Abstract: A lithographic apparatus has an alignment system including a radiation source configured to convert narrow-band radiation into continuous, flat and broad-band radiation. An acoustically tunable narrow pass-band filter filters the broad-band radiation into narrow-band linearly polarized radiation. The narrow-band radiation may be focused on alignment targets of a wafer so as to enable alignment of the wafer. In an embodiment, the filter is configured to modulate an intensity and wavelength of radiation produced by the radiation source and to have multiple simultaneous pass-bands. The radiation source generates radiation that has high spatial coherence and low temporal coherence.

Abstract: A lithographic apparatus has an alignment system including a radiation source configured to convert narrow-band radiation into continuous, flat and broad-band radiation. An acoustically tunable narrow pass-band filter filters the broad-band radiation into narrow-band linearly polarized radiation. The narrow-band radiation may be focused on alignment targets of a wafer so as to enable alignment of the wafer. In an embodiment, the filter is configured to modulate an intensity and wavelength of radiation produced by the radiation source and to have multiple simultaneous pass-bands. The radiation source generates radiation that has high spatial coherence and low temporal coherence.

Abstract: A system and method to allow organic fluids to be used in immersion lithographic systems. This is done by providing a showerhead portion of a liquid supply system that is partially coated or made from a TEFLON like material. The TEFLON like material reduces wetness effect, and thus increases containment, when using an organic immersion fluid in a space between the last optic and the substrate.

Abstract: A system is disclosed to isolate an environmental chamber of an immersion lithographic apparatus, to which an immersion fluid comprising liquid, is provided from an external environment. Further, there is disclosed a system for measuring flow rate and/or vapor concentration of a gas using a transducer to send and/or receive an acoustic signal.

Abstract: A method is described for alignment of a substrate during a double patterning process. A first resist layer containing at least one alignment mark is formed on the substrate. After the first resist layer is developed, a second resist layer is deposited over the first resist layer, leaving a planar top surface (i.e., without topography). By baking the second resist layer appropriately, a symmetric alignment mark is formed in the second resist layer with little or no offset error from the alignment mark in the first resist layer. The symmetry of the alignment mark formed in the second resist can be enhanced by appropriate adjustments of the respective thicknesses of the first and second resist layers, the coating process parameters, and the baking process parameters.

Abstract: A multiple patterning process employs a phase change material, portions of which can be converted to an amorphous state and then a remaining portion is selectively removed to provide high resolution pattern features with a feature spacing smaller than, for example, a minimum spacing available in a conventional patterning layer employing a single exposure. A lithographic apparatus for use in the process may comprise an exposure tool having a single illuminator and single patterning device that is imaged through a single exposure slit onto a scanning substrate. Alternatively, the exposure tool may have multiple illuminators and/or multiple scanning complementary patterning devices optionally used with multiple exposure slits on the scanning substrate to facilitate double patterning in a single substrate pass.

Abstract: A method is described for alignment of a substrate during a double patterning process. A first resist layer containing at least one alignment mark is formed on the substrate. After the first resist layer is developed, a second resist layer is deposited over the first resist layer, leaving a planar top surface (i.e., without topography). By baking the second resist layer appropriately, a symmetric alignment mark is formed in the second resist layer with little or no offset error from the alignment mark in the first resist layer. The symmetry of the alignment mark formed in the second resist can be enhanced by appropriate adjustments of the respective thicknesses of the first and second resist layers, the coating process parameters, and the baking process parameters.

Abstract: A liquid immersion lithography system includes projection optics (PL) and a showerhead (604). The projection optics are configured to expose a substrate (W) with a patterned beam. The showerhead includes a first nozzle (610) and a second nozzle (612) that are configured to be at different distances from a surface of the substrate during an exposure operation.

Abstract: A mask inspection system with Fourier filtering and image compare can include a first detector, a dynamic Fourier filter, a controller, and a second detector. The first detector can be located at a Fourier plane of the inspection system and can detect a first portion of patterned light produced by an area of a mask. The dynamic Fourier filter can be controlled by the controller based on the detected first portion of the patterned light. The second detector can detect a second portion of the patterned light produced by the section of the mask and transmitted through the dynamic Fourier filter. Further, the mask inspection system can include a data analysis device to compare the second portion of patterned light with another patterned light. Consequently, the mask inspection system is able to detect any possible defects on the area of the mask more accurately and with higher resolution.

