Abstract: A sputtering plasma reactors for plasma vapor deposition (PVD) having an improved interface between a PVD target, a ceramic ring and a PVD chamber wall. The reactor includes a PVD chamber wall and a PVD target, wherein the target in conjunction with the PVD chamber wall form a vacuum chamber and wherein at least the portion of the target facing the vacuum chamber is composed of material to be sputtered. The reactor also includes an insulating ceramic ring positioned between the target and the PVD chamber wall. A first O-ring is provided to establish a vacuum seal between the target and the insulating ring and a second O-ring is provided to establish a vacuum seal between the insulating ring and the PVD chamber wall. At least one spacer is positioned between the target and insulating ring to maintain a gap G between the insulating ring and the target.

Abstract: A sputtering plasma reactors for plasma vapor deposition (PVD) having an improved interface between a PVD target, a ceramic ring and a PVD chamber wall. The reactor includes a PVD chamber wall and a PVD target, wherein the target in conjunction with the PVD chamber wall form a vacuum chamber and wherein at least the portion of the target facing the vacuum chamber is composed of material to be sputtered. The reactor also includes an insulating ceramic ring positioned between the target and the PVD chamber wall. A first O-ring is provided to establish a vacuum seal between the target and the insulating ring and a second O-ring is provided to establish a vacuum seal between the insulating ring and the PVD chamber wall. At least one spacer is positioned between the target and insulating ring to maintain a gap G between the insulating ring and the target.

Abstract: A sputtering plasma reactors for plasma vapor deposition (PVD) having an improved interface between a PVD target, a ceramic ring and a PVD chamber wall. The reactor includes a PVD chamber wall and a PVD target, wherein the target in conjunction with the PVD chamber wall form a vacuum chamber and wherein at least the portion of the target facing the vacuum chamber is composed of material to be sputtered. The reactor also includes an insulating ceramic ring positioned between the target and the PVD chamber wall. A first O-ring is provided to establish a vacuum seal between the target and the insulating ring and a second O-ring is provided to establish a vacuum seal between the insulating ring and the PVD chamber wall. At least one spacer is positioned between the target and insulating ring to maintain a gap G between the insulating ring and the target.

Abstract: The present application pertains to unconventional sputter target/backing plate assemblies (10) for high power operation and to the low temperature method of making them. The sputter target/backing plate assemblies (10) comprise targets (12) and backing plates (16) having dissimilar thermal coefficients of expansion. Although the consolidated targets (12) and backing plates (16) have dissimilar thermal coefficients of expansion, they are able to be bonded together and used at high sputtering temperatures without bowing or bending and are able to utilize backing plates (16) normally associated with a specified target metal. In the method of making, a plurality of male projections (16) are formed in one member of the assembly (10) with a plurality of corresponding female grooves (32) formed in the other surface. The assembly (10) is bonded by conventional techniques around an annular zone that surrounds the male (26) and female portions (32).

Abstract: A low temperature target and backing plate bonding process and assemblies made thereby. A plurality of projections are formed in the harder member of the assembly. The assembly is bonded by conventional techniques around the peripheral assembly boundaries. The assembly is then pressure consolidated at low temperature so that the projections, circumscribed by the bonded zone, penetrate into the softer member promoting the formation of metal to metal cold diffusion type bonds.

Abstract: A low temperature target and backing plate bonding process and assemblies made thereby. A plurality of male projections (8) are formed in one member (2) of the assembly with a plurality of corresponding female recesses (9) formed in the other member (4). The assembly is bonded by conventional techniques around the peripheral boundary (25) that surrounds the male and female portions (8,9). The assembly is then pressure consolidated at low temperature so that the projections (8), circumscribed by the bonded zone, are force fit into the female recesses (9).

Abstract: A cathode sputtering assembly includes a sputter target welded to a corresponding backing member, where the target and backing member are adapted for insertion into a sputtering system. The target has a reduced diameter portion profiled for receipt within a counterbored upper section of the backing member. The target has a beveled surface above the reduced diameter section, and the backing member has an upper tapered edge, where the interface between the sputtering target and the backing member cooperate to define a V-groove. Both the target and the backing member are comprised of aluminum and the target and backing member are TIG welded together with aluminum filler rod.