Patents by Inventor Harry Levin
Harry Levin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11939311Abstract: Provided herein are surfactant compounds that can be used to aid in preparation of protein samples for analysis, for example by mass spectrometry.Type: GrantFiled: August 6, 2020Date of Patent: March 26, 2024Assignee: Promega CorporationInventors: Joel Walker, Sergei Saveliev, Zhiyang Zeng, Robert Kargbo, Hui Wang, Sergiy Levin, Valerie Ressler, Jun Zhang, Ce Shi, Harry Tetsuo Uyeda, Jean Osterman, Min Zhou, Prabin Rai, Wenhui Zhou
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Patent number: 5045398Abstract: A silicon carbide product by converting carbon preforms by utilizing a reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner.Type: GrantFiled: January 9, 1990Date of Patent: September 3, 1991Inventor: Harry Levin
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Patent number: 4900531Abstract: A process for converting in depth a carbon or graphite preform object to a silicon carbide object, silicon carbide/silicon object, silicon carbide/carbon-core object, or a silicon carbide/silicon/carbon-core object, by contacting it with silicon liquid and vapor over various lengths of contact time in a reaction chamber. In the process, a stream comprised of a silicon-containing precursor material in gaseous phase below the decomposition temperature of said gas and a coreactant, carrier or diluent gas such as hydrogen is passed through a hole within a high emissivity, thin, insulating septum into the reaction chamber above the melting point of silicon. The thin septum has one face below the decomposition temperature of the gas and an opposite face exposed to the reaction chamber. Thus, the precursor gas is decomposed directly to silicon in the reaction chamber. Any stream of decomposition gas and any unreacted precursor gas from the reaction chamber is removed.Type: GrantFiled: February 8, 1988Date of Patent: February 13, 1990Inventor: Harry Levin
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Patent number: 4871587Abstract: A process for coating a carbon or graphite object with silicon carbide by contacting it with silicon liquid and vapor over various lengths of contact time. In the process, a stream of silicon-containing precursor material in gaseous phase below the decomposition temperature of said gas and a co-reactant, carrier or diluent gas such as hydrogen is passed through a hole within a high emissivity, thin, insulating septum into a reaction chamber above the melting point of silicon. The thin septum has one face below the decomposition temperature of the gas and an opposite face exposed to the reaction chamber. The precursor gas is decomposed directly to silicon in the reaction chamber. A stream of any decomposition gas and any unreacted precursor gas from said reaction chamber is removed. The object within the reaction chamber is then contacted with silicon, and recovered after it has been coated with silicon carbide.Type: GrantFiled: August 8, 1988Date of Patent: October 3, 1989Inventor: Harry Levin
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Patent number: 4751067Abstract: A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner.Type: GrantFiled: November 18, 1986Date of Patent: June 14, 1988Inventor: Harry Levin
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Patent number: 4737348Abstract: A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner.Type: GrantFiled: June 8, 1984Date of Patent: April 12, 1988Inventor: Harry Levin
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Patent number: 4668493Abstract: A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner.Type: GrantFiled: June 28, 1985Date of Patent: May 26, 1987Inventor: Harry Levin
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Patent number: 4444811Abstract: A process and apparatus for thermally decomposing silicon containing gas for deposition on fluidized nucleating silicon seed particles is disclosed.Silicon seed particles are produced in a secondary fluidized reactor by thermal decomposition of a silicon containing gas. The thermally produced silicon seed particles are then introduced into a primary fluidized bed reactor to form a fludized bed. Silicon containing gas is introduced into the primary reactor where it is thermally decomposed and deposited on the fluidized silicon seed particles. Silicon seed particles having the desired amount of thermally decomposed silicon product thereon are removed from the primary fluidized reactor as ultra pure silicon product.An apparatus for carrying out this process is also disclosed.Type: GrantFiled: December 3, 1981Date of Patent: April 24, 1984Assignee: California Institute of TechnologyInventors: George Hsu, Harry Levin, Richard A. Hogle, Ananda Praturi, Ralph Lutwack
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Patent number: 4343772Abstract: A thermal reactor apparatus and method of pyrolyticaly decomposing silane gas into liquid silicon product and hydrogen by-product gas is disclosed. The thermal reactor (1) has a reaction chamber (21) which is heated well above the decomposition temperature of silane. An injecter probe (100) introduces the silane gas tangentially into the reaction chamber (21) to form a first, outer, forwardly moving vortex (22) containing the liquid silicon product and a second, inner, rearwardly moving vortex (23) containing the by-product hydrogen gas. The liquid silicon in the first outer vortex (22) deposits onto the interior walls (28) of the reaction chamber (21) to form an equilibrium skull layer (26) which flows to the forward or bottom end of the reaction chamber where it is removed. The by-product hydrogen gas in the second inner vortex (23) is removed from the top or rear of the reaction chamber by a vortex finder (30).Type: GrantFiled: February 29, 1980Date of Patent: August 10, 1982Inventors: Robert A. Administrator of the National Aeronautics and Space Administation, with respect to an invention of Frosch, Harry Levin, Larry B. Ford
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Patent number: 4314525Abstract: A process and apparatus for thermally decomposing silicon containing gas for deposition on fluidized nucleating silicon seed particles is disclosed.Silicon seed particles are produced in a secondary fluidized reactor by thermal decomposition of a silicon containing gas. The thermally produced silicon seed particles are then introduced into a primary fluidized bed reactor to form a fluidized bed. Silicon containing gas is introduced into the primary reactor where it is thermally decomposed and deposited on the fluidized silicon seed particles. Silicon seed particles having the desired amount of thermally decomposed silicon product thereon are removed from the primary fluidized reactor as ultra pure silicon product.An apparatus for carrying out this process is also disclosed.Type: GrantFiled: March 3, 1980Date of Patent: February 9, 1982Assignee: California Institute of TechnologyInventors: George C. Hsu, Harry Levin, Richard A. Hogle, Ananda Praturi, Ralph Lutwack
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Patent number: 4123498Abstract: A process for the separation and collection of molybdenum-99 from an irradiated uranium-containing target material utilizes thermal chromatographic separation. The irradiated target material containing the molybdenum-99 is heated in an oxidizing atmosphere to form an oxidized target material and gaseous molybdenum-99 trioxide. The gaseous molybdenum-99 trioxide is carried by the oxidizing atmosphere along with other vaporized materials to a cooling zone for progressive condensation and collection of the molybdenum-99 trioxide and the other materials in the form of separate deposits.Type: GrantFiled: February 17, 1977Date of Patent: October 31, 1978Assignee: General Electric CompanyInventors: Herman S. Rosenbaum, Douglas R. Packard, Harry A. Levin