Abstract: A method of making a liquid crystal display which has a layer of polysilicon on a surface of a substrate, a gate of a conductive material over and insulated from a portion of the polysilicon layer, a layer of an insulating material over the gate, and a metal layer on the insulating layer. The method includes forming a layer of an insulating material over the metal layer and then subjecting the device to a plasma containing hydrogen to diffuse the hydrogen through the insulating layers and the metal layer into the polysilicon layer.

Abstract: A cermet film includes metal particles in an insulator with the metal particles having an average diameter of from about 30A to about 120A. The cermet film has a high resistivity, and low temperature coefficient of resistivity, and is stable under electric fields of up to 10.sup.5 volts/cm. The cermet film can be formed by co-sputtering the metal and the insulator onto a substrate. The sputtered cermet film is then annealed in a reducing atmosphere whereby its resistivity is increased without a corresponding change in its temperature coefficient of resistivity.

Abstract: A method for depositing a layer in which the concentration of constituent materials varies through its thickness employs a radio frequency sputtering apparatus. The deposition apparatus has a target composed of different component materials for the layer. The substrate is placed within the deposition apparatus and moved to various positions with respect to the target during the deposition.

Abstract: One end of a support structure of dielectric material tapers to a tip which has a curved bottom surface. A cermet film composed of a conductive material and a dielectric material which adheres well to the support structure is on a portion of the support structure's surface. The concentration of the constituent materials in the cermet film varies through its thickness. The cermet film at the interface with the support structure has a high concentration of dielectric material while the portion of cermet film at its exposed surface has a high conductive material concentration.

Abstract: A cermet film includes metal particles in an insulator with the metal particles having an average diameter of from about 30A to about 120A. The cermet film has a high resistivity, and low temperature coefficient of resistivity, and is stable under electric fields of up to 10.sup.5 volts/cm. The cermet film can be formed by co-sputtering the metal and the insulator onto a substrate. The sputtered cermet film is then annealed in a reducing atmosphere whereby its resistivity is increased without a corresponding change in its temperature coefficient of resistivity.

Abstract: A metal oxide vapor, such as tungsten oxide, is reacted with a ceramic material, such as aluminum oxide, at a temperature in the range of from about 1300.degree.C to about 1400.degree.C. The metal oxide vapors diffuse into the ceramic material during the reaction. The ceramic material, which now includes tungsten oxide diffused therein, is then subjected to a reducing atmosphere so as to form a cermet region in the ceramic material.