Patents by Inventor Harry F. Lockwood

Harry F. Lockwood has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7408142
    Abstract: A microchannel amplifier includes an insulating substrate that defines at least one microchannel pore through the substrate from an input surface to an output surface. A conductive layer is formed on an outer surface of the at least one microchannel pore that has a non-uniform resistance as a function of distance through the at least one microchannel pore. The non-uniform resistance is selected to simulate saturation by reducing gain as a function of input current and bias voltage compared with uniform resistance. A first and second electrode is deposited on a respective one of the input and the output surfaces of the insulating substrate. The microchannel amplifier amplifying emissions propagating through the at least one microchannel pore when the first and second electrodes are biased.
    Type: Grant
    Filed: September 14, 2006
    Date of Patent: August 5, 2008
    Assignee: Arradiance, Inc.
    Inventors: David R. Beaulieu, Harry F. Lockwood, Anton S. Tremsin
  • Patent number: 6522061
    Abstract: A field emission device with a micro-channel gain element included a plurality of field emission or “cold” cathodes (102) formed into an array. The cold cathodes are typically modulated by a grid (108) having a driving voltage. A microchannel gain element (114) is secondary electron emissive material within each of the channels. The channels correspond number and location to the cathode and enable multiplication of electron emitted by the cathodes. Multiplication of the electrons enables the cathodes to be driven at a lower current of emitted electrons than normally applied, absent the microchannel, to obtain the same resulting beam. The beam existing each of the micro-channels is directed to an anode (130), which can include a phosphor (128) for use in a flat panel display.
    Type: Grant
    Filed: August 21, 2000
    Date of Patent: February 18, 2003
    Inventor: Harry F. Lockwood
  • Patent number: 6320257
    Abstract: A hermetically sealed package for at least one semiconductor chip is provided which is formed of a substrate having electrical interconnects thereon to which the semiconductor chips are selectively bonded, and a lid which preferably functions as a heat sink, with a hermetic seal being formed around the chips between the substrate and the heat sink. The substrate is either formed of or includes a layer of a thermoplastic material having low moisture permeability which material is preferably a liquid crystal polymer (LCP) and is a multiaxially oriented LCP material for preferred embodiments. Where the lid is a heat sink, the heat sink is formed of a material having high thermal conductivity and preferably a coefficient of thermal expansion which substantially matches that of the chip. A hermetic bond is formed between the side of each chip opposite that connected to the substrate and the heat sink.
    Type: Grant
    Filed: September 27, 1994
    Date of Patent: November 20, 2001
    Assignee: Foster-Miller, Inc.
    Inventors: Kumaraswamy Jayaraj, Thomas E. Noll, Harry F. Lockwood
  • Patent number: 5729244
    Abstract: A field emission device with microchannel gain element provides a plurality of field emission or "cold" cathodes formed generally into an array. The cold cathodes are typically modulated by a grid having a driving voltage. A microchannel gain element is located adjacent the array of cathodes and provides a series of microchannels having a secondary electron emissive material within each of the channels. The channels correspond in number and location to the cathodes and enable multiplication of electrons emitted by the cathodes. Multiplication of the electrons enables the cathodes to be driven at a lower current of emitted electrons than normally applied, absent the microchannel, to obtain the same resulting beam. The beam exiting each of the microchannels is directed to an anode which can comprise a phosphor for use in a flat panel display.
    Type: Grant
    Filed: April 4, 1995
    Date of Patent: March 17, 1998
    Inventor: Harry F. Lockwood
  • Patent number: 5163108
    Abstract: A method of passively aligning optical receiving elements such as fibers to the active elements of a light generating chip includes the steps of forming two front and one side pedestal structures on the surface of a substrate body, defining a vertical sidewall of the chip to form a mating channel having an edge at a predetermined distance from the first active element, mounting the chip epi-side down on the substrate surface, and positioned the fibers in fiber-receiving channels so that a center line of each fiber is aligned to a center line of a respective active element. When mounted, the front face of the chip is abutting the contact surfaces of the two front pedestals, and the defined sidewall of the mating channel is abutting the contact surface of the side pedestal. The passive alignment procedure is also effective in aligning a single fiber to a single active element.
