Abstract: Integrated circuit structures having source or drain structures with low resistivity are described. In an example, integrated circuit structure includes a fin having a lower fin portion and an upper fin portion. A gate stack is over the upper fin portion of the fin, the gate stack having a first side opposite a second side. A first source or drain structure includes an epitaxial structure embedded in the fin at the first side of the gate stack. A second source or drain structure includes an epitaxial structure embedded in the fin at the second side of the gate stack. Each epitaxial structure of the first and second source or drain structures include silicon, germanium, gallium and boron. The first and second source or drain structures have a resistivity less than 2E-9 Ohm cm2.

Abstract: Disclosed herein are tri-gate transistor arrangements, and related methods and devices. For example, in some embodiments, a transistor arrangement may include a fin stack shaped as a fin extending away from a base, and a subfin dielectric stack. The fin includes a subfin portion and a channel portion, the subfin portion being closer to the base than the channel portion. The subfin dielectric stack includes a transistor dielectric material, and a fixed charge liner material disposed between the transistor dielectric material and the subfin portion of the fin.

Abstract: An apparatus including a transistor device disposed on a surface of a circuit substrate, the device including a body including opposing sidewalls defining a width dimension and a channel material including indium, the channel material including a profile at a base thereof that promotes indium atom diffusivity changes in the channel material in a direction away from the sidewalls. A method including forming a transistor device body on a circuit substrate, the transistor device body including opposing sidewalls and including a buffer material and a channel material on the buffer material, the channel material including indium and the buffer material includes a facet that promotes indium atom diffusivity changes in the channel material in a direction away from the sidewalls; and forming a gate stack on the channel material.

Abstract: Techniques and methods related to strained NMOS and PMOS devices without relaxed substrates, systems incorporating such semiconductor devices, and methods therefor may include a semiconductor device that may have both n-type and p-type semiconductor bodies. Both types of semiconductor bodies may be formed from an initially strained semiconductor material such as silicon germanium. A silicon cladding layer may then be provided at least over or on the n-type semiconductor body. In one example, a lower portion of the semiconductor bodies is formed by a Si extension of the wafer or substrate. By one approach, an upper portion of the semiconductor bodies, formed of the strained SiGe, may be formed by blanket depositing the strained SiGe layer on the Si wafer, and then etching through the SiGe layer and into the Si wafer to form the semiconductor bodies or fins with the lower and upper portions.

Abstract: Gate-all-around integrated circuit structures having confined epitaxial source or drain structures, are described. For example, an integrated circuit structure includes a plurality of nanowires above a sub-fin. A gate stack is over the plurality of nanowires and the sub-fin. Epitaxial source or drain structures are on opposite ends of the plurality of nanowires. The epitaxial source or drain structures comprise germanium and boron, and a protective layer comprises silicon, and germanium that at least partially covers the epitaxial source or drain structures. A conductive contact comprising titanium silicide is on the epitaxial source or drain structures.

Abstract: Techniques and methods related to strained NMOS and PMOS devices without relaxed substrates, systems incorporating such semiconductor devices, and methods therefor may include a semiconductor device that may have both n-type and p-type semiconductor bodies. Both types of semiconductor bodies may be formed from an initially strained semiconductor material such as silicon germanium. A silicon cladding layer may then be provided at least over or on the n-type semiconductor body. In one example, a lower portion of the semiconductor bodies is formed by a Si extension of the wafer or substrate. By one approach, an upper portion of the semiconductor bodies, formed of the strained SiGe, may be formed by blanket depositing the strained SiGe layer on the Si wafer, and then etching through the SiGe layer and into the Si wafer to form the semiconductor bodies or fins with the lower and upper portions.

