Abstract: A level shifter circuit includes a level shifter configured to receive a first clock signal associated with a first power level and generate a second clock signal associated with a second power level, wherein the second power level is greater than the first power level. The level shifter circuit further includes an input clock buffer having a first input, wherein the first input comprises the second clock signal from the level shifter, and a second input coupled in parallel to the first input, wherein the second input includes the first clock signal.

Abstract: A memory device includes clock signal generation circuitry, and first integrated level shifter and latch circuitry. The clock signal generation circuitry receives a first clock signal and an isolation signal, and generates a second clock signal based on the first clock signal and the isolation signal. The isolation signal corresponds to a power state of a power supply associated with the first clock signal. The first integrated level shifter and latch circuitry receives an input signal in a first power supply domain, and latches a value the input signal based on the second clock signal. Further, the first integrated level shifter and latch circuitry outputs, based on the latched value, an output signal in a second power supply domain different than the first power supply domain.

Abstract: Various SRAM non-clamping write driver with write-assist are disclosed, including a write driver circuitry that does not clamp the Bitlines (BLs) during the write operations, and a negative BL Write-Assist (WA) circuit that provides a negative BL boost desirable for use with high-density bit cells. When used with memories other than those having high-density bit cells, the negative BL WA improves the minimum voltage (Vmin) and frequency of operation.

Abstract: Tracking circuitry for a memory device is disclosed. The tracking circuitry includes an inverter, a level shifter, delay circuitry, and a logic gate. The inverter is configured to receive a first clock signal and generate an inverted clock signal. The level shifter is configured to receive the first clock signal and the inverted clock signal and generate a level shifted clock signal. The delay circuitry is configured to receive the level shifted clock signal and generate an inverted level shifted clock signal. The logic gate comprises a first input configured to receive the first clock signal and a second input configured to receive the inverted level shifted clock signal. The logic gate is configured to generate a second clock signal based on the first clock signal and the inverted level shifted clock signal.

Abstract: A method of using on-chip circuitry to test a memory of a chip is provided. The method including, in a capture stage, receiving, at a first n-bit compression structure including n first stage latches corresponding to each bit of the first n-bit compression structure, a value at each respective first stage latch for each of n memory addresses of the memory, such that each respective first stage latch receives a respective value from a memory address of the memory, n being an integer greater than one, and in the capture stage, passing the values from each respective first stage latch through compression logic of the first n-bit compression structure to output a single compressed address value, providing the single compressed address value to a second stage latch of the first n-bit compression structure.

Abstract: A memory circuit system and method for using the same are provided. In one example, the memory circuit system includes a memory array, a first precharge circuit, and a second precharge circuit. The memory array writes a first set of columns of the memory array. The first precharge circuit charges bitlines of a second set of columns of the memory array while bitlines of the first set of columns discharge. The first set of columns is different from the second set of columns. The second precharge circuit charges the bitlines of the first set of columns after the memory array has finished writing the first set of columns.

Abstract: A memory bypass circuit for a memory device comprises: a word line disable circuit; a read and write activation circuit; an internal clock generator; and a write data input circuit. The word line disable circuit is coupled to a word line of the memory device for disabling a write function to the word line. The read and write activation circuit is coupled to the memory device for reading and writing of input data. The internal clock generator is coupled to the word line disable circuit and the read/write activation circuit. The write data input circuit is coupled to a write driver of the memory device for providing write data.

Abstract: A memory device having a wake-up protocol is disclosed. The memory device comprises a plurality of bitcells operative in a deep-sleep mode having corresponding bitline pairs coupled to the plurality of bitcells, a first PFET coupled between a core voltage supply and the plurality of bitcells configured to supply a core voltage to the plurality of bitcells, and a second PFET having a drain coupled to the plurality of bitcells, a source coupled to a gate of the first PFET, and a gate configured to receive a first wake signal to enable precharge of the plurality of bitcells.

Abstract: A memory device having a wake-up protocol is disclosed. The memory device comprises a plurality of bitcells operative in a deep-sleep mode having corresponding bitline pairs coupled to the plurality of bitcells, a first PFET coupled between a core voltage supply and the plurality of bitcells configured to supply a core voltage to the plurality of bitcells, and a second PFET having a drain coupled to the plurality of bitcells, a source coupled to a gate of the first PFET, and a gate configured to receive a first wake signal to enable precharge of the plurality of bitcells.

Abstract: A memory bypass circuit for a memory device comprises: a word line disable circuit; a read and write activation circuit; an internal clock generator; and a write data input circuit. The word line disable circuit is coupled to a word line of the memory device for disabling a write function to the word line. The read and write activation circuit is coupled to the memory device for reading and writing of input data. The internal clock generator is coupled to the word line disable circuit and the read/write activation circuit. The write data input circuit is coupled to a write driver of the memory device for providing write data.

