Patents by Inventor Harry Atwater

Harry Atwater has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Photovoltaic device
    Patent number: 8895845
    Abstract: Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. A photovoltaic (PV) unit, according to embodiments of the invention, may have a very thin absorber layer produced by epitaxial lift-off (ELO), all electrical contacts positioned on the back side of the PV device to avoid shadowing, and/or front side and back side light trapping employing a diffuser and a reflector to increase absorption of the photons impinging on the front side of the PV unit. Several PV units may be combined into PV banks, and an array of PV banks may be connected to form a PV module with thin strips of metal or conductive polymer applied at low temperature. Such innovations may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells.
    Type: Grant
    Filed: November 5, 2010
    Date of Patent: November 25, 2014
    Assignee: Alta Devices, Inc.
    Inventors: Isik C. Kizilyalli, Melissa Archer, Harry Atwater, Thomas J. Gmitter, Gang He, Andreas Hegedus, Gregg Higashi
  • Photovoltaic device
    Patent number: 8895846
    Abstract: Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. A photovoltaic (PV) unit, according to embodiments of the invention, may have a very thin absorber layer produced by epitaxial lift-off (ELO), all electrical contacts positioned on the back side of the PV device to avoid shadowing, and/or front side and back side light trapping employing a diffuser and a reflector to increase absorption of the photons impinging on the front side of the PV unit. Several PV units may be combined into PV banks, and an array of PV banks may be connected to form a PV module with thin strips of metal or conductive polymer applied at low temperature. Such innovations may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells.
    Type: Grant
    Filed: November 5, 2010
    Date of Patent: November 25, 2014
    Assignee: Alta Devices, Inc.
    Inventors: Isik C. Kizilyalli, Melissa Archer, Harry Atwater, Thomas J. Gmitter, Gang He, Andreas Hegedus, Gregg Higashi
  • Photovoltaic device with increased light trapping
    Patent number: 8895847
    Abstract: Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. A photovoltaic (PV) device may incorporate front side and/or back side light trapping techniques in an effort to absorb as many of the photons incident on the front side of the PV device as possible in the absorber layer. The light trapping techniques may include a front side antireflective coating, multiple window layers, roughening or texturing on the front and/or the back sides, a back side diffuser for scattering the light, and/or a back side reflector for redirecting the light into the interior of the PV device. With such light trapping techniques, more light may be absorbed by the absorber layer for a given amount of incident light, thereby increasing the efficiency of the PV device.
    Type: Grant
    Filed: November 5, 2010
    Date of Patent: November 25, 2014
    Assignee: Alta Devices, Inc.
    Inventors: Isik C. Kizilyalli, Melissa J. Archer, Harry Atwater, Thomas J. Gmitter, Gang He, Andreas G. Hegedus, Gregg Higashi
  • Plasmonic photovoltaics
    Patent number: 8866007
    Abstract: A surface plasmon polariton photovoltaic absorber. A plasmonic photovoltaic device is provided that has a periodic subwavelength aperture array, for example a thin metal film coated with an array of semiconductor quantum dots. The plasmonic photovoltaic device generates an electrical potential when illuminated by electromagnetic radiation. In some embodiments, the absorber can contain both quantum dots of semiconductors and metal nanoparticles.
    Type: Grant
    Filed: June 7, 2007
    Date of Patent: October 21, 2014
    Assignee: California Institute of Technology
    Inventor: Harry A. Atwater
  • NANOSCALE PLASMONIC FIELD-EFFECT MODULATOR
    Publication number: 20140301694
    Abstract: A plasmonic device having a transparent conducting oxide (TCO) waveguide and a tunable voltage applied across the TCO and a metal layer for modulating an input optical signal.
    Type: Application
    Filed: April 4, 2014
    Publication date: October 9, 2014
    Inventors: Ho Wai Lee, Stanley Burgos, Georgia Papadakis, Harry A. Atwater
  • SYSTEM AND METHOD FOR CONTROLLING AN INVERSION LAYER IN A PHOTOVOLTAIC DEVICE
    Publication number: 20140283906
    Abstract: A semiconductor photovoltaic device with an absorber layer for absorbing incident light, and a light transmitting layer located on the semiconductor body. The light transmitting layer induces an inversion layer in the semiconductor body and the current collected at the inversion layer is transported to a conductive electrode spaced from the light transmitting layer on the semiconductor body.
