Patents by Inventor Harold Persing
Harold Persing has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8877654Abstract: A plasma processing method is provided. The plasma processing method includes using the after-glow of a pulsed power plasma to perform conformal processing. During the afterglow, the equipotential field lines follow the contour of the workpiece surface, allowing ions to be introduced in a variety of incident angles, especially to non-planar surfaces. In another aspect of the disclosure, the platen may be biased positively during the plasma afterglow to attract negative ions toward the workpiece. Various conformal processing steps, such as implantation, etching and deposition may be performed.Type: GrantFiled: April 15, 2010Date of Patent: November 4, 2014Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Helen Maynard, Vikram Singh, Svetlana Radovanov, Harold Persing
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Patent number: 8728587Abstract: A plasma processing apparatus and method are disclosed which improve the repeatability of various plasma processes. The actual implanted dose is a function of implant conditions, as well as various other parameters. This method used knowledge of current implant conditions, as well as information about historical data to improve repeatability. In one embodiment, a plasma is created, a first sensing system is used to monitor a composition of the plasma and a second sensing system is used to monitor a total number of ions implanted. Information about plasma composition and dose per pulse is used to control one or more operating parameters in the plasma chamber. In another embodiment, this information is combined with historical data to control one or more operating parameters in the plasma chamber. In another embodiment, the thickness of material on the walls is measured, and used to modify one or more operating parameters.Type: GrantFiled: June 24, 2011Date of Patent: May 20, 2014Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: George Papasouliotis, Deven M. Raj, Harold Persing
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Publication number: 20120328771Abstract: A plasma processing apparatus and method are disclosed which improve the repeatability of various plasma processes. The actual implanted dose is a function of implant conditions, as well as various other parameters. This method used knowledge of current implant conditions, as well as information about historical data to improve repeatability. In one embodiment, information about plasma composition and dose per pulse is used to control one or more operating parameters in the plasma chamber. In another embodiment, this information is combined with historical data to control one or more operating parameters in the plasma chamber.Type: ApplicationFiled: June 24, 2011Publication date: December 27, 2012Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.Inventors: George Papasouliotis, Deven Raj, Harold Persing
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Publication number: 20110256732Abstract: A plasma processing method is provided. The plasma processing method includes using the after-glow of a pulsed power plasma to perform conformal processing. During the afterglow, the equipotential field lines follow the contour of the workpiece surface, allowing ions to be introduced in a variety of incident angles, especially to non-planar surfaces. In another aspect of the disclosure, the platen may be biased positively during the plasma afterglow to attract negative ions toward the workpiece. Various conformal processing steps, such as implantation, etching and deposition may be performed.Type: ApplicationFiled: April 15, 2010Publication date: October 20, 2011Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATESInventors: Helen Maynard, Vikram Singh, Svetlana Radovanov, Harold Persing
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Publication number: 20070084564Abstract: A doping apparatus includes a chamber and a plasma source. The plasma source generates dopant ions from a feed gas and provides the dopant ions to the chamber. A platen is positioned in the chamber proximate to the plasma source. The platen supports a substrate having planar and nonplanar features. At least one of a pressure proximate to the substrate, a flow rate of the feed gas, a power of the plasma, and a voltage applied to the platen is chosen so that dopant ions are implanted into both the planar and non-planar nonplanar features surfaces of the substrate.Type: ApplicationFiled: October 13, 2005Publication date: April 19, 2007Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.Inventors: Atul Gupta, Edmund Winder, Vikram Singh, Harold Persing
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Publication number: 20070087581Abstract: A technique for atomic layer deposition is disclosed. In one particular exemplary embodiment, the technique may be realized by a method for forming a strained thin film. The method may comprise supplying a substrate surface with one or more precursor substances having atoms of at least one first species and atoms of at least one second species, thereby forming a layer of the precursor substance on the substrate surface. The method may also comprise exposing the substrate surface to plasma-generated metastable atoms of a third species, wherein the metastable atoms desorb the atoms of the at least one second species from the substrate surface to form an atomic layer of the at least one first species. A desired amount of stress in the atomic layer of the at least one first species may be achieved by controlling one or more parameters in the atomic layer deposition process.Type: ApplicationFiled: December 8, 2006Publication date: April 19, 2007Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: Vikram SINGH, Harold Persing, Edmund Winder, Anthony Renau, George Papasouliotis