Abstract: Transistors having a plurality of channel semiconductor structures, such as fins, over a dielectric material. A source and drain are coupled to opposite ends of the structures and a gate stack intersects the plurality of structures between the source and drain. Lateral epitaxial overgrowth (LEO) may be employed to form a super-lattice of a desired periodicity from a sidewall of a fin template structure that is within a trench and extends from the dielectric material. Following LEO, the super-lattice structure may be planarized with surrounding dielectric material to expose a top of the super-lattice layers. Alternating ones of the super-lattice layers may then be selectively etched away, with the retained layers of the super-lattice then laterally separated from each other by a distance that is a function of the super-lattice periodicity. A gate dielectric and a gate electrode may be formed over the retained super-lattice layers for a channel of a transistor.

Abstract: Embodiments disclosed herein include semiconductor devices with improved contact resistances. In an embodiment, a semiconductor device comprises a semiconductor channel, a gate stack over the semiconductor channel, a source region on a first end of the semiconductor channel, a drain region on a second end of the semiconductor channel, and contacts over the source region and the drain region. In an embodiment, the contacts comprise a silicon germanium layer, an interface layer over the silicon germanium layer, and a titanium layer over the interface layer.

Abstract: Embodiments related to transistors and integrated circuits having aluminum indium phosphide subfins and germanium channels, systems incorporating such transistors, and methods for forming them are discussed.

Abstract: Semiconductor nanowire devices having (111)-plane channel sidewalls and methods of fabricating semiconductor nanowire devices having (111)-plane channel sidewalls are described. For example, an integrated circuit structure includes a first semiconductor device including a plurality of vertically stacked nanowires disposed above a substrate, each of the nanowires comprising a discrete channel region having <111> lateral sidewalls along a <110> carrier transport direction. The integrated circuit structure also includes a second semiconductor device including a semiconductor fin disposed above the substrate, the semiconductor fin having a channel region with a top and side surfaces, the channel region having <111> lateral sidewalls along a <110> carrier transport direction.

Abstract: An electronic device comprises a channel layer on a buffer layer on a substrate. The channel layer has a first portion and a second portion adjacent to the first portion. The first portion comprises a first semiconductor. The second portion comprises a second semiconductor that has a bandgap greater than a bandgap of the first semiconductor.

Abstract: Semiconductor nanowire devices having (111)-plane channel sidewalls and methods of fabricating semiconductor nanowire devices having (111)-plane channel sidewalls are described. For example, an integrated circuit structure includes a first semiconductor device including a plurality of vertically stacked nanowires disposed above a substrate, each of the nanowires comprising a discrete channel region having <111> lateral sidewalls along a <110> carrier transport direction. The integrated circuit structure also includes a second semiconductor device including a semiconductor fin disposed above the substrate, the semiconductor fin having a channel region with a top and side surfaces, the channel region having <111> lateral sidewalls along a <110> carrier transport direction.

Abstract: Integrated circuit transistor structures are disclosed that reduce band-to-band tunneling between the channel region and the source/drain region of the transistor, without adversely increasing the extrinsic resistance of the device. In an example embodiment, the structure includes one or more spacer configured to separate the source and/or drain from the channel region. The spacer(s) regions comprise a semiconductor material that provides a relatively high conduction band offset (CBO) and a relatively low valence band offset (VBO) for PMOS devices, and a relatively high VBO and a relatively low CBO for NMOS devices. In some cases, the spacer includes silicon, germanium, and carbon (e.g., for devices having germanium channel). The proportions may be at least 10% silicon by atomic percentage, at least 85% germanium by atomic percentage, and at least 1% carbon by atomic percentage. Other embodiments are implemented with III-V materials.

Abstract: Techniques and methods related to strained NMOS and PMOS devices without relaxed substrates, systems incorporating such semiconductor devices, and methods therefor may include a semiconductor device that may have both n-type and p-type semiconductor bodies. Both types of semiconductor bodies may be formed from an initially strained semiconductor material such as silicon germanium. A silicon cladding layer may then be provided at least over or on the n-type semiconductor body. In one example, a lower portion of the semiconductor bodies is formed by a Si extension of the wafer or substrate. By one approach, an upper portion of the semiconductor bodies, formed of the strained SiGe, may be formed by blanket depositing the strained SiGe layer on the Si wafer, and then etching through the SiGe layer and into the Si wafer to form the semiconductor bodies or fins with the lower and upper portions.

