Abstract: Reconfigurable, active optical components can flexibly manipulate light. One example of these components is an electro-chemo-optical device that utilizes a metal oxide film with a complex refractive index that varies as a function of an oxygen vacancy concentration. The optical device may include a metal oxide film, a first electrode, and a second electrode. The first electrode and the second electrode may be used to supply a bias voltage to induce a change in the oxygen vacancy concentration in order to change the optical properties (absorbance, transmittance, and/or reflectance) of the optical device. The magnitude and spatial distribution of the oxygen vacancy concentration may be altered to affect the optical properties of the optical device. In some designs, the optical device may also include an ionic conductor and oxygen source to supply/receive oxygen ions to/from the metal oxide film.

Abstract: An optoelectronic memristor includes a first electrode, a second electrode, and a solid electrolyte in between that is in electrical communication with the first electrode and the second electrode. The solid electrolyte has an electronic conductivity of about 10?10 Siemens/cm to about 10?4 Siemens/cm at room temperature. The first electrode, and optionally the second electrode, can be optically transparent at a specific wavelength and/or a wavelength range. A direct current (DC) voltage source is employed to apply an electric field across the solid electrolyte, which induces a spatial redistribution of ionic defects in the solid electrolyte. In turn, this causes a change in electrical resistance of the solid electrolyte. The application of the electric field can also cause a change in an optical property of the solid electrolyte at the specific wavelength, and/or at the wavelength range (or a portion thereof).

Abstract: An optoelectronic memristor includes a first electrode, a second electrode, and a solid electrolyte in between that is in electrical communication with the first electrode and the second electrode. The solid electrolyte has an electronic conductivity of about 10?10 Siemens/cm to about 10?4 Siemens/cm at room temperature. The first electrode, and optionally the second electrode, can be optically transparent at a specific wavelength and/or a wavelength range. A direct current (DC) voltage source is employed to apply an electric field across the solid electrolyte, which induces a spatial redistribution of ionic defects in the solid electrolyte. In turn, this causes a change in electrical resistance of the solid electrolyte. The application of the electric field can also cause a change in an optical property of the solid electrolyte at the specific wavelength, and/or at the wavelength range (or a portion thereof).

Abstract: Current techniques for measuring chemical expansion in thin film structures are too slow, too imprecise, or require synchrotrons. In contrast, nanoscale electrochemomechanical spectroscopy (NECS) can be used to make nanoscale measurements at time scales of seconds with simple contact or non-contact sensors. In a NECS measurement, a sample, such as thin-film oxide structure, is subjected to a temporally modulated stimulus, such as a sinusoidally alternating voltage. The stimulus causes the sample to expand, contract, deflect, or otherwise deform. A sensor, such as a contact probe or optical sensor, produces an electrical signal in response to this deformation that is correlated with the temporal modulation of the stimulus. Because the stimulus and deformation are correlated, the temporal modulation of the stimulus can be used to filter the deformation signal produced by the sensor, producing a precise, sensitive measurement of the deformation.

Abstract: Reconfigurable, active optical components can flexibly manipulate light. One example of these components is an electro-chemo-optical device that utilizes a metal oxide film with a complex refractive index that varies as a function of an oxygen vacancy concentration. The optical device may include a metal oxide film, a first electrode, and a second electrode. The first electrode and the second electrode may be used to supply a bias voltage to induce a change in the oxygen vacancy concentration in order to change the optical properties (absorbance, transmittance, and/or reflectance) of the optical device. The magnitude and spatial distribution of the oxygen vacancy concentration may be altered to affect the optical properties of the optical device. In some designs, the optical device may also include an ionic conductor and oxygen source to supply/receive oxygen ions to/from the metal oxide film.

Abstract: Gas sensor. The sensor is a single crystalline SnO disk and circuitry for measuring electrical resistance of the disk is provided. A change in resistance in the disk indicates adsorption of a gas on the disk's surface. The sensor is particularly adapted for detecting NO2 with high sensitivity and selectivity.

Abstract: Current techniques for measuring chemical expansion in thin film structures are too slow, too imprecise, or require synchrotrons. In contrast, nanoscale electrochemomechanical spectroscopy (NECS) can be used to make nanoscale measurements at time scales of seconds with simple contact or non-contact sensors. In a NECS measurement, a sample, such as thin-film oxide structure, is subjected to a temporally modulated stimulus, such as a sinusoidally alternating voltage. The stimulus causes the sample to expand, contract, deflect, or otherwise deform. A sensor, such as a contact probe or optical sensor, produces an electrical signal in response to this deformation that is correlated with the temporal modulation of the stimulus. Because the stimulus and deformation are correlated, the temporal modulation of the stimulus can be used to filter the deformation signal produced by the sensor, producing a precise, sensitive measurement of the deformation.

Abstract: A piezoelectric actuator expands or deflects in response to an applied voltage. Unfortunately, the voltage required to actuate a piezoelectric device is usually on the order of MV/cm. And most piezoelectric devices don't work well, if at all, at temperatures above 450° C. Fortunately, an oxide film actuator can work at temperatures above 450° C. and exhibits displacements of nanometers to microns at actuation voltages on the order of mV. Applying a voltage across an oxide film disposed on an ionically conducting substrate pumps oxygen ions into the oxide film, which in turn causes the oxide film to expand. This expansion can be controlled by varying the voltage based on the open-circuit potential across the oxide film and the substrate. Thanks to their low actuation voltages and ability to work at high temperatures, oxide-based actuators are suitable for applications from robotics to nuclear reactors.