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Publication number: 20070065576Abstract: A technique for atomic layer deposition is disclosed. In one particular exemplary embodiment, the technique may be realized by an apparatus for atomic layer deposition. The apparatus may comprise a process chamber having a substrate platform to hold at least one substrate. The apparatus may also comprise a supply of a precursor substance, wherein the precursor substance comprises atoms of at least one first species and atoms of at least one second species, and wherein the supply provides the precursor substance to saturate a surface of the at least one substrate. The apparatus may further comprise a plasma source of metastable atoms of at least one third species, wherein the metabstable atoms are capable of desorbing the atoms of the at least one second species from the saturated surface of the at least one substrate to form one or more atomic layers of the at least one first species.Type: ApplicationFiled: September 9, 2005Publication date: March 22, 2007Inventors: Vikram Singh, Harold Persing, Edmund Winder, Jeffrey Hopwood, Anthony Renau
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Publication number: 20060289799Abstract: A method and apparatus are directed to providing a dopant profile adjustment solution in plasma doping systems for meeting both concentration and junction depth requirements. Bias ramping and bias ramp rate adjusting may be performed to achieve a desired dopant profile so that shallow and abrupt junctions in vertical and lateral directions are realized that are critical to device scaling in plasma doping systems.Type: ApplicationFiled: March 15, 2006Publication date: December 28, 2006Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: Ziwei Fang, Richard Appel, Vincent Deno, Vikram Singh, Harold Persing
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Patent number: 7132672Abstract: A Faraday dose and uniformity monitor can include a magnetically suppressed annular Faraday cup surrounding a target wafer. A narrow aperture can reduce discharges within Faraday cup opening. The annular Faraday cup can have a continuous cross section to eliminate discharges due to breaks. A plurality of annular Faraday cups at different radii can independently measure current density to monitor changes in plasma uniformity. The magnetic suppression field can be configured to have a very rapid decrease in field strength with distance to minimize plasma and implant perturbations and can include both radial and azimuthal components, or primarily azimuthal components. The azimuthal field component can be generated by multiple vertically oriented magnets of alternating polarity, or by the use of a magnetic field coil. In addition, dose electronics can provide integration of pulsed current at high voltage, and can convert the integrated charge to a series of light pulses coupled optically to a dose controller.Type: GrantFiled: April 2, 2004Date of Patent: November 7, 2006Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Steven R. Walther, Rajesh Dorai, Harold Persing, Jay Scheuer, Bon-Woong Koo, Bjorn O. Pedersen, Chris Leavitt, Timothy Miller
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Publication number: 20060063360Abstract: A technique for boron implantation is disclosed. In one particular exemplary embodiment, the technique may be realized by an apparatus for boron implantation. The apparatus may comprise a reaction chamber. The apparatus may also comprise a source of pentaborane coupled to the reaction chamber, wherein the source is capable of supplying a substantially pure form of pentaborane into the reaction chamber. The apparatus may further comprise a power supply that is configured to energize the pentaborane in the reaction chamber sufficiently to produce a plasma discharge having boron-bearing ions.Type: ApplicationFiled: September 16, 2005Publication date: March 23, 2006Inventors: Vikram Singh, Edmund Winder, Harold Persing, Timothy Miller, Ziwei Fang, Atul Gupta
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Publication number: 20060043316Abstract: An ion implanter includes an ion source for generating an ion beam, a target site for supporting a target for ion implantation and a beamline defining a beam path between the ion source and the target site. In one aspect, a magnetic steerer is disposed between the ion source and the target site for at least partially correcting unwanted deviation of the ion beam from the beam path. The magnetic steerer may position the ion beam relative to an entrance aperture of an ion optical element. In another aspect, the beamline includes a deceleration stage for decelerating the ion beam from a first transport energy to a second transport energy. The deceleration stage includes two or more electrodes, wherein at least one of the electrodes is a grid electrode positioned in the beam path.Type: ApplicationFiled: June 10, 2003Publication date: March 2, 2006Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: Reuel Liebert, Harold Persing, James Buff