    Type: Application
    Filed: March 21, 2014
    Publication date: September 25, 2014
    Inventors: Harry A. Atwater, Michael Deceglie
  • Semiconductor wire array structures, and solar cells and photodetectors based on such structures
    Patent number: 8808933
    Abstract: A structure comprising an array of semiconductor structures, an infill material between the semiconductor materials, and one or more light-trapping elements is described. Photoconverters and photoelectrochemical devices based on such structure also described.
    Type: Grant
    Filed: November 30, 2010
    Date of Patent: August 19, 2014
    Assignee: California Institute of Technology
    Inventors: Michael D. Kelzenberg, Harry A. Atwater, Ryan M. Briggs, Shannon W. Boettcher, Nathan S. Lewis, Jan A. Petykiewicz
  • SYSTEM AND METHOD FOR COLOR IMAGING WITH INTEGRATED PLASMONIC COLOR FILTERS
    Publication number: 20140191113
    Abstract: A device for color imaging including an optical sensor having light sensitive pixels with a metal film disposed over the light sensitive pixels. The metal film has a group of nano-holes arranged over the pixels according to a periodic lattice formation and is configured to pass light of a preselected first range of wavelengths. The group of nano-holes arranged over an adjoining group of pixels is configured to pass light having ranges of wavelengths different from the first range of wavelengths.
    Type: Application
    Filed: January 6, 2014
    Publication date: July 10, 2014
    Inventors: Harry A. Atwater, Stanley Burgos, Sozo Yokogawa
  • Plasmonic modulator incorporating a solid-state phase change material
    Patent number: 8749866
    Abstract: Systems and methods are provided for modulating light of a wavelength of interest. The modulator assembly includes a plasmonic layer that supports surface plasmon polaritons at the wavelength of interest and a layer of solid-state phase change material having a first phase in which it is substantially transparent to light of the wavelength of interest and a second phase in which it is substantially opaque to light of the wavelength of interest. A control mechanism is configured to alter the phase of the solid-state phase change material between the first phase and the second phase. Each of the plasmonic layer and the layer of solid-state phase change material are configured as to provide a plasmonic mode of transmission for light of the wavelength of interest.
    Type: Grant
    Filed: December 15, 2011
    Date of Patent: June 10, 2014
    Assignee: Northrop Grumman Systems Corporation
    Inventors: Luke Sweatlock, Kenneth Diest, James Ma, Vladan Jankovic, Imogen Pryce, Ryan Briggs, Harry Atwater
  • HETEROJUNCTION MICROWIRE ARRAY SEMICONDUCTOR DEVICES
    Publication number: 20140096816
    Abstract: A heterojunction semiconductor device including an array of microstructures, each microstructure including a microwire of a first semiconductor material and a coating of a second semiconductor material forming a heterojunction with the microwire; a first electrical contact and a second electrical contact, one of which is connected to the microwire and the other of which is connected to the coating, is described. Also described are considerations for configuring the array of microstructures, and methods of forming the array of microstructures.
    Type: Application
    Filed: December 22, 2011
    Publication date: April 10, 2014
    Inventors: Harry A. Atwater, Nathan S. Lewis, Andrey D. Poletayev, Morgan C. Putnam, Michael D. Kelzenberg
  • Photovoltaic device with increased light trapping
    Patent number: 8686284
    Abstract: Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. A photovoltaic (PV) device may incorporate front side and/or back side light trapping techniques in an effort to absorb as many of the photons incident on the front side of the PV device as possible in the absorber layer. The light trapping techniques may include a front side antireflective coating, multiple window layers, roughening or texturing on the front and/or the back sides, a back side diffuser for scattering the light, and/or a back side reflector for redirecting the light into the interior of the PV device. With such light trapping techniques, more light may be absorbed by the absorber layer for a given amount of incident light, thereby increasing the efficiency of the PV device.
