Abstract: Methods and systems for a trace stacking structure may comprise a stacked trace including: a first trace that comprises a first seed layer and a first metal layer in a substrate and a second trace that is stacked on the trace. The second trace may include: a second seed layer and a second metal layer, a top surface, a bottom surface opposite the top surface, and sidewalls extending between the top surface and the bottom surface and may be wholly within the width of the trace laterally. A dielectric layer may be on the substrate and enclose the sidewalls of the second trace. A trace channel may be in the dielectric layer directly above the first trace, with the second trace in the trace channel. The second trace may be identical to the first trace its sidewalls may be perpendicular to the top surface and the bottom surface.

Abstract: A substrate includes a stacked trace formed from a trace and a first buildup trace stacked on the trace. The first buildup trace contacts and is electrically connected to the trace along the entire length of the trace. The current carrying cross-sectional area of the stacked trace is greater than the current carrying cross-sectional area of the trace. Accordingly, a plurality of the stacked traces can be formed with a small width and thus small pitch yet with a large current carrying cross-sectional area.