Patents by Inventor Harsh N. Patel

Harsh N. Patel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10811069
    Abstract: Structures for a non-volatile memory and methods for forming and using such structures. The structure includes a bitcell having a non-volatile memory element and a transmission gate. The transmission gate includes an n-type field-effect transistor and a p-type field effect transistor. The n-type field-effect transistor has a first drain region, a first source region, and a first gate electrode. The p-type field-effect transistor has a second drain region, a second source region coupled in parallel with the first source region, and a second gate electrode. The first drain region of the n-type field-effect transistor and the second drain region of the p-type field-effect transistor are coupled in parallel with the non-volatile memory element.
    Type: Grant
    Filed: January 15, 2019
    Date of Patent: October 20, 2020
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Harsh N. Patel, Bipul C. Paul
  • Publication number: 20200227107
    Abstract: Structures for a non-volatile memory and methods for forming and using such structures. The structure includes a bitcell having a non-volatile memory element and a transmission gate. The transmission gate includes an n-type field-effect transistor and a p-type field effect transistor. The n-type field-effect transistor has a first drain region, a first source region, and a first gate electrode. The p-type field-effect transistor has a second drain region, a second source region coupled in parallel with the first source region, and a second gate electrode. The first drain region of the n-type field-effect transistor and the second drain region of the p-type field-effect transistor are coupled in parallel with the non-volatile memory element.
    Type: Application
    Filed: January 15, 2019
    Publication date: July 16, 2020
    Inventors: Harsh N. Patel, Bipul C. Paul
  • Patent number: 10586581
    Abstract: Structures for a non-volatile memory and methods for forming and using such structures. A bitcell of the non-volatile memory includes a nonvolatile memory element and a field-effect transistor having a drain region coupled with the nonvolatile memory element, a source region, and a gate electrode. A word line is coupled with the gate electrode of the field-effect transistor, a bit line is coupled with the nonvolatile memory element, and a source line is coupled with the source region of the field-effect transistor. A power supply is configured to supply a negative bias voltage to the bit line in order to provide a first state for writing data to the nonvolatile memory element or to supply the negative bias voltage to the source line in order to provide a second state for writing data to the nonvolatile memory element.
    Type: Grant
    Filed: November 30, 2018
    Date of Patent: March 10, 2020
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Harsh N. Patel, Bipul C. Paul, Joseph Versaggi