    Type: Grant
    Filed: October 23, 2009
    Date of Patent: April 1, 2014
    Assignee: Alta Devices, Inc.
    Inventors: Isik C. Kizilyalli, Melissa Archer, Harry Atwater, Thomas J. Gmitter, Gang He, Andreas Hegedus, Gregg Higashi
  • Thin absorber layer of a photovoltaic device
    Patent number: 8674214
    Abstract: Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. In one embodiment of a photovoltaic (PV) device, the PV device generally includes an n-doped layer and a p+-doped layer adjacent to the n-doped layer to form a p-n layer such that electric energy is created when electromagnetic radiation is absorbed by the p-n layer. The n-doped layer and the p+-doped layer may compose an absorber layer having a thickness less than 500 nm. Such a thin absorber layer may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells.
    Type: Grant
    Filed: October 23, 2009
    Date of Patent: March 18, 2014
    Assignee: Alta Devices, Inc.
    Inventors: Isik C. Kizilyalli, Melissa Archer, Harry Atwater, Thomas J. Gmitter, Gang He, Andreas Hegedus, Gregg Higashi
  • Thin absorber layer of a photovoltaic device
    Patent number: 8669467
    Abstract: Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. In one embodiment of a photovoltaic (PV) device, the PV device generally includes an n-doped layer and a p+-doped layer adjacent to the n-doped layer to form a p-n layer such that electric energy is created when electromagnetic radiation is absorbed by the p-n layer. The n-doped layer and the p+-doped layer may compose an absorber layer having a thickness less than 500 nm. Such a thin absorber layer may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells.
    Type: Grant
    Filed: November 5, 2010
    Date of Patent: March 11, 2014
    Assignee: Alta Devices, Inc.
    Inventors: Isik C. Kizilyalli, Melissa J. Archer, Harry Atwater, Thomas J. Gmitter, Gang He, Andreas G. Hegedus, Gregg Higashi
  • Electrically pumped extrinsic semiconductor optical amplifier with slot waveguide
    Patent number: 8619358
    Abstract: An optical amplifier on a silicon platform includes a first doped device layer and a second doped device layer. A gain medium is positioned between the first and second doped device layers. The gain medium comprises extrinsic gain materials so as to substantially confine in the gain medium a light signal and allow the optical amplifier to be electrically or optically pumped.
    Type: Grant
    Filed: November 3, 2009
    Date of Patent: December 31, 2013
    Assignees: Massachusetts Institute of Technology, California Institute of Technology, The Board of Trustees of the Leland Stanford Junior University, University of Rochester, Cornell University
    Inventors: Lionel C. Kimerling, Harry Atwater, Mark L. Brongersma, Luca Dal Negro, Thomas L Koch, Philippe Fauchet, Michal Lipson, Jurgen Michel, Carlos Angulo Barrios
  • Chemically Linked Colloidal Crystals and Methods Related Thereto
    Publication number: 20130327392
    Abstract: Nanoparticles may be formed into colloidal crystals that are chemically linked to a substrate. In certain implementations, the nanoparticles are formed into a colloidal crystal on an initial substrate, and then brought into contact with a binding precursor capable of chemically linking the colloidal crystal to a final substrate. Reacting the binding precursor to chemically link the colloidal crystal to the final substrate chemically links the colloidal crystal to the final substrate via functional groups linked to the nanoparticles and the final substrate respectively.
    Type: Application
    Filed: June 7, 2013
    Publication date: December 12, 2013
    Inventors: Raymond Weitekamp, Robert H. Grubbs, Harry A. Atwater
  • Methods and apparatus for a chemical vapor deposition reactor
    Patent number: 8602707
    Abstract: Embodiments of the invention generally relate to a levitating substrate carrier or support. In one embodiment, a substrate carrier for supporting and carrying at least one substrate or wafer is provided which includes a substrate carrier body containing an upper surface and a lower surface, and at least one indentation pocket disposed within the lower surface. In another embodiment, the substrate carrier includes at least open indentation area within the upper surface, and at least two indentation pockets disposed within the lower surface. Each indentation pocket may be rectangular and have four side walls extending substantially perpendicular to the lower surface.
