Abstract: The power thyristor of this invention has a cellular emitter structure. Each cell also has a FET assisted turn-on gate integrated into the cell. A turn-on gate voltage of one polarity is applied to a FET gate element that overlies the surface of the cell and to the turn-on gate integrated into the cell. When this voltage is so applied, a channel underlying the FET gate element becomes conductive, which allows the integrated turn-on gate to provide drive to the upper base-upper emitter junction of the thyristor cell thereby turning the thyristor cell on.

Abstract: An advanced solar cell having an improved efficiency over known conventional solar cells uses an external electric field to enhance the conversion of solar energy into electrical energy. The advanced solar cell has a layered extrinsic semiconductor with a lightly doped base layer sandwiched between two oppositely and heavily doped layers to form a P-N junction within the semiconductor. The base layer has opposing incident and collection surfaces, at least one of which has recessed contact regions interspersed between biasing regions. At least one of the heavily doped layers is substantially confined within the recessed contact regions. Overlaying the biasing region is an enhancement layer, such as a layered MOS structure. Biasing the enhancement layer provides an externally generated electric field to the semiconductor which enhances a depletion region formed around the P-N junction when photon radiation impinges on the semiconductor.