Abstract: Automated bonding of chips to tape and formation of bonding structures on Tape Automated Bonding (TAB) packaging structures are provided with bonding balls on the ends of beams leads of the TAB tape. Also balltape bonding balls are aligned on stacked TAB sheets and bonded together to form via interconnections through stacked balltape balls in multilayer, electronic packaging structures. Interconnection structures are provided for a universal chip connection laminate which can be applied between a chip and an MLC package. Area TAB tape, which comprises a modification of TAB tape provides balltape TAB connections by means of balltape bonds to areas within the interior of a chip whose leads are bonded in a TAB tape arrangement to the Inner Lead Bonds of the area tape.

Abstract: A specially designed module and integrated circuit chip therefor which permits the sharing of module EC pads between chip receiver and driver circuits. The chip has a direct normal input line to each receiver circuit therein and a direct normal output line from each driver circuit therein along with signal lines from each of those circuits to various EC pads. The chip further includes a switching and control circuit for switching the receiver circuits and driver circuits between their normal and EC lines to effect an electronic delete function. In a preferred embodiment, a majority of the EC pads are switchably connected via the switching and control circuit to different sets of three adjacent receiver circuits, driver circuits, or a combination thereof. The design permits the use of approximately half the EC pads normally required for a module, while permitting EC connections to be made in most cases to three adjacent receiver or driver circuits simultaneously.

Abstract: A new dotting circuit for integrated circuit chips which provides line switching, as well as simultaneous true and complementary outputs, while eliminating the need for the standard collector circuit voltage clamp. This circuit is implemented by the collector dotting of two or more input transistors, the collector dotting of their respective reference transistors, the emitter dotting of one input transistor and a reference transistor to a constant current source, the emitter dotting of the other input transistor and the other reference transistor to a different constant current source, and an inhibit circuit for permitting current to flow to only one of the emitter-dotted circuits in accordance with a logic control signal.

Abstract: The invention is the structure and process for making a bucket brigade device which comprises the merger of an MOS capacitor with an MOSFET device to form the charge transfer cell. A first thin N-type region is implanted at a first concentration in a portion of the P-type channel region of an FET device adjacent to the drain diffusion. A second region is implanted with N-type dopant at a second concentration less than the first concentration, adjacent to and continuous with the first implanted region. The N-type concentration in the second region is just sufficient to compensate for the P-type background doping in the channel region. This structure increases the charge transfer efficiency for the cell and reduces its sensitivity of the threshold voltage to the source-drain voltage. The gate for the device has a substantial overlap over the drain and a minimal overlap over the source and the gate to drain capacitance per unit area is maximized by maintaining a uniformly thin oxide layer across the gate region.