Abstract: The present invention relates to a silicon powder, where the size of the silicon powder particles are between 3 and 30 ?m, a particle size fraction D10 of the silicon powder particles is between 3 and 9 ?m, and where the silicon powder particles have no, or substantially no, silicon particles with a size smaller than D10 attached to the surface. The silicon powder according to the present invention is produced by wet classifying produced silicon powders.

Abstract: The present invention relates to a silicon powder, where the size of the silicon powder particles are between 3 and 30 ?m, a particle size fraction D10 of the silicon powder particles is between 3 and 9 ?m, and where the silicon powder particles have no, or substantially no, silicon particles with a size smaller than D10 attached to the surface. The silicon powder according to the present invention is produced by wet classifying produced silicon powders.

Abstract: The present invention relates to a method for the production of trichlorosilane by reaction of silicon with HCI gas at a temperature between 250° and 1100° C., and an absolute pressure of 0.5-30 atm in a fluidized bed reactor, in a stirred bed reactor or a solid bed reactor, where the silicon supplied to the reactor contains between 40 and 10.000 ppm by weight barium and optionally 40-10000 ppm by weight copper The invention further relates to silicon for use in the production of trichlorosilane by reaction of silicon with HCI gas, containing between 40 and 10.000 ppm by weight barium and optionally 40-10000 ppm by weight copper, the remaining except for normal impurities being silicon.

Abstract: The present invention relates to a method for the production of trichlorosilane by reaction of silicon with HCl gas at a temperature between 250° and 1100° C., and an absolute pressure of 0.5-30 atm in a fluidized bed reactor, in a stirred bed reactor or a solid bed reactor, where the silicon supplied to the reactor contains between 40 and 10.000 ppm by weight barium and optionally 40-10000 ppm by weight copper The invention further relates to silicon for use in the production of trichlorosilane by reaction of silicon with HCl gas, containing between 40 and 10.000 ppm by weight barium and optionally 40-10000 ppm by weight copper, the remaining except for normal impurities being silicon.

Abstract: The present invention relates to a method for the production of trichlorosilane by reaction of silicon with HCl gas at a temperature between 250 and 1100° C., and an absolute pressure of 0.5-30 atm in a fluidized bed reactor, in a stirred bed reactor or a solid bed reactor, where the silicon supplied to the reactor contains between 30 and 10.000 ppm chromium. The invention further relates to silicon for use in the production of trichlorosilane by reaction of silicon with HCl gas, containing between 30 and 10.000 ppm 10 chromium, the remaining except for normal impurities being silicon.

Abstract: The present invention relates to a method for removing impurities from elemental silicon-containing residues from the processes of producing organochlorosilane and chlorosilane. The residues are subjected to magnetic seperation to provide a relative pure non-magnetic fraction having an increased silicon content and a relatively impure magnetic fraction having a lower silicon content than the non-magnetic fraction.

Abstract: The present invention relates to a method for production of alkylhalosilanes by reaction between elemental silicon and an alkylhalide at elevated temperatures in the presence of a copper-based catalyst and optionally promotors. Aluminium in the form of metallic aluminium, or an aluminium alloy, or an aluminium containing silicon alloy or an aluminium containing compound or mixtures thereof are added to the reactor in an amount between 0.01 and 1% by weight calculated as aluminium based on the weight of silicon supplied to the reactor.