Abstract: A phosphor-converted light emitting device includes a light emitting diode (LED) on a substrate, where the LED comprises a stack of epitaxial layers comprising a p-n junction. A wavelength conversion material is in optical communication with the LED. According to one embodiment of the phosphor-converted light emitting device, a selective filter is adjacent to the wavelength conversion material, and the selective filter comprises a plurality of nanoparticles for absorbing light from the LED not down-converted by the wavelength conversion material. According to another embodiment of the phosphor-converted light emitting device, a perpendicular distance between a perimeter of the LED on the substrate and an edge of the substrate is at least about 24 microns. According to another embodiment of the phosphor-converted light emitting device, the LED comprises a mirror layer on one or more sidewalls thereof for reducing light leakage through the sidewalls.

Abstract: Methods are disclosed including applying a layer of binder material onto an LED structure. A luminescent solution including an optical material suspended in a solution is atomized using a flow of pressurized gas, and the atomized luminescent solution is sprayed onto the LED structure including the layer of binder material using the flow of pressurized gas.

Abstract: Provided according to embodiments of the invention are method of coating a phosphor that include contacting the phosphor with a sol comprising at least one of silica, alumina, borate and a precursor thereof, to form a coating on the phosphor; and heating the phosphor. Also provided are phosphors that are coated with alumina, silica and/or borate, and light emitting devices that include such phosphors.

Abstract: A light emitting diode (LED) component comprises an LED having a dominant wavelength in a range of from about 425 nm to less than 460 nm and a phosphor in optical communication with the LED. The phosphor includes a host lattice comprising yttrium aluminum garnet (YAG), and may include an activator comprising Ce and a substitutional dopant comprising Ga incorporated in the host lattice. An emission spectrum of the phosphor has a maximum intensity in a wavelength range of from about 540 nm to about 570 nm, and an excitation spectrum of the phosphor comprises an intensity at 440 nm equivalent to at least about 85% of a maximum intensity of the excitation spectrum.

Abstract: Light emitter devices, such as light emitting diode (LED) devices and related methods are disclosed. A light emitter device includes a ceramic based substrate, at least one LED chip disposed on the substrate, and a filling material. The ceramic substrate can include one or more surface features. The filling material can be disposed over and/or within a portion of the one or more surface features. Surface features can include one or more pedestals, trenches, holes, indentions, depressions, waves, and/or convexly or concavely curved surfaces. Surface features can improve optics of the LED device, for example, improving brightness, reflection, and/or light extraction associated with the device. Related methods are disclosed.

Abstract: A light emitting diode (LED) component comprises an LED comprising a dominant wavelength in a range of from about 425 nm to about 475 nm, and a phosphor composition in optical communication with the LED. The phosphor composition comprises a primary phase and one or more additional phases. An emission spectrum of the phosphor composition has a peak emission wavelength of between about 640 nm and about 670 nm and a FWHM of between about 40 nm and 65 nm. An x-ray diffraction pattern of the phosphor composition comprises a first intensity peak corresponding to the one or more additional phases at a 2-theta value of from about 26.5° to about 26.8°.

Abstract: Provided according to embodiments of the invention are methods of making a Ca1-x-ySrxEuyAlSiN3 phosphor composition that include selecting a Color Rendering Index (CRI) R9 value, determining an Eu concentration based on predetermined values to obtain the selected CRI R9 value and making the Ca1-x-ySrxEuyAlSiN3 phosphor having the determined Eu concentration. Also provided are methods for determining concentrations of Eu in a Ca1-x-ySrxEuyAlSiN3 phosphor that will achieve a CRI R9 value. Related computer products are also disclosed.

Abstract: Light emitting devices include a blue LED that emits blue light having a peak wavelength between 430 nanometers and 480 nanometers and a recipient luminophoric medium that includes luminescent materials that down-convert a portion of the blue light emitted by the blue LED to light having a peak wavelength that is between about 500 nanometers and about 545 nanometers. The combination of the blue light emitted by the blue LED and the light emitted by the luminescent materials in the recipient luminophoric medium comprises light that is perceived as blue light having a color point that falls within the region on the 1931 CIE Chromaticity Diagram defined by ccx, ccy chromaticity coordinates of (0.1355, 0.0399), (0.175, 0.0985), (0.1743 0.1581), (0.1096, 0.0868), (0.1355, 0.0399).

Abstract: A solid state light emitting device includes a solid state light emitter and a lumiphoric material that are selected for use with one another to provide light emissions with improved (i.e., reduced) thermal droop A solid state emitter having a short peak emission wavelength (e.g., in a visible range at or below 440 nm) seemingly less than optimal at room temperature for use with a particular lumiphor can trigger more efficient stimulation of lumiphor emissions at high temperatures. Enhanced epitaxial structures also inhibit decrease of radiant flux by LEDs at elevated temperatures.

