Patents by Inventor Harry Haklay Chuang

Harry Haklay Chuang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7332756
    Abstract: A semiconductor structure having a damascene gate structure and a resistive device on a semiconductor substrate is disclosed. The structure includes a first dielectric layer having a first opening and a second opening formed on the semiconductor substrate, and one or more sidewall spacers formed on inner sides of the first opening, in which a portion of the semiconductor substrate is exposed. In addition, the structure includes a coating layer formed on inner sides and a bottom surface of the second opening, a damascene gate structure surrounded by the sidewall spacers formed in the first opening, and a resistive device formed on the coating layer in the second opening.
    Type: Grant
    Filed: November 21, 2005
    Date of Patent: February 19, 2008
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chung Long Cheng, Kong-Beng Thei, Harry Haklay Chuang