Abstract: The invention utilizes colloidal silica soot (62) in a semiconductor process for chemical-mechanical planarizing a semiconductor integrated circuit workpiece (24) with a slurry (60). The particulate abrasive agent colloidal solid sphere fused silica soot (62) provides a beneficial CMP slurry/process for semiconductor device manufacturing compared to standard semiconductor CMP slurries with conventional colloidal sol-gel or fumed silica.

Abstract: A two-part reagent method for polishing an inorganic silicate substrate is provided. The method comprises: providing a silicate substrate; providing a reagent comprising: a first part consisting essentially of an aqueous solution of at least one metal oxide abrasive selected from the group consisting of titania, zirconia, germania, and germania-doped silica; and a second part consisting essentially of an alkali aqueous solution of colloidal silica having a buffered pH value of at least about 10; polishing a surface of said substrate with the metal oxide abrasive aqueous solution to a surface roughness (Ra) ranging from about 6 Å to about 10 Å; and further polishing the surface with said alkali aqueous solution of colloidal silica to a roughness of less than or equal to about 5 Å.

Abstract: The present invention relates to reflective masks and their use for reflecting extreme ultraviolet soft x-ray photons to enable the use of extreme ultraviolet soft x-ray radiation projection lithographic methods and systems for producing integrated circuits and forming patterns with extremely small feature dimensions. The projection lithographic method includes providing an illumination sub-system for producing and directing an extreme ultraviolet soft x-ray radiation &lgr; from an extreme ultraviolet soft x-ray source; providing a mask sub-system illuminated by the extreme ultraviolet soft x-ray radiation &lgr; produced by the illumination sub-system and providing the mask sub-system includes providing a patterned reflective mask for forming a projected mask pattern when illuminated by radiation &lgr;.

Abstract: The present invention relates to reflective masks and their use for reflecting extreme ultraviolet soft x-ray photons to enable the use of extreme ultraviolet soft x-ray radiation projection lithographic methods and systems for producing integrated circuits and forming patterns with extremely small feature dimensions. The projection lithographic method includes providing an illumination sub-system for producing and directing an extreme ultraviolet soft. x-ray radiation &lgr; from an extreme ultraviolet soft x-ray source; providing a mask sub-system illuminated by the extreme ultraviolet soft x-ray radiation &lgr; produced by the illumination sub-system and providing the mask sub-system includes providing a patterned reflective mask for forming a projected mask pattern when illuminated by radiation &lgr;.

Abstract: The present invention relates to reflective masks and their use for reflecting extreme ultraviolet soft x-ray photons to enable the use of extreme ultraviolet soft x-ray radiation projection lithographic methods and systems for producing integrated circuits and forming patterns with extremely small feature dimensions. The projection lithographic method includes providing an illumination sub-system for producing and directing an extreme ultraviolet soft x-ray radiation &lgr; from an extreme ultraviolet soft x-ray source; providing a mask sub-system illuminated by the extreme ultraviolet soft x-ray radiation &lgr; produced by the illumination sub-system and providing the mask sub-system includes providing a patterned reflective mask for forming a projected mask pattern when illuminated by radiation &lgr;.

Abstract: This light scattering technique for size measurement is based on the fact that an illuminated particle (inclusion) serves as a secondary radiation source in a manner which is related to its size. This technique allows for detection of inclusions in the interior of transparent solid media, such as bulk glass. When illuminated with a beam of monochromatic light such as a laser beam as the primary light source, the angular distribution of the scattered intensity originated from the inclusion in the micron to submicron range, is a function of intensity, wavelength and index of refraction. A lens and light trap block the primary light for reaching a detector. The light trap, however, allows the secondary scattered light to reach the detector.

Abstract: The invention provides a means for making below 200 nm VUV optical microlithography lens elements and preforms therefor. The inventive methods include polishing a fluoride optical lithography crystal with cerium to a surface roughness less than five angstroms. The invention includes making a 157 nm VUV optical lithography element preform by polishing a calcium fluoride crystal with cerium oxide polish.

Abstract: An aqueous solution of colloidal silica buffered to a pH value of about 10 or above, and inorganic silicate substrates finished to a surface roughness (Ra) of about 5 Å or less using such aqueous solution. The polished silicate substrate surface is consistently below about 2 Å Ra.

Abstract: A polishing application uses alkali, colloidal silica for polishing silicate-based glasses. Preferably, the silica solutions are adjusted to a pH of or above 10. The polished silicate-based glass surfaces have surface finishes consistently below 2 Å Ra. The unique method first polishes a surface of the substrate with an aqueous solution of at least one metal oxide abrasive and further polishes the surface of the substrate with an alkali aqueous solution of colloidal silica. Preferably, to the final smoothness of 2 Å Ra or less.

Abstract: This light scattering technique for size measurement is based on the fact that an illuminated particle (inclusion) serves as a secondary radiation source in a manner which is related to its size. This technique allows for detection of inclusions in the interior of transparent solid media, such as bulk glass. When illuminated with a beam of monochromatic light such as a laser beam as the primary light source, the angular distribution of the scattered intensity originated from the inclusion in the micron to submicron range, is a function of intensity, wavelength and index of refraction. A lens and light trap block the primary light for reaching a detector. The light trap, however, allows the secondary scattered light to reach the detector.

Abstract: This colloidal silica soot is a byproduct of chemical vapor deposition processing of fused silica or ultra low expansion glasses in the finishing industry. The colloidal silica by product is referred to as "soot". Retaining the same physical properties as the parent glass and having a spherical morphology, the colloidal silica soot is an ideal candidate for polishing applications. The soot has a large particle size when compared to conventional colloidal or fumed silica. As a result, the large size produces less surface damage and allows for a higher (faster) removal rate. The large particle size also results in super polished surfaces.

Abstract: A glass breaking system is provided for breaking large sheets of glass into small sheets, in which a laser beam having an elongated beam spot shape, with a largest dimension which is at least 20 mm, more preferably at least 30 mm, and most preferably at least 40 mm, is moved across a glass sheet to produce a partial crack score line. The glass sheet is then separated along the score line by applying a bending moment in the area of the partial crack.

Abstract: A glass breaking system is provided for breaking large sheets of glass into small sheets. A protective coating is applied to the glass sheet. A portion of the protective coating is then selectively removed, preferably by a laser beam, so that a portion of the surface of the coated side of the sheet is exposed. The glass sheet is then broken using laser separation techniques to break the glass sheet in the exposed area.