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Publication number: 20050287307Abstract: A method for ion implantation of a substrate includes forming a plasma from at least one implant material comprising at least one implant species, implanting the at least one implant species into a surface of the substrate, and directing at least one surface-modifying species at the surface to reduce a surface damage associated with the plasma. An apparatus for ion implantation is configured to implement this method.Type: ApplicationFiled: June 23, 2004Publication date: December 29, 2005Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: Vikram Singh, Harold Persing, Timothy Miller, Atul Gupta, Ziwei Fang
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Publication number: 20050260354Abstract: A method for plasma ion implantation of a substrate includes providing a plasma ion implantation system including a process chamber, a source for producing a plasma in the process chamber, a platen for holding the substrate in the process chamber, and a voltage source for accelerating ions from the plasma into the substrate, depositing on interior surfaces of the process chamber a fresh coating that is similar in composition to a deposited film that results from plasma ion implantation of the substrate, before depositing the fresh coating, cleaning interior surfaces of the process chamber by removing an old film using one or more activated cleaning precursors, plasma ion implantation of the substrate according to a plasma ion implantation process, and repeating the steps of cleaning interior surfaces of the process chamber and depositing a fresh coating following plasma ion implantation of one or more substrates.Type: ApplicationFiled: May 20, 2004Publication date: November 24, 2005Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: Vikram Singh, Atul Gupta, Harold Persing, Steven Walther, Anne Testoni
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Publication number: 20050223991Abstract: A Faraday dose and uniformity monitor can include a magnetically suppressed annular Faraday cup surrounding a target wafer. A narrow aperture can reduce discharges within Faraday cup opening. The annular Faraday cup can have a continuous cross section to eliminate discharges due to breaks. A plurality of annular Faraday cups at different radii can independently measure current density to monitor changes in plasma uniformity. The magnetic suppression field can be configured to have a very rapid decrease in field strength with distance to minimize plasma and implant perturbations and can include both radial and azimuthal components, or primarily azimuthal components. The azimuthal field component can be generated by multiple vertically oriented magnets of alternating polarity, or by the use of a magnetic field coil. In addition, dose electronics can provide integration of pulsed current at high voltage, and can convert the integrated charge to a series of light pulses coupled optically to a dose controller.Type: ApplicationFiled: April 2, 2004Publication date: October 13, 2005Inventors: Steven Walther, Rajesh Dorai, Harold Persing, Jay Scheuer, Bon-Woong Koo, Bjorn Pedersen, Chris Leavitt, Timothy Miller
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Publication number: 20050205212Abstract: A plasma source includes a chamber that contains a process gas. The chamber has a chamber top comprising a first section formed of a dielectric material that extends in a horizontal direction. A second section of the chamber top is formed of a dielectric material that extends a height from the first section in a vertical direction. A top section of the chamber top is formed of a conductive material that extends a length across the second section in the horizontal direction. A radio frequency antenna is positioned proximate to at least one of the first section and the second section. The radio frequency antenna induces radio frequency currents into the chamber that excite and ionize the process gas so as to generate a plasma in the chamber.Type: ApplicationFiled: December 20, 2004Publication date: September 22, 2005Applicant: VARIAN SEMICONDUCTOR EQUIPMENTInventors: Vikram Singh, Harold Persing, Timothy Miller
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Publication number: 20050205211Abstract: A plasma immersion ion implant apparatus and method, and a plasma chamber, each configured to provide a uniform ion flux and to dissipate the effects of secondary electrons are disclosed. The invention includes a plasma chamber including a dielectric tophat configuration and a conductive top section that may be liquid cooled. In addition, the invention provides a radio frequency (RF) antenna configuration including an active antenna that is coupled to an RF source and a parasitic antenna that is not directly coupled to any RF source, but may be grounded. The RF antenna allows for tuning of the RF coupling.Type: ApplicationFiled: March 22, 2004Publication date: September 22, 2005Inventors: Vikram Singh, Timothy Miller, Paul Murphy, Harold Persing, Jay Scheuer, Donna Smatlak, Edmund Winder, Robert Bettencourt