Abstract: A phosphor-converted light emitting device includes a light emitting diode (LED) on a substrate, where the LED comprises a stack of epitaxial layers comprising a p-n junction. A wavelength conversion material is in optical communication with the LED. According to one embodiment of the phosphor-converted light emitting device, a selective filter is adjacent to the wavelength conversion material, and the selective filter comprises a plurality of nanoparticles for absorbing light from the LED not down-converted by the wavelength conversion material. According to another embodiment of the phosphor-converted light emitting device, a perpendicular distance between a perimeter of the LED on the substrate and an edge of the substrate is at least about 24 microns. According to another embodiment of the phosphor-converted light emitting device, the LED comprises a mirror layer on one or more sidewalls thereof for reducing light leakage through the sidewalls.

Abstract: Methods are disclosed including applying a layer of binder material onto an LED structure. A luminescent solution including an optical material suspended in a solution is atomized using a flow of pressurized gas, and the atomized luminescent solution is sprayed onto the LED structure including the layer of binder material using the flow of pressurized gas.

Abstract: Provided according to embodiments of the invention are phosphor compositions that include Ca1-x-ySrxEuyAlSiN3, wherein x is in a range of 0.50 to 0.99 and y is less than 0.013. Also provided according to embodiments of the invention are phosphor compositions that include Ca1-x-ySrxEuyAlSiN3, wherein x is in a range of 0.70 to 0.99 and y is in a range of 0.001 and 0.025. Also provided are methods of making phosphors and light emitting devices that include a phosphor composition according to an embodiment of the invention.

Abstract: A light emitting diode (LED) component comprises an LED having a dominant wavelength in a range of from about 425 nm to less than 460 nm and a phosphor in optical communication with the LED. The phosphor includes a host lattice comprising yttrium aluminum garnet (YAG), and may include an activator comprising Ce and a substitutional dopant comprising Ga incorporated in the host lattice. An emission spectrum of the phosphor has a maximum intensity in a wavelength range of from about 540 nm to about 570 nm, and an excitation spectrum of the phosphor comprises an intensity at 440 nm equivalent to at least about 85% of a maximum intensity of the excitation spectrum.

Abstract: Light emitter devices, such as light emitting diode (LED) devices and related methods are disclosed. A light emitter device includes a ceramic based substrate, at least one LED chip disposed on the substrate, and a filling material. The ceramic substrate can include one or more surface features. The filling material can be disposed over and/or within a portion of the one or more surface features. Surface features can include one or more pedestals, trenches, holes, indentions, depressions, waves, and/or convexly or concavely curved surfaces. Surface features can improve optics of the LED device, for example, improving brightness, reflection, and/or light extraction associated with the device. Related methods are disclosed.

Abstract: Provided according to embodiments of the invention are methods of making a Ca1-x-ySrxEuyAlSiN3 phosphor composition that include selecting a relative color point; determining Eu and Sr concentrations based on predetermined values to obtain the selected relative color point; and making the Ca1-x-ySrxEuyAlSiN3 phosphor having the determined Eu and Sr concentrations. Also provided are methods for determining concentrations of Sr and Eu in a Ca1-x-ySrxEuyAlSiN3 phosphor that will achieve a relative color point. Related computer products are also disclosed.

Abstract: Provided according to embodiments of the invention are method of coating a phosphor that include contacting the phosphor with a sol comprising at least one of silica, alumina, borate and a precursor thereof, to form a coating on the phosphor; and heating the phosphor. Also provided are phosphors that are coated with alumina, silica and/or borate, and light emitting devices that include such phosphors.

Abstract: An LED device comprises an LED chip or LED chip array for emitting light of a color spectrum, the LED chip or array being mounted on a component having a component surface. At least one color is applied to the component surface where the color is selected to reflect light to color tune the light emitted from the LED device to obtain a desired CRI.

Abstract: Provided according to embodiments of the invention are method of coating a phosphor that include contacting the phosphor with a sol comprising at least one of silica, alumina, borate and a precursor thereof, to form a coating on the phosphor; and heating the phosphor. Also provided are phosphors that are coated with alumina, silica and/or borate, and light emitting devices that include such phosphors.

Abstract: An LED device comprises an LED chip or LED chip array for emitting light of a color spectrum, the LED chip or array being mounted on a component having a component surface. At least one color is applied to the component surface where the color is selected to reflect light to color tune the light emitted from the LED device to obtain a desired CRI.

Abstract: A method of determining lighting contributions of elements of a lighting component includes obtaining optical data representative of light output of the lighting component. Relative intensity data may be calculated from the optical data, and may indicate intensity differences in the light output of the lighting component as compared to that of a reference component. An optical property of an element of the lighting component is determined based on a comparison of the optical data with that of the reference component, where the reference component includes at least one reference element. Related systems and apparatus are also discussed.