Abstract: An integrated level-shifter and memory clock is disclosed that minimizes delay of voltage level-shifting from an external clock on a first logic supply voltage to an internal clock on a higher array supply voltage that is pulse-width independent of the external clock used to generate the internal clock. The generation of the internal clock on the higher array supply voltages is accomplished in two stages of logic. An array-tracking timing delay circuit mimics access delay to generate a MRST_P to reset the internal clock on the higher array supply voltage.

Abstract: A memory bypass circuit for a memory device comprises: a word line disable circuit; a read and write activation circuit; an internal clock generator; and a write data input circuit. The word line disable circuit is coupled to a word line of the memory device for disabling a write function to the word line. The read and write activation circuit is coupled to the memory device for reading and writing of input data. The internal clock generator is coupled to the word line disable circuit and the read/write activation circuit. The write data input circuit is coupled to a write driver of the memory device for providing write data.

Abstract: A fine grained negative wordline scheme for SRAM memories is disclosed. The scheme includes a circuit having a static random access memory (SRAM) cell including at least a wordline coupled to a plurality of NFETs of a transistor array. The circuit further includes a wordline driver including a plurality of inverters coupled between a wordline group decode node, a power supply and the wordline. Overvoltage on the wordline driver and NFETs of the SRAM cell are eliminated by applying a power gating mode and lowering the power supply voltage.

Abstract: A memory bypass circuit for a memory device comprises: a word line disable circuit; a read and write activation circuit; an internal clock generator; and a write data input circuit. The word line disable circuit is coupled to a word line of the memory device for disabling a write function to the word line. The read and write activation circuit is coupled to the memory device for reading and writing of input data. The internal clock generator is coupled to the word line disable circuit and the read/write activation circuit. The write data input circuit is coupled to a write driver of the memory device for providing write data.

Abstract: A fine grained negative wordline scheme for SRAM memories is disclosed. The scheme includes a circuit having a static random access memory (SRAM) cell including at least a wordline coupled to a plurality of NFETs of a transistor array. The circuit further includes a wordline driver including a plurality of inverters coupled between a wordline group decode node, a power supply and the wordline. Overvoltage on the wordline driver and NFETs of the SRAM cell are eliminated by applying a power gating mode and lowering the power supply voltage.

Abstract: A fine grained negative wordline scheme for SRAM memories is disclosed. The scheme includes a circuit having a static random access memory (SRAM) cell including at least a wordline coupled to a plurality of NFETs of a transistor array. The circuit further includes a wordline driver including a plurality of inverters coupled between a wordline group decode node, a power supply and the wordline. Overvoltage on the wordline driver and NFETs of the SRAM cell are eliminated by applying a power gating mode and lowering the power supply voltage.

Abstract: A fine grained negative wordline scheme for SRAM memories is disclosed. The scheme includes a circuit having a static random access memory (SRAM) cell including at least a wordline coupled to a plurality of NFETs of a transistor array. The circuit further includes a wordline driver including a plurality of inverters coupled between a wordline group decode node, a power supply and the wordline. Overvoltage on the wordline driver and NFETs of the SRAM cell are eliminated by applying a power gating mode and lowering the power supply voltage.

Abstract: A fine grained negative wordline scheme for SRAM memories is disclosed. The scheme includes a circuit having a static random access memory (SRAM) cell including at least a wordline coupled to a plurality of NFETs of a transistor array. The circuit further includes a wordline driver including a plurality of inverters coupled between a wordline group decode node, a power supply and the wordline. Overvoltage on the wordline driver and NFETs of the SRAM cell are eliminated by applying a power gating mode and lowering the power supply voltage.

Abstract: A fine grained negative wordline scheme for SRAM memories is disclosed. The scheme includes a circuit having a static random access memory (SRAM) cell including at least a wordline coupled to a plurality of NFETs of a transistor array. The circuit further includes a wordline driver including a plurality of inverters coupled between a wordline group decode node, a power supply and the wordline. Overvoltage on the wordline driver and NFETs of the SRAM cell are eliminated by applying a power gating mode and lowering the power supply voltage.

Abstract: A fine grained negative wordline scheme for SRAM memories is disclosed. The scheme includes a circuit having a static random access memory (SRAM) cell including at least a wordline coupled to a plurality of NFETs of a transistor array. The circuit further includes a wordline driver including a plurality of inverters coupled between a wordline group decode node, a power supply and the wordline. Overvoltage on the wordline driver and NFETs of the SRAM cell are eliminated by applying a power gating mode and lowering the power supply voltage.