Abstract: Fuel cell structure. A plurality of microtubes are electrically inter-connected. Each microtube includes an anode and a cathode layer separated by an electrolyte layer. The plurality of microtubes are arranged in at least two adjacent layers with microtubes in a first layer extending in a first direction and the microtubes in the second layer extending in a second direction, the first and second directions being non-parallel.

Abstract: Fuel cell structure. A plurality of microtubes are electrically inter-connected. Each microtube includes an anode and a cathode layer separated by an electrolyte layer. The plurality of microtubes are arranged in at least two adjacent layers with microtubes in a first layer extending in a first direction and the microtubes in the second layer extending in a second direction, the first and second directions being non-parallel.

Abstract: A selective gas sensor comprises a semiconducting substrate, a radiation source that directs narrowband radiation to the semiconducting substrate; and a plurality of electrodes coupled to the semiconducting substrate, whereby a gas is selectively sensed. A method of selectively sensing a gas comprises the steps of contacting the semiconducting substrate with a gas, directing narrowband radiation to the semiconducting substrate and sensing the resistance of the semiconducting substrate, thereby selectively sensing the gas.

Abstract: A method for fabricating an ultra-sensitive metal oxide gas sensor is disclosed, which comprises the steps of spinning a mixture solution including a metal oxide precursor and a polymer onto a sensor electrode to form a metal oxide precursor-polymer composite fiber; thermally compressing or thermally pressurizing the composite fiber; and thermally treating the thermally compressed or thermally pressurized composite fiber to remove the polymer from the composite fiber. Since the gas sensor includes a macro pore between nanofibers and a meso pore between nano-rods and/or nano-grains, gas diffusion and surface area can be maximized. Also, the ultra-sensitive sensor having high stability in view of mechanical, thermal, and electrical aspects can be obtained through rapid increase of adhesion between the metal oxide thin layer and the sensor electrode.

Abstract: The invention relates to a method and a device for detecting the environmental influence on a sensor by means of a variation of an electrical conductivity of a layer of the sensor, a device for detecting the environmental influence on sensors by detecting a variation of the electrical conductivity of a layer of the sensors, and a sensor device for detecting the environmental influence by means of a variation of an electrical conductivity of a layer of the sensor and by detecting a deposition inside the volume or on the surface thereof and/or the interaction of an environmental material or a substance to be measured on the same sensor.

Abstract: The present invention discloses a solid oxide fuel cell and method for fabricating solid oxide fuel cells using thin film processing techniques. The fuel cell comprises a cathode layer, an electrolyte layer, and an anode layer arranged in various configurations to optimize fuel cell performance.

Abstract: A thin film transistor (TFT) includes a source electrode, a drain electrode, and a gate electrode. A gate insulator is coupled to the source electrode, drain electrode, and gate electrode. The gate insulator includes room temperature deposited high-K materials so as to allow said thin film transistor to operate at low operating voltage.

Abstract: A transparent thin film transistor device includes a transparent substrate, and a high dielectric constant insulator layer disposed over the transparent substrate at a defined temperature. A transparent semiconductor layer is disposed over the insulator layer.

Abstract: A transistor device includes a transparent substrate. A high K dielectric is formed on the transparent substrate and transferred onto a flexible substrate. An organic transistor is formed on the high K dielectric.

Abstract: A tunable microwave device includes a SOI structure. A buffer layer is formed on the SOI structure. A microwave film layer is formed on the buffer layer. The microwave film layer comprises BST related materials.

Abstract: A transfer layer includes a transparent substrate. A buffer layer is formed on the transparent substrate that comprises PbO, GaN, PbTiO3, La0.5Sr0.5CoO3 (LSCO), or LaxPb1-xCoO3 (LPCO) so that separation between the buffer layer and the transparent substrate occurs at substantially high temperatures.

Abstract: A BST microwave device includes a substrate and an insulating layer that is formed on the substrate. A buffer layer is formed on the insulating layer. A BST layer is formed on the buffer layer with a selected orientation for high tunability and possesses a low loss in a wavelength of interest.

Abstract: A BST microwave device includes a single crystal oxide wafer. A silicon dioxide layer is formed on the single crystal oxide layer. A silicon substrate is bonded on the silicon dioxide layer. A BST layer is formed on the single crystal oxide layer.

Abstract: A MEMS device includes a first material structure. A second material structure includes TiN. The second material structure is moveable relative to the first material structure.

Abstract: A selective gas sensor comprises a semiconducting substrate, a radiation source that directs narrowband radiation to the semiconducting substrate; and a plurality of electrodes coupled to the semiconducting substrate, whereby a gas is selectively sensed. A method of selectively sensing a gas comprises the steps of contacting the semiconducting substrate with a gas, directing narrowband radiation to the semiconducting substrate and sensing the resistance of the semiconducting substrate, thereby selectively sensing the gas.

Abstract: A method of sensing the amount of a gas in a fluid flow includes operating an acoustic wave (AW) sensor at a first resonant frequency. The AW sensor includes a high temperature stable piezoelectric plate coupled to a first gas-absorbing layer. Also included is combining a fluid flow having a gas component with the first gas-absorbing layer at a temperature of at least about 500° C. At least one resonant frequency of the AW sensor is sensed. The amount of gas in the fluid flow is sensed by correlating the resonant frequency with the amount of gas absorbed in the first gas-absorbing layer. A sensor for sensing the amount of a gas in a fluid flow includes a first gas-absorbing layer, a high-temperature-stable piezoelectric plate coupled to the first gas-absorbing layer, and a controller coupled to the high-temperature-stable piezoelectric plate.