Abstract: This invention provides an electromechanical device comprising an active material comprising a metal oxide such as Ce0.8Gd0.2O1.9 wherein the elastic modulus of metal oxide can be modulated by applying external electric field. The Ce0.8Gd0.2O1.9 layer in a substrate\electrode\Ce0.8Gd0.2O1.9\electrode structure or conductive substrate\Ce0.8Gd0.2O1.9\electrode structure develops a stress upon applying an electric field. This invention provides methods for tailoring the elastic modulus of materials using an electric field for the generation of an electromechanical response.

Abstract: This invention provides an electromechanical device comprising an active material comprising a metal oxide such as Ce0.8Gd0.2O1.9 wherein the elastic modulus of metal oxide can be modulated by applying external electric field. The Ce0.8Gd0.2O1.9 layer in a substrate\electrode\Ce0.8Gd0.2O1.9\electrode structure or conductive substrate\Ce0.8Gd0.2O1.9\electrode structure develops a stress upon applying an electric field. This invention provides methods for tailoring the elastic modulus of materials using an electric field for the generation of an electromechanical response.

Abstract: Disclosed herein are fibers made from intrinsically conductive polymers, such as polyaniline, that are useful as chemiresistive gas sensors. The experimental results, based on both sensitivity and response time, show that doped PAni fibers are excellent ammonia sensors. and undoped PAni fibers are excellent nitrogen dioxide sensors.

Abstract: Gas sensor. The sensor is a single crystalline SnO disk and circuitry for measuring electrical resistance of the disk is provided. A change in resistance in the disk indicates adsorption of a gas on the disk's surface. The sensor is particularly adapted for detecting NO2 with high sensitivity and selectivity.

Abstract: A transfer layer includes a transparent substrate. A buffer layer is formed on the transparent substrate that comprises PbO, GaN, PbTiO3, La0.5Sr0.5CoO3 (LSCO), or LaxPb1-xCoO3 (LPCO) so that separation between the buffer layer and the transparent substrate occurs at substantially high temperatures.

Abstract: Radiation detector. The detector includes an ionic junction having an ionically bonded wide band gap material having a first region dominated by positively charged ionic defects in intimate contact with a second region dominated by negatively charged ionic defects forming depleted regions on both sides of the junction resulting in a built-in electric field. The detector also includes an ionic junction having a first ionically bonded wide band gap material dominated by positively charged ionic defects in intimate contact with a second ionically bonded wide band gap material dominated by negatively charged ionic defects forming depleted regions on both sides of the junction resulting in a built-in electric field. Circuit means are provided to establish a voltage across the junction so that radiation impinging upon the junction will cause a current to flow in the circuit.

Abstract: This invention provides an electromechanical device comprising an active material comprising a metal oxide such as Ce0.8Gd0.2O1.9 wherein the elastic modulus of metal oxide can be modulated by applying external electric field. The Ce0.8Gd0.2O1.9 layer in a substrate \ electrode \Ce0.8Gd0.2O1.9 \ electrode structure or conductive substrate \Ce0.8Gd0.2O1.9 \ electrode structure develops a stress upon applying an electric field. This invention provides methods for tailoring the elastic modulus of materials using an electric field for the generation of an electromechanical response.

Abstract: A transfer layer includes a transparent substrate. A buffer layer is formed on the transparent substrate that comprises PbO, GaN, PbTiO3, La0.5Sr0.5CoO3 (LSCO), or LaxPb1-xCoO3 (LPCO) so that separation between the buffer layer and the transparent substrate occurs at substantially high temperatures.

Abstract: A transfer layer includes a transparent substrate. A buffer layer is formed on the transparent substrate that comprises PbO, GaN, PbTiO3, La0.5Sr0.5CoO3 (LSCO), or LaxPb1-xCoO3 (LPCO) so that separation between the buffer layer and the transparent substrate occurs at substantially high temperatures.

Abstract: Radiation detector. The detector includes an ionic junction having an ionically bonded wide band gap material having a first region dominated by positively charged ionic defects in intimate contact with a second region dominated by negatively charged ionic defects forming depleted regions on both sides of the junction resulting in a built-in electric field. The detector also includes an ionic junction having a first ionically bonded wide band gap material dominated by positively charged ionic defects in intimate contact with a second ionically bonded wide band gap material dominated by negatively charged ionic defects forming depleted regions on both sides of the junction resulting in a built-in electric field. Circuit means are provided to establish a voltage across the junction so that radiation impinging upon the junction will cause a current to flow in the circuit.

Abstract: A sensor array is provided including a plurality of fibers being woven to form 3-D periodic fiber structures. A selective number of the fibers include gaseous sensing materials to detect selective gases. A plurality of spacing elements provides adequate spacing between successively arranged nano-fibers. The nano-fibers and spacing elements are arranged to form a 3-D scaffolding structure for detecting specific or combinations of gaseous analytes.

Abstract: The present invention discloses a solid oxide fuel cell and method for fabricating solid oxide fuel cells using thin film processing techniques. The fuel cell comprises a cathode layer, an electrolyte layer, and an anode layer arranged in various configurations to optimize fuel cell performance.