Abstract: An equilibrium growth dispersion for use in liquid epitaxial growth at a predetermined growth temperature of a compound including at least two constituents. Predetermined quantities each of the constituents are placed in a container, the predetermined quantities being such that the total relative proportions of constituents will provide a saturated solution of one of the constituents in another of the constituents at the growth temperature, and the container with the predetermined quantities therein is heated to a temperature not less than the growth temperature to dissolve the constituents and is maintained at such a temperature for a period of time sufficient to produce a solution of one of the constituents in the other. The solution is then rapidly solidified, typically by quenching, to form the equilibrium growth dispersion which comprises an essentially homogeneous dispersion of particles of the one constituent (the solute) in the other (the solvent).

Abstract: A solar cell with improved energy conversion characteristics is formed from ordinary Czochralski or other types of silicon crystals that are sliced parallel to the growth axis or pulling direction. The slices are heat treated at a sufficiently high temperature and for a sufficiently long period of time to activate oxygen donor states in the slices. The heat treatment is of sufficient duration that at periodic maxima of oxygen concentration in the crystal it produces n-type regions where a background p-type dopant is overcompensated. Each n-type region thus formed is adjacent to a p-type region with a p-n junction therebetween. Collector contacts are applied at the faces of the slices to permit collection of carriers.

Abstract: A method of liquid phase epitaxial (LPE) growth of, for example, a semiconductor material or an oxide material whereby growth upon a seed in a seed-solution system is affected by passing electric current in an appropriate direction to effect migration of the materials to the growth interface or away from the interface and then cause deposition of desired materials upon said growth interface.

Abstract: A method of and apparatus for growing films composed of low-melting-point materials from a feed material whose constituents have large differences in vapor pressure. In the system disclosed, the feed material is contained within an ampoule whose only outlet is a downwardly directed capillary tube and delivered in the form of a melt to a heated environment whose temperature is higher than the temperature of vaporization of the constituent of the feed material having the highest vaporization temperature, thereby to effect flash vaporization of the liquid and thus avoid changes in composition or phase separation.

Abstract: A method of growing films composed of low-melting-point materials from a feed material whose constituents have large differences in vapor pressure. In the system disclosed, the feed material is contained within an ampoule and delivered in the form of a melt to a heated environment whose temperature is higher than the temperature of vaporization of the constituent of the feed material having the highest vaporization temperature, thereby to effect flash vaporization of the liquid and thus avoid changes in composition or phase separation.

Abstract: A semiconductor sensor adapted to detect with a high degree of sensitivity small magnitudes of a mechanical force, presence of traces of a gas or light. The sensor includes a high energy gap (i.e., .about. 1.0 electron volts) semiconductor wafer. Mechanical force is measured by employing a non-centrosymmetric material for the semiconductor. Distortion of the semiconductor by the force creates a contact potential difference (cpd) at the semiconductor surface, and this cpd is determined to give a measure of the force. When such a semiconductor is subjected to illumination with an energy less than the energy gap of the semiconductors, such illumination also creates a cpd at the surface. Detection of this cpd is employed to sense the illumination itself or, in a variation of the system, to detect a gas.