Abstract: A system for tuning the refractive index of immersion liquid in an immersion lithographic apparatus is disclosed. Two or more immersion liquids of different refractive index are mixed together in order to achieve a desired refractive index. Further, the fluids may be conditioned and treated to maintain optical characteristics.

Abstract: A lithographic apparatus comprises an immersion fluid system and an interferometric temperature detection system. The immersion fluid system is configured to provide immersion fluid to an exposure system. The interferometric temperature detection system is configured to measure a temperature of the immersion fluid.

Abstract: A system and method are utilized to equalize intensity or energy in various diffraction order portions of a patterned beam. The patterned beam is formed using a diffractive patterning device. An attenuator is placed at a pupil of a projection system to attenuate respective diffraction order portions of the patterned beam. The projection device is also used to project the patterned beam onto a target portion of a substrate, after the respective attenuations.

Abstract: Immersion lithography aberration control systems and methods that compensate for a heating effect of exposure energy in an immersion fluid across an exposure zone are provided. An aberration control system includes actuators that adjust optical elements within the immersion lithography system and a fluid heating compensation module coupled to the actuators. The fluid heating adjustment module determines actuator commands to make aberration adjustments to optical elements within the immersion lithography system based on changes in one or more of a flow rate of the immersion liquid, an exposure dose and a reticle pattern image. In an embodiment, the aberration control system includes an interferometric sensor that pre-calibrates aberrations based on changes in operating characteristics related to the immersion fluid. Methods are provided that calibrate aberrations, determine actuator adjustments and implement actuator adjustments upon changes in operating characteristics to control aberration effects.

Abstract: A system for tuning the refractive index of immersion liquid in an immersion lithographic apparatus is disclosed. Two or more immersion liquids of different refractive index are mixed together in order to achieve a desired refractive index. Further, the fluids may be conditioned and treated to maintain optical characteristics.

Abstract: Immersion lithography aberration control systems and methods that compensate for a heating effect of exposure energy in an immersion fluid across an exposure zone are provided. An aberration control system includes actuators that adjust optical elements within the immersion lithography system and a fluid heating compensation module coupled to the actuators. The fluid heating adjustment module determines actuator commands to make aberration adjustments to optical elements within the immersion lithography system based on changes in one or more of a flow rate of the immersion liquid, an exposure dose and a reticle pattern image. In an embodiment, the aberration control system includes an interferometric sensor that pre-calibrates aberrations based on changes in operating characteristics related to the immersion fluid. Methods are provided that calibrate aberrations, determine actuator adjustments and implement actuator adjustments upon changes in operating characteristics to control aberration effects.

Abstract: A liquid immersion photolithography system includes an exposure system that exposes a substrate with electromagnetic radiation, and also includes an optical system that images the electromagnetic radiation on the substrate. A liquid is between the optical system and the substrate. The projection optical system is positioned below the substrate.

Abstract: A lithographic apparatus has an alignment system including a radiation source configured to convert narrow-band radiation into continuous, flat and broad-band radiation. An acoustically tunable narrow pass-band filter filters the broad-band radiation into narrow-band linearly polarized radiation. The narrow-band radiation may be focused on alignment targets of a wafer so as to enable alignment of the wafer. In an embodiment, the filter is configured to modulate an intensity and wavelength of radiation produced by the radiation source and to have multiple simultaneous pass-bands. The radiation source generates radiation that has high spatial coherence and low temporal coherence.

Abstract: A semiconductor wafer is aligned using a double patterning process. A first resist layer having a first optical characteristic is deposited and foams at least one alignment mark. The first resist layer is developed. A second resist layer having a second optical characteristic is deposited over the first resist layer. The combination of first and second resist layers and alignment mark has a characteristic such that radiation of a pre-determined wavelength incident on the alignment mark produces a first or higher order diffraction as a function of the first and second optical characteristics.

Abstract: A method of forming features, e.g. contact holes, at a higher density than is possible with conventional lithographic techniques involves forming an array of sacrificial positive features, conformally depositing a sacrificial layer so that negative features are formed interleaved with the positive features, directionally etching the sacrificial layer and removing the sacrificial features. The result is an array of holes at a higher density than the original sacrificial features. These may then be transferred into the underlying substrate using a desired process. Also, the method may be repeated to create arrays at even higher densities.

Abstract: A liquid immersion photolithography system includes an exposure system that exposes a substrate with electromagnetic radiation, and also includes an optical system that images the electromagnetic radiation on the substrate. A liquid is between the optical system and the substrate. The projection optical system is positioned below the substrate.