Abstract: The invention relates to a mask for imaging a pattern on a photoresist layer, with at least one alignment mark, to a method of making such a mask, and use of these masks for making semiconductor components.The masks made in accordance with the invention are obtained in such manner that in their production the patterns of adjacent chip fields are imaged to the effect that they overlap in their border lines containing the alignment marks. The process produces alignment marks representing the mean of at least two alignment marks of adjacent chip fields.By means of the above specified manufacturing process, the opto-mechanical imaging defects observed during mask production can be substantially eliminated. The masks as disclosed by the invention can be aligned in semiconductor processes with more precision than prior art masks.

Abstract: A negative exposure mask is prepared by forming a positive mask image of a first metal layer on a transparent substrate and applying a layer of resist which is exposed through the back of the substrate and developed to form a lift-off mask. The lift-off mask is used to form a negative mask image of a second layer of metal on the substrate in the areas not covered by the first metal layer. The first metal layer is then etched away to leave the negative mask image on the substrate.