    Type: Grant
    Filed: May 29, 2009
    Date of Patent: December 10, 2013
    Assignee: Alta Devices, Inc.
    Inventors: Gang He, Gregg Higashi, Khurshed Sorabji, Roger Hamamjy, Andreas Hegedus, Melissa Archer, Harry Atwater, Stewart Sonnenfeldt
  • METHODOLOGY FOR FORMING PNICTIDE COMPOSITIONS SUITABLE FOR USE IN MICROELECTRONIC DEVICES
    Publication number: 20130323877
    Abstract: The present invention provides methods for making pnictide compositions, particularly photoactive and/or semiconductive pnictides. In many embodiments, these compositions are in the form of thin films grown on a wide range of suitable substrates to be incorporated into a wide range of microelectronic devices, including photovoltaic devices, photodetectors, light emitting diodes, betavoltaic devices, thermoelectric devices, transistors, other optoelectronic devices, and the like. As an overview, the present invention prepares these compositions from suitable source compounds in which a vapor flux is derived from a source compound in a first processing zone, the vapor flux is treated in a second processing zone distinct from the first processing zone, and then the treated vapor flux, optionally in combination with one or more other ingredients, is used to grow pnictide films on a suitable substrate.
    Type: Application
    Filed: February 10, 2012
    Publication date: December 5, 2013
    Applicant: DOW GLOBAL TECHNOLOGIES LLC
    Inventors: Gregory M. Kimball, Jeffrey P. Bosco, Harry A. Atwater, Nathan S. Lewis, Marty W. Degroot, James C. Stevens
  • RAPID SELF-ASSEMBLY OF BLOCK COPOLYMERS TO PHOTONIC CRYSTALS
    Publication number: 20130324666
    Abstract: The invention provides a class of copolymers having useful properties, including brush block copolymers, wedge-type block copolymers and hybrid wedge and polymer block copolymers. In an embodiment, for example, block copolymers of the invention incorporate chemically different blocks comprising polymer size chain groups and/or wedge groups that significantly inhibit chain entanglement, thereby enhancing molecular self-assembly processes for generating a range of supramolecular structures, such as periodic nanostructures and microstructures. The present invention also provides useful methods of making and using copolymers, including block copolymers.
    Type: Application
    Filed: March 13, 2013
    Publication date: December 5, 2013
    Inventors: Yan XIA, Benjamin R SVEINBJORNSSON, Robert H GRUBBS, Raymond WEITEKAMP, Garret M MIYAKE, Harry A ATWATER, Victoria PIUNOVA, Christopher Scot DAEFFLER
  • MICROELECTRONIC STRUCTURES INCLUDING CUPROUS OXIDE SEMICONDUCTORS AND HAVING IMPROVED P-N HETEROJUNCTIONS
    Publication number: 20130298985
    Abstract: The present invention provides strategies for making higher quality p-n heterojunctions that incorporate cuprous oxide and another material suitable for forming the heterojunction. When incorporated into microelectronic devices, these improved heterojunctions would be expected to provide improved microelectronic properties such as improved defect density, in particular lower interfacial defect density at the p-n heterojunction, leading to improved microelectronic devices such as solar cell devices with improved open circuit voltage, fill factor, efficiency, current density, and the like.
    Type: Application
    Filed: September 29, 2011
    Publication date: November 14, 2013
    Applicant: California Institute of Technology
    Inventors: Davis S. Darvish, Harry A. Atwater
  • HIGH LEVEL INJECTION SYSTEMS
    Publication number: 20130276873
    Abstract: A semiconductor device having elongated structure having high-level injection are provided, as well as making and using such devices.
    Type: Application
    Filed: April 20, 2013
    Publication date: October 24, 2013
    Inventors: Elizabeth Santori, Nathan S. Lewis, Harry A. Atwater