Abstract: Integrated circuit transistor structures are disclosed that reduce band-to-band tunneling between the channel region and the source/drain region of the transistor, without adversely increasing the extrinsic resistance of the device. In an example embodiment, the structure includes one or more spacer configured to separate the source and/or drain from the channel region. The spacer(s) regions comprise a semiconductor material that provides a relatively high conduction band offset (CBO) and a relatively low valence band offset (VBO) for PMOS devices, and a relatively high VBO and a relatively low CBO for NMOS devices. In some cases, the spacer includes silicon, germanium, and carbon (e.g., for devices having germanium channel). The proportions may be at least 10% silicon by atomic percentage, at least 85% germanium by atomic percentage, and at least 1% carbon by atomic percentage. Other embodiments are implemented with III-V materials.

Abstract: Embodiments disclosed herein include forksheet transistor devices with depopulated channels. In an example, an integrated circuit structure includes a backbone. A first transistor device includes a first vertical stack of semiconductor channels adjacent to a first edge of the backbone. The first vertical stack of semiconductor channels includes first semiconductor channels and a second semiconductor channel over or beneath the first semiconductor channels. A concentration of a dopant in the first semiconductor channels is less than a concentration of the dopant in the second semiconductor channel. A second transistor device includes a second vertical stack of semiconductor channels adjacent to a second edge of the backbone opposite the first edge.

Abstract: Techniques and methods related to strained NMOS and PMOS devices without relaxed substrates, systems incorporating such semiconductor devices, and methods therefor may include a semiconductor device that may have both n-type and p-type semiconductor bodies. Both types of semiconductor bodies may be formed from an initially strained semiconductor material such as silicon germanium. A silicon cladding layer may then be provided at least over or on the n-type semiconductor body. In one example, a lower portion of the semiconductor bodies is formed by a Si extension of the wafer or substrate. By one approach, an upper portion of the semiconductor bodies, formed of the strained SiGe, may be formed by blanket depositing the strained SiGe layer on the Si wafer, and then etching through the SiGe layer and into the Si wafer to form the semiconductor bodies or fins with the lower and upper portions.

Abstract: Embodiments include a first nanowire transistor having a first source and a first drain with a first channel in between, where the first channel includes a first III-V alloy. A first gate stack is around the first channel, where a portion of the first gate stack is between the first channel and a substrate. The first gate stack includes a gate electrode metal in contact with a gate dielectric. A second nanowire transistor is on the substrate, having a second source and a second drain with a second channel therebetween, the second channel including a second III-V alloy. A second gate stack is around the second channel, where an intervening material is between the second gate stack and the substrate, the intervening material including a third III-V alloy. The second gate stack includes the gate electrode metal in contact with the gate dielectric.

Abstract: Group III-V semiconductor devices having asymmetric source and drain structures and their methods of fabrication are described. In an example, an integrated circuit structure includes a gallium arsenide layer on a substrate. A channel structure is on the gallium arsenide layer. The channel structure includes indium, gallium and arsenic. A source structure is at a first end of the channel structure and a drain structure is at a second end of the channel structure. The drain structure has a wider band gap than the source structure. A gate structure is over the channel structure.

Abstract: Techniques are disclosed for forming germanium (Ge)-rich channel transistors including one or more dopant diffusion barrier elements. The introduction of one or more dopant diffusion elements into at least a portion of a given source/drain (S/D) region helps inhibit the undesired diffusion of dopant (e.g., B, P, or As) into the adjacent Ge-rich channel region. In some embodiments, the elements that may be included in a given S/D region to help prevent the undesired dopant diffusion include at least one of tin and relatively high silicon. Further, in some such embodiments, carbon may also be included to help prevent the undesired dopant diffusion. In some embodiments, the one or more dopant diffusion barrier elements may be included in an interfacial layer between a given S/D region and the Ge-rich channel region and/or throughout at least a majority of a given S/D region. Numerous embodiments, configurations, and variations will be apparent.