    Type: Grant
    Filed: August 2, 1991
    Date of Patent: November 10, 1992
    Assignee: GTE Laboratories Incorporated
    Inventors: Craig A. Armiento, Chirravuri Jagannath, Marvin J. Tabasky, Thomas W. Fitzgerald, Harry F. Lockwood, Paul O. Haugsjaa, Mark A. Rothman, Vincent J. Barry, Margaret B. Stern
  • Patent number: 5077878
    Abstract: A method of passively aligning optical receiving elements such as fibers to the active elements of a light generating chip includes the steps of forming two front and one side pedestal structures on the surface of a substrate body, defining a vertical sidewall of the chip to form a mating channel having an edge at a predetermined distance from the first active element, mounting the chip epi-side down on the substrate surface, and positioning the fibers in fiber-receiving channels to that a center line of each fiber is aligned to a center line of a respective active element. When mounted, the front face of the chip is abutting the contact surfaces of the two front pedestals, and the defined sidewall of the mating channel is abutting the contact surface of the side pedestal. The passive alignment procedure is also effective in aligning a single fiber to a single active element.
    Type: Grant
    Filed: July 11, 1990
    Date of Patent: January 7, 1992
    Assignee: GTE Laboratories Incorporated
    Inventors: Craig A. Armiento, Chirravuri Jagannath, Marvin J. Tabasky, Thomas W. Fitzgerald, Harry F. Lockwood, Paul O. Haugsjaa, Mark A. Rothman, Vincent J. Barry, Margaret B. Stern
  • Patent number: 5021363
    Abstract: Method of forming conductive members on a substrate of GaAs. Silicon is placed on the substrate surface in the desired pattern of the conductive members. The substrate is exposed to a gaseous atmosphere containing WF.sub.6. WF.sub.6 is reduced by the silicon causing tungsten to selectively deposit on the silicon but not on the exposed GaAs. The substrate is given a rapid thermal annealing treatment which causes the silicon-tungsten elements to form conductive members having a silicon rich layer at the bottom, an intermediate tungsten silicide layer, and a tungsten rich layer at the top. The conductive members form ohmic contacts with underlying heavily doped GaAs and rectifying Schottky barrier contacts with underlying lightly doped GaAs.
    Type: Grant
    Filed: September 7, 1989
    Date of Patent: June 4, 1991
    Assignee: Laboratories Incorporated
    Inventors: Harry F. Lockwood, Margaret B. Stern, Marvin Tabasky, Victor Cataldo
  • Patent number: 4347655
    Abstract: A new package for semiconductor optoelectronic devices is disclosed, which comprises a novel geometrical configuration and provides plug-in capability. The package configuration provides a convenient means for supplying electrical signals to or from the device(s) within the package while maintaining a coaxial geometry, useful in optical and thermal control. Techniques for bonding devices into the package are easily automated using conventional bonding and assembly equipment. The package permits use of the device in a variety of orientations.
    Type: Grant
    Filed: May 5, 1980
    Date of Patent: September 7, 1982
    Assignee: Optical Information Systems, Inc.
    Inventors: Peter S. Zory, Frederick W. Scholl, Harry F. Lockwood
  • Patent number: 4243744
    Abstract: Microwave curing of photoresist films employed in processing semiconductor wafers provides an alternative to conventional drying techniques. The time of curing may be reduced from about 20 to 25 minutes required for conventional air drying to about 5 minutes employing microwave curing. Further, the photoresist film is the only part of the semiconductor assembly that experiences elevated temperatures. The remainder of the wafer remains near ambient conditions, without experiencing possible deleterious effects as a consequence of the high temperature processing.
    Type: Grant
    Filed: December 22, 1978
    Date of Patent: January 6, 1981
    Assignee: Exxon Research & Engineering Co.
    Inventors: Harry F. Lockwood, Thomas F. McGee
  • Patent number: 4240098
    Abstract: A new package for semiconductor optoelectronic devices is disclosed, which comprises a novel geometrical configuration and provides plug-in capability. The package configuration provides a convenient means for supplying electrical signals to or from the device(s) within the package while maintaining a coaxial geometry, useful in optical and thermal control. Techniques for bonding devices into the package are easily automated using conventional bonding and assembly equipment. The package permits use of the device in a variety of orientations.
    Type: Grant
    Filed: September 28, 1978
    Date of Patent: December 16, 1980
    Assignee: Exxon Research & Engineering Co.
    Inventors: Peter S. Zory, Frederick W. Scholl, Harry F. Lockwood
  • Patent number: 4178564
    Abstract: A body of semiconductor material of an injection laser device, capable of operating at a power level up to a few milliwatts per micrometer of emitting width, has two opposed facet surfaces. On at least one of the facet surfaces is a protection layer of an insulating material having an optical thickness equal to approximately one-half the vacuum wavelength of the optical radiation emitted by the device.
    Type: Grant
    Filed: January 15, 1976
    Date of Patent: December 11, 1979
    Assignee: RCA Corporation
    Inventors: Ivan Ladany, Michael Ettenberg, Harry F. Lockwood, Henry Kressel