Abstract: A solderable zener diode adapted for mounting in a package of the type wherein leads or electrodes must be soldered to the diode contact pads has a shallow junction region formed by a controlled diffusion of a first type of semiconductivity impurity into a semiconductive material having a second type of semiconductivity to establish a desired zener voltage. A region of deep diffusion of first type of semiconductivity impurity is formed about and in contact with the shallow junction region, and a metal contact is electrically connected to the deep diffused region about its entire periphery. The shallow junction region is overlayed with a layer of glass and sputtered quartz and a metal contact pad is formed over the entire diffused region of the zener diode including the shallow junction region and the deep diffused region using multiple layers of contact metal.

Abstract: A zener diode adapted for mounting in a double plug package has a shallow junction region formed by a controlled diffusion of a first type of semiconductivity impurity into a semiconductive material having a second type of semiconductivity to establish a desired zener voltage. A region of deep diffusion of first type of semiconductivity impurity is formed adjacent to and in contact with the shallow junction region and a metal contact is connected to the deep diffused region.

Abstract: Articles having a first specific gravity may be separated from articles having a second specific gravity by placing said articles in an environment having a specific gravity between the specific gravities of the articles to be separated and thereafter subjecting the articles to pressure waves preferably of an ultrasonic frequency and having an intensity sufficient to initiate movement of said articles in the environment. The articles with the high specific gravity migrate downwardly while the lower specific gravity articles migrate upwardly to the surface where they may be removed.