by a chemical vapor deposition process.

Abstract: An epitaxial composite comprising a thin film of single crystal Group III-V wide band-gap compound semiconductor or semiconductor alloy on single crystal, electrically insulating oxide substrates such as sapphire, spinel, BeO, ThO.sub.2, or the like, and on III-V semiconductors or alloys. The thin film may be produced in situ on a heated substrate by reaction of an organic compound containing the Group III constituent, typically tfhe alkyl metal organic, such as trimethylgallium and/or triethylgallium with a Group V hydride such as arsine, phosphine and/or stibine.

Abstract: An epitaxial composite comprising a thin film of single crystal Group III-V wide band-gap compound semiconductor or semiconductor alloy on single crystal, electrically insulating oxide substrates such as sapphire, spinel, BeO, ThO.sub.2, or the like, and on III-V semiconductors or alloys. The thin film may be produced in situ on a heated substrate by reaction of an organic compound containing the Group III constituent, typically the alkyl metal organic, such as trimethylgallium and/or triethylgallium with a Group V hydride such as arsine, phosphine and/or stibine.

Abstract: A composite comprising a monocrystalline substrate and one or more layers or films of monocrystalline IVA-VIA compounds and/or alloys formed thereon by a chemical vapor deposition process. The composite is formed at a preferred temperature range of approximately 450.degree.-650.degree. C. The IVA-VIA layer(s) are produced by the pyrolysis of a gas mixture containing metalorganic compounds. Where single crystal metallic oxide substrates of rhombohedral structure, such as sapphire, (.alpha.-Al.sub.2 O.sub.3), or of cubic structure, such as magnesium aluminate (spinel), are used for the growth of monocrystalline lead-containing films such as Pb.sub.1-x Sn.sub.x Te, a nucleation layer of lead is preferably formed on the substrate prior to the pyrolysis of the mixed gaseous reactants.