Abstract: Methods of forming a PFET dielectric cap with varying concentrations of H2 reactive gas and the resulting devices are disclosed. Embodiments include forming p-type and n-type metal gate stacks, each surrounded by SiN spacers; forming an ILD surrounding the SiN spacers; planarizing the ILD, the metal gate stacks, and the SiN spacers; determining at least one desired threshold voltage for the p-type metal gate stack; forming a first cavity in the p-type metal gate stack for each desired threshold voltage and a second cavity in the n-type metal gate stack; selecting a first nitride layer for each first cavity, the first nitride layer for each cavity having a concentration of hydrogen reactive gas based on the desired threshold voltage associated with the cavity; forming the first nitride layers in the respective first cavities; and forming a second nitride layer, with a hydrogen rich reactive gas, in the second cavity.

Abstract: The present invention is directed to glycyrrhetinimidyl hydroxyproline alkyl ester compounds and their protected derivatives and cosmetically acceptable salts thereof, methods of making the compounds, cosmetic compositions containing at least one of the compounds and methods of using the same to promote collagen production in human skin. The compounds and cosmetic compositions of the invention provide various advantageous properties to the human skin.

Abstract: The present invention is directed to glycyrrhetinimidyl hydroxyproline alkyl ester compounds and their protected derivatives and cosmetically acceptable salts thereof, methods of making the compounds, cosmetic compositions containing at least one of the compounds and methods of using the same to promote collagen production in human skin. The compounds and cosmetic compositions of the invention provide various advantageous properties to the human skin.

Abstract: The present invention is directed to cyrrhetinic alkyl ester compounds, a method of making the compounds, cosmetic compositions containing the compound(s) and methods of using the same for the treatment of inflammation in human skin. The compounds and cosmetic compositions containing thereof provide various advantageous properties to the human skin.

Abstract: Methods of forming a PFET dielectric cap with varying concentrations of H2 reactive gas and the resulting devices are disclosed. Embodiments include forming p-type and n-type metal gate stacks, each surrounded by SiN spacers; forming an ILD surrounding the SiN spacers; planarizing the ILD, the metal gate stacks, and the SiN spacers; determining at least one desired threshold voltage for the p-type metal gate stack; forming a first cavity in the p-type metal gate stack for each desired threshold voltage and a second cavity in the n-type metal gate stack; selecting a first nitride layer for each first cavity, the first nitride layer for each cavity having a concentration of hydrogen reactive gas based on the desired threshold voltage associated with the cavity; forming the first nitride layers in the respective first cavities; and forming a second nitride layer, with a hydrogen rich reactive gas, in the second cavity.