Abstract: A method of creating a patterned device by selecting a substrate; forming a first step on the substrate; depositing a sacrificial layer along the first step and the substrate; depositing a second step on a portion of the sacrificial layer; depositing a second layer on each of a portion of the substrate, sacrificial layer and second step that shares a common resistance to removal by a same agent as the substrate, the first step and the second step; removing a portion of the sacrificial layer so that a gap is created between the second layer and the first step, wherein a portion of the sacrificial layer remains such that the second layer remains; and processing the substrate beneath the gap created between the second layer and the first step.

Abstract: A method of fabricating a device using a sacrificial layer by selecting a substrate; forming a first step on the substrate, where the first step is formed from a second material; depositing a sacrificial layer along the first step and the substrate; depositing a second step on a portion of the sacrificial layer; depositing a second layer on each of a portion of the substrate, sacrificial layer and second step that shares a common resistance to removal by a same agent as the substrate, the first step and the second step; removing the second step; removing a portion of the sacrificial layer such that a gap is created between the second layer and the first step, wherein at least a portion of the sacrificial layer remains such that the second layer adhered to the substrate remains; and processing the substrate beneath the gap.

Abstract: A method of creating a patterned device by selecting a substrate; depositing a mask layer on the substrate; forming a first step on the mask layer; depositing a sacrificial layer along the first step and the mask layer; depositing a blocking layer on the sacrificial layer; removing a portion of the blocking layer, where a portion of the blocking layer remains such that no gap exists between the blocking layer and the sacrificial layer and the remaining blocking layer is adhered to the mask layer; removing a portion of the sacrificial layer such that a gap is created between the blocking layer and the first step, where a portion of the sacrificial layer remains such that the blocking layer adhered to the mask layer remains; etching the mask layer beneath the gap; and processing the substrate through the gap in the mask layer.

Abstract: The present invention is a method of fabricating a patterned device using a sacrificial spacer layer. The first step in this process is to select an appropriate substrate and form a step thereon. The sacrificial layer is then applied to the substrate and a blocking layer is deposited on the sacrificial layer. The blocking layer is etched back to define the mask for the semiconductor structure and the sacrificial layer is removed. The substrate is then etched using the gap created by removal of the sacrificial layer.

Abstract: A method of simultaneously depositing dielectric layers on both facets of an optical device and devices made therefrom. The steps of the method are selecting a substrate; forming an optical device on the substrate; forming an active-layer pumping structure on the optical device; forming facets in the optical device with at least two different orientations; and coating a user-definable number of dielectric layers onto the facets. The dielectric layers may be deposited in single dielectric layers or in pairs of dielectric layers. Single layers are useful for forming optical amplifiers while dielectric pairs are useful for forming lasers.

Abstract: A method of simultaneously depositing dielectric layers on both facets of an optical device and devices made therefrom. The steps of the method are selecting a substrate; forming an optical device on the substrate; forming an active-layer pumping structure on the optical device; forming facets in the optical device with at least two different orientations; and coating a user-definable number of dielectric layers onto the facets. The dielectric layers may be deposited in single dielectric layers or in pairs of dielectric layers. Single layers are useful for forming optical amplifiers while dielectric pairs are